PBSS2540M,315

PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor 22 February 2018 Product data sheet 1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to reduced heat generation Reduced printed-circuit board requirements. AEC-Q101 qualified 3. Applications • Power management: • • DC-DC converter • Supply line switching • Battery charger • LCD backlighting. Peripheral driver: • • Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load drivers (e.g. relays, buzzers and motors). 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 500 mA ICM peak collector current single pulse; tp ≤ 1 ms - - 1 A hFE DC current gain VCE = 2 V; IC = 10 mA; Tamb = 25 °C 200 - - RCEsat collector-emitter saturation resistance IC = 500 mA; IB = 50 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02 ; Tamb = 25 °C - 380 500 [1] [2] [1] [2] mΩ Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. Refer to SOT883 standard mounting conditions. PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B Simplified outline base 2 E emitter 3 C collector Graphic symbol C 1 3 2 Transparent top view DFN1006-3 (SOT883) B E sym123 6. Ordering information Table 3. Ordering information Type number PBSS2540M Package Name Description Version DFN1006-3 DFN1006-3: leadless ultra small plastic package; 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code PBSS2540M DC PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 2 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 40 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current - 500 mA ICM peak collector current - 1 A IBM peak base current - 100 mA Ptot total power dissipation [1] [2] - 250 mW [2] [3] - 430 mW [1] [2] single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on an FR4 Printed-Circuit Board, (PCB), single-sided copper, tinplated, standard footprint, with 60 μm copper strip line. Refer to SOT883 standard mounting conditions. 2 Device mounted on an FR4 PCB, single-sided copper, tinplated, mounting pad for collector 1 cm . 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] [4] Min Typ Max Unit [1] [2] - - 500 K/W [2] [3] [4] - - 290 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint, with 60 μm copper strip line. Refer to SOT883 standard mounting conditions. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 3 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 30 V; IE = 0 A; Tj = 150 °C - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 2 V; IC = 10 mA; Tamb = 25 °C 200 - - VCE = 2 V; IC = 100 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02 ; Tamb = 25 °C 150 - - VCE = 2 V; IC = 500 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02 ; Tamb = 25 °C 50 - - IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 50 mV IC = 100 mA; IB = 5 mA; Tamb = 25 °C - - 100 mV IC = 200 mA; IB = 10 mA; Tamb = 25 °C - - 200 mV IC = 500 mA; IB = 50 mA; tp ≤ 300 µs; pulsed; δ ≤ 0.02 ; Tamb = 25 °C - - 250 mV - 380 500 mΩ - - 1.2 V VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; Tamb = 25 °C - - 1.1 V fT transition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz; Tamb = 25 °C 250 450 - MHz Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - - 6 pF PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 4 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor mhc082 1200 mhc085 1200 VBE (mV) hFE 1000 1000 (1) 800 (1) 800 600 (2) (2) 600 400 (3) 400 200 0 10- 1 1 10 102 IC (mA) 200 10- 1 103 VCE = 2 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 1. (3) 1 102 IC (mA) 103 VCE = 2 V (1) Tamb = -55 °C (2) Tamb = 25 °C (3) Tamb = 150 °C DC current gain as a function of collector current; typical values mhc086 103 Fig. 2. Base-emitter voltage as a function of collector current; typical values mhc084 1200 VBEsat (mV) VCEsat (mV) 1000 (1) 800 102 (2) (1) 600 (2) (3) 10 10- 1 1 10 102 IC (mA) 200 10- 1 103 Product data sheet 1 10 102 IC (mA) 103 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Collector-emitter saturation voltage as a function of collector current; typical values PBSS2540M (3) 400 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 3. 10 Fig. 4. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 5 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor mhc083 1200 IC (mA) (1) 1000 (3) (5) 800 (7) (9) 600 mhc087 103 RCEsat (Ω) (2) 102 (4) (6) (8) 10 (10) (1) (2) (3) 400 1 200 0 0 1 2 3 4 VCE (V) 10- 1 10- 1 5 Tamb = 25 °C (1) IB = 25 mA (2) IB = 22.5 mA (3) IB = 20 mA (4) IB = 17.5 mA (5) IB = 15 mA (6) IB = 12.5 mA (7) IB = 10 mA (8) IB = 7.5 mA (9) IB = 5 mA (10) IB = 2.5 mA Fig. 5. 1 10 102 IC (mA) 103 IC/IB = 20 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 6. Collector-emitter saturation resistance as a function of collector current; typical values Collector current as a function of collectoremitter voltage; typical values 11. Package outline 0.62 0.55 0.55 0.47 0.50 0.46 3 0.30 0.22 0.65 0.30 0.22 2 0.20 0.12 1 0.35 Dimensions in mm Fig. 7. 1.02 0.95 03-04-03 Package outline DFN1006-3 (SOT883) PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 6 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 12. Soldering 1.3 0.7 R0.05 (12×) solder lands 0.9 0.6 0.7 solder resist solder paste 0.25 (2×) occupied area 0.3 (2×) 0.3 0.4 (2×) 0.4 Dimensions in mm sot883_fr Fig. 8. Reflow soldering footprint for DFN1006-3 (SOT883) PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 7 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS2540M v.2 20180222 Product data sheet - PBSS2540M v.1 Modifications: • • PBSS2540M v.1 PBSS2540M Product data sheet The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. 20030722 Product data sheet - All information provided in this document is subject to legal disclaimers. 22 February 2018 - © Nexperia B.V. 2018. All rights reserved 8 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Nexperia. 14. Legal information Right to make changes — Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nexperia.com. Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between Nexperia and its customer, unless Nexperia and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Nexperia product is deemed to offer functions and qualities beyond those described in the Product data sheet. Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Nexperia takes no responsibility for the content in this document if provided by an information source outside of Nexperia. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Notwithstanding any damages that customer might incur for any reason whatsoever, Nexperia’ aggregate and cumulative liability towards customer Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS2540M Product data sheet Trademarks All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 9 / 10 PBSS2540M Nexperia 40 V, 0.5 A NPN low VCEsat (BISS) transistor 15. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 4 11. Package outline.......................................................... 6 12. Soldering..................................................................... 7 13. Revision history..........................................................8 14. Legal information....................................................... 9 © Nexperia B.V. 2018. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 22 February 2018 PBSS2540M Product data sheet All information provided in this document is subject to legal disclaimers. 22 February 2018 © Nexperia B.V. 2018. All rights reserved 10 / 10