BZV55B2V4 - BZV55B75
Taiwan Semiconductor
500mW, 2% Tolerance Zener Diodes
FEATURES
KEY PARAMETERS
● Wide zener voltage range selection: 2.4V to 75V
● VZ tolerance selection of ± 2%
● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
PARAMETER
VALUE
UNIT
VZ
2.4-75
V
Test current IZT
5
mA
PD
500
mW
VF at IF=100mA
1
V
TJ Max.
175
°C
APPLICATIONS
●
●
●
●
Low voltage stabilizers or voltage references
Adapters
Lighting application
On-board DC/DC converter
Package
Mini-MELF
Configuration
Single die
MECHANICAL DATA
●
●
●
●
Case: Mini-MELF
Terminal: Matte tin plated leads, solderable per J-STD-002
Polarity: Indicated by cathode band
Weight: 0.03g (approximately)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
Forward voltage @ IF=100mA
SYMBOL
VALUE
UNIT
VF
1
V
Power dissipation
PD
500
mW
Junction temperature range
TJ
-65 to +175
°C
Storage temperature range
TSTG
-65 to +175
°C
SYMBOL
TYP
UNIT
RӨJA
300
°C/W
THERMAL PERFORMANCE
PARAMETER
Junction-to-ambient thermal resistance
1
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
ZENER VOLTAGE
PART NUMBER
TEST
REGULAR
TEST
CURRENT
IMPEDANCE
CURRENT
VZ @ IZT
IZT
ZZT @ IZT
ZZK @ IZK
IZK
V
mA
Ω
Ω
mA
LEAKAGE CURRENT
IR @ V R
µA
V
Min.
Nom.
Max.
Max.
Max.
BZV55B2V4
2.35
2.4
2.45
5
85
600
1.0
50
1.0
BZV55B2V7
2.65
2.7
2.75
5
85
600
1.0
10
1.0
BZV55B3V0
2.94
3.0
3.06
5
85
600
1.0
4
1.0
BZV55B3V3
3.23
3.3
3.37
5
85
600
1.0
2
1.0
BZV55B3V6
3.53
3.6
3.67
5
85
600
1.0
2
1.0
BZV55B3V9
3.82
3.9
3.98
5
85
600
1.0
2
1.0
BZV55B4V3
4.21
4.3
4.39
5
75
600
1.0
1
1.0
BZV55B4V7
4.61
4.7
4.79
5
60
600
1.0
0.5
1.0
BZV55B5V1
5.00
5.1
5.20
5
35
550
1.0
0.1
1.0
BZV55B5V6
5.49
5.6
5.71
5
25
450
1.0
0.1
1.0
BZV55B6V2
6.08
6.2
6.32
5
10
200
1.0
0.1
2.0
BZV55B6V8
6.66
6.8
6.94
5
8
150
1.0
0.1
3.0
BZV55B7V5
7.35
7.5
7.65
5
7
50
1.0
0.1
5.0
BZV55B8V2
8.04
8.2
8.36
5
7
50
1.0
0.1
6.2
BZV55B9V1
8.92
9.1
9.28
5
10
50
1.0
0.1
6.8
BZV55B10
9.80
10
10.20
5
15
70
1.0
0.1
7.5
BZV55B11
10.78
11
11.22
5
20
70
1.0
0.1
8.2
BZV55B12
11.76
12
12.24
5
20
90
1.0
0.1
9.1
BZV55B13
12.74
13
13.26
5
26
110
1.0
0.1
10
BZV55B15
14.70
15
15.30
5
30
110
1.0
0.1
11
BZV55B16
15.68
16
16.32
5
40
170
1.0
0.1
12
BZV55B18
17.64
18
18.36
5
50
170
1.0
0.1
13
BZV55B20
19.60
20
20.40
5
55
220
1.0
0.1
15
BZV55B22
21.56
22
22.44
5
55
220
1.0
0.1
16
BZV55B24
23.52
24
24.48
5
80
220
1.0
0.1
18
BZV55B27
26.46
27
27.54
5
80
220
1.0
0.1
20
BZV55B30
29.40
30
30.60
5
80
220
1.0
0.1
22
BZV55B33
32.34
33
33.66
5
80
220
1.0
0.1
24
BZV55B36
35.28
36
36.72
5
80
220
1.0
0.1
27
BZV55B39
38.22
39
39.78
2.5
90
500
0.5
0.1
28
BZV55B43
42.14
43
43.86
2.5
90
600
0.5
0.1
32
BZV55B47
46.06
47
47.94
2.5
110
700
0.5
0.1
35
BZV55B51
49.98
51
52.02
2.5
125
700
0.5
0.1
38
BZV55B56
54.88
56
57.12
2.5
135
1000
0.5
0.1
42
BZV55B62
60.76
62
63.24
2.5
150
1000
0.5
0.1
47
BZV55B68
66.64
68
69.36
2.5
160
1000
0.5
0.1
51
BZV55B75
73.50
75
76.50
2.5
170
1000
0.5
0.1
56
2
Max.
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
Notes:
1. The zener voltage (VZ) is tested under pulse condition of 30ms.
2. The device numbers listed have a standard tolerance on the nomial zener voltage of ±2%.
3. For detailed information on price, availability and delivery of nominal zener voltages between the voltages
shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative.
4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current
having an RMS value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK.
ORDERING INFORMATION
PART NO.
(Note 1)
PACKAGE
PACKING
BZV55Bxxx L0
MINI MELF
10K / 13" Reel
BZV55Bxxx L0G
MINI MELF
10K / 13" Reel
BZV55Bxxx L1
MINI MELF
2.5K / 7" Reel
BZV55Bxxx L1G
MINI MELF
2.5K / 7" Reel
Notes:
1. "xxx" defines voltage from 2.4V (BZV55B2V4) to 75V (BZV55B75)
3
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig. 1 Power Dissipation VS. Ambient
Fig. 2 Total Capacitance
Temperature
1000
Total Capacitance (pF)
PD-Power DIssipation (mW)
600
500
400
300
200
f=1MHz
TA=25oC
VR=0
100
VR=2V
VR=5V
10
VR=20V
100
VR=25V
1
0
0
40
80
120
160
0
200
20
40
60
80
Temperature ( C)
VZ - Reverse Voltage (V)
Fig. 3 Differential Impedance VS. Zener
Fig. 4 Forward Current VS. Forward Voltage
o
Voltage
1000
TA=25oC
IZ=1mA
IZ=2mA
IZ=5mA
100
Forward Current (mA)
Differential Zener Impedance(Ohm)
1000
IZ=10mA
10
100
10
1
1
0
0.1
1
10
0.0
100
0.2
0.4
0.6
0.8
1.0
1.2
VF - Forward Voltage (mV)
VZ - Reverse Voltage (V)
4
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSION
Mini-MELF
Unit (mm)
DIM.
C
Unit (inch)
Min
Max
Min
Max
A
3.30
3.70
0.130
0.146
B
1.40
1.60
0.055
0.063
C
0.20
0.50
0.008
0.020
B
A
SUGGEST PAD LAYOUT
Unit (mm)
Unit (inch)
Typ.
Typ.
A
1.25
0.049
DIM.
5
B
2.00
0.079
C
2.50
0.098
D
5.00
0.197
Version: F1804
BZV55B2V4 - BZV55B75
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6
Version: F1804
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