BSP51
NPN Darlington transistor
13 July 2018
Product data sheet
1. General description
NPN Darlington transistor in an SOT223 plastic package.
PNP complement: BSP61
2. Features and benefits
•
•
•
•
High current of 1 A
Low voltage of 60 V
Integrated diode and resistor
AEC-Q101 qualified
3. Applications
•
Industrial high gain amplification
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCBO
collector-base voltage
open emitter
-
-
80
V
VCES
collector-emitter
voltage
base short-circuited to emitter
-
-
60
V
IC
collector current
-
-
1
A
ICM
peak collector current
-
-
2
A
hFE
DC current gain
1000
-
-
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
VCE = 10 V; IC = 150 mA
[1]
BSP51
Nexperia
NPN Darlington transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
4
C
B
1
2
3
SC-73 (SOT223)
E
aaa-027580
6. Ordering information
Table 3. Ordering information
Type number
BSP51
Package
Name
Description
Version
SC-73
plastic, surface-mounted package with increased heatsink; 4
leads; 4.6 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
SOT223
7. Marking
Table 4. Marking codes
Type number
Marking code
BSP51
BSP51
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
80
V
VCES
collector-emitter voltage
base short-circuited to emitter
-
60
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
1
A
ICM
peak collector current
-
2
A
IBlim
limiting base current
-
100
mA
Ptot
total power dissipation
-
1.25
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
Tamb ≤ 25 °C
[1]
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance
from junction to
ambient
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
Conditions
[1]
Min
Typ
Max
Unit
-
-
96
K/W
-
-
17
K/W
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector 1 cm .
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
10. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)CBO
collector-base
breakdown voltage
IC = 100 µA; IE = 0 A
80
-
-
V
V(BR)CES
collector-emitter
breakdown voltage
IC = 2 mA; VBE = 0 V
60
-
-
V
V(BR)EBO
emitter-base
breakdown voltage
IC = 0 A; IE = 100 µA
5
-
-
V
ICES
collector-emitter cut-off VBE = 0 V; VCE = 60 V
current
-
-
50
nA
IEBO
emitter-base cut-off
current
VEB = 4 V; IC = 0 A
-
-
50
nA
hFE
DC current gain
VCE = 10 V; IC = 150 mA
[1]
1000
-
-
VCE = 10 V; IC = 500 mA
[1]
2000
-
-
IC = 500 mA; IB = 0.5 mA
-
-
1.3
V
IC = 500 mA; IB = 0.5 mA; Tj = 150 °C
-
-
1.3
V
VCEsat
collector-emitter
saturation voltage
VBEsat
base-emitter saturation IC = 500 mA; IB = 0.5 mA
voltage
-
-
1.9
V
ton
turn-on time
-
500
-
ns
toff
turn-off time
IC = 500 mA; IBon = 0.5 mA;
IBoff = -0.5 mA
-
1300
-
ns
fT
transition frequency
VCE = 5 V; IC = 500 mA; f = 100 MHz
-
200
-
MHz
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
mgd838
5000
hFE
4000
3000
2000
1000
0
10- 1
1
10
102
IC (mA)
103
VCE = 10 V
Fig. 1.
DC current gain; typical values
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
Fig. 2.
tf
toff
006aaa003
Transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
aaa-027547
VI = 10 V; T = 200 µs; tp = 6 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω.
VBB = -1.8 V; VCC = 10.7 V.
Oscilloscope: input impedance Zi = 50 Ω.
Fig. 3.
Test circuit or switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
12. Package outline
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
e1
3
Lp
bp
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT223
Fig. 4.
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
SC-73
Package outline SC-73 (SOT223)
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
Fig. 5.
sot223_fr
Reflow soldering footprint for SC-73 (SOT223)
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
1.9
(3×)
2.7
preferred transport
direction during soldering
2.7
1.1
Fig. 6.
occupied area
1.9
(2×)
sot223_fw
Wave soldering footprint for SC-73 (SOT223)
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BSP51 v.3
20180713
Product data sheet
-
BSP50_51_52 v.2
Modifications:
•
•
•
•
The product is AEC-Q101 qualified.
Familiy data sheet is transformed to single data sheet.
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
BSP50_51_52 v.2
19990423
Product data sheet
-
BSP50_51_52 v.1
BSP50_51_52 v.1
19970422
Product data sheet
-
-
BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
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Quick reference data — The Quick reference data is an extract of the
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Applications — Applications that are described herein for any of these
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
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BSP51
Product data sheet
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BSP51
Nexperia
NPN Darlington transistor
Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 4
11. Test information..........................................................5
12. Package outline.......................................................... 6
13. Soldering..................................................................... 7
14. Revision history..........................................................8
15. Legal information.........................................................9
©
Nexperia B.V. 2018. All rights reserved
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Date of release: 13 July 2018
BSP51
Product data sheet
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13 July 2018
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Nexperia B.V. 2018. All rights reserved
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