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BZT52C9V1

BZT52C9V1

  • 厂商:

    TAIWANSEMICONDUCTOR(台半)

  • 封装:

    SOD123F

  • 描述:

    台半 SOD-123F Zzk: 94Ω Pd: 500mW Izk: 1mA

  • 详情介绍
  • 数据手册
  • 价格&库存
BZT52C9V1 数据手册
BZT52C2V4 - BZT52C75 Taiwan Semiconductor 500mW, 5% Tolerance SMD Zener Diodes FEATURES KEY PARAMETERS ● ● ● ● ● Wide zener voltage range selection: 2.4V to 75V VZ tolerance selection of ± 5% Surface mounting device (SMD) type Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 2.4-75 V Test current IZT 5 mA PD 500 mW VF at IF=10mA 1 V TJ Max. 150 °C Package SOD-123F Configuration Single die APPLICATIONS ● Low voltage stabilizers or voltage references ● Adapters ● On-board DC/DC converter MECHANICAL DATA ● ● ● ● ● Case: SOD-123F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 8.85 ± 0.5mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage @ IF=10mA SYMBOL VALUE UNIT VF 1 V Power dissipation PD 500 mW Junction temperature range TJ -65 to +150 °C Storage temperature range TSTG -65 to +150 °C SYMBOL TYP UNIT RӨJA 350 °C/W THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance 1 Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE PART MARKING NUMBER CODE TEST REGULAR TEST LEAKAGE CURRENT IMPEDANCE CURRENT CURRENT IR @ V R VZ @ IZT IZT ZZT @ IZT ZZK @ IZK IZK V mA Ω Ω mA µA V Min. Nom. Max. Max. Max. BZT52C2V4 2V4Z 2.28 2.40 2.52 5 100 564 1 45 1.0 BZT52C2V7 2V7Z 2.57 2.70 2.84 5 100 564 1 18 1.0 BZT52C3V0 3V0Z 2.85 3.00 3.15 5 100 564 1 9 1.0 BZT52C3V3 3V3Z 3.14 3.30 3.47 5 95 564 1 4.5 1.0 BZT52C3V6 3V6Z 3.42 3.60 3.78 5 90 564 1 4.5 1.0 BZT52C3V9 3V9Z 3.71 3.90 4.10 5 90 564 1 2.7 1.0 BZT52C4V3 4V3Z 4.09 4.30 4.52 5 90 564 1 2.7 1.0 BZT52C4V7 4V7Z 4.47 4.70 4.94 5 80 470 1 2.7 2.0 BZT52C5V1 5V1Z 4.85 5.10 5.36 5 60 451 1 1.8 2.0 BZT52C5V6 5V6Z 5.32 5.60 5.88 5 40 376 1 0.9 2.0 BZT52C6V2 6V2Z 5.89 6.20 6.51 5 10 141 1 2.7 4.0 BZT52C6V8 6V8Z 6.46 6.80 7.14 5 15 75 1 1.8 4.0 BZT52C7V5 7V5Z 7.11 7.50 7.86 5 15 75 1 0.9 5.0 BZT52C8V2 8V2Z 7.79 8.20 8.61 5 15 75 1 0.63 5.0 BZT52C9V1 9V1Z 8.65 9.10 9.56 5 15 94 1 0.45 6.0 BZT52C10 10VZ 9.50 10.00 10.50 5 20 141 1 0.18 7.0 BZT52C11 11VZ 10.45 11.00 11.55 5 20 141 1 0.09 8.0 BZT52C12 12VZ 11.40 12.00 12.60 5 25 141 1 0.09 8.0 BZT52C13 13VZ 12.35 13.00 13.65 5 30 160 1 0.09 8.0 BZT52C15 15VZ 14.25 15.00 15.75 5 30 188 1 0.045 10.5 BZT52C16 16VZ 15.20 16.00 16.80 5 40 188 1 0.045 11.2 BZT52C18 18VZ 17.10 18.00 18.90 5 45 212 1 0.045 12.6 BZT52C20 20VZ 19.00 20.00 21.00 5 55 212 1 0.045 14.0 BZT52C22 22VZ 20.90 22.00 23.10 5 55 235 1 0.045 15.4 BZT52C24 24VZ 22.80 24.00 25.20 5 70 235 1 0.045 16.8 BZT52C27 27VZ 25.65 27.00 28.35 2 80 282 0.5 0.045 18.9 BZT52C30 30VZ 28.50 30.00 31.50 2 80 282 0.5 0.045 21.0 BZT52C33 33VZ 31.35 33.00 34.65 2 80 306 0.5 0.045 23.0 BZT52C36 36VZ 34.20 36.00 37.80 2 90 329 0.5 0.045 25.2 BZT52C39 39VZ 37.05 39.00 40.95 2 130 329 0.5 0.045 27.3 BZT52C43 43VZ 40.85 43.00 45.15 2 150 353 0.5 0.045 30.1 BZT52C47 47VZ 44.65 47.00 49.35 2 170 353 0.5 0.045 33.0 BZT52C51 51VZ 48.45 51.00 53.55 2 180 376 0.5 0.045 35.7 BZT52C56 56VZ 53.20 56.00 58.80 2 200 400 0.5 0.045 39.2 BZT52C62 62VZ 58.90 62.00 65.10 2 215 423 0.5 0.045 43.4 BZT52C68 68VZ 64.60 68.00 71.40 2 240 447 0.5 0.045 47.6 BZT52C75 75VZ 71.25 75.00 78.75 2 255 470 0.5 0.045 52.5 2 Max. Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms. 2. The device numbers listed have a standard tolerance on the normal zener voltage of ±5%. 3. For detailed information on price, availability and delivery of normal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest Taiwan Semiconductor representative. 4. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having a rms value equal to 10% of the DC zener current(IZT or IZK) is superimposed to IZT or IZK. ORDERING INFORMATION PART NO. (Note 1) PACKAGE PACKING BZT52Cxxx RHG SOD-123F 3K / 7" Reel BZT52Cxxx RH SOD-123F 3K / 7" Reel Note: 1. "xxx" defines voltage from 2.4V (BZT52C2V4) to 75V (BZT52C75) 3 Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Forward Characteristics Fig. 2 Zener Breakdown Characteristics 100 TA=25oC 100 10 TA=25oC 10 Zener Current (mA) Forward Current (mA) 1000 1 0.1 0.01 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 1.2 1 2 3 4 5 6 7 8 9 10 11 12 Zener Voltage (V) Forward Voltage (V) Fig. 3 Zener Breakdown Characteristics Fig.4 Power Dissipation Curve 100 700 Power Dissipation (mW) Zener Current (mA) 600 10 1 0.1 500 400 300 200 100 0.01 0 15 25 35 45 55 65 75 0 85 50 100 150 200 o Ambient Temperature ( C) Zener Voltage (V) 4 Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.5 Typical Capacitance Fig.6 Effect of Zener Voltage on Impedence 1000 1000 Dynamic Impedence(Ohm) Capacitance (pF) IZ=1mA 1V Bias 100 Bias at 50% of VZ (Nom) 10 IZ=5mA 100 IZ=20mA 10 1 1 1 10 Zener Voltage (V) 1 100 10 100 Zener Voltage (V) 5 Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-123F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.50 1.70 0.059 0.067 B 3.30 3.90 0.130 0.154 C 0.50 0.70 0.020 0.028 D 2.50 2.70 0.098 0.106 E 0.80 1.15 0.031 0.045 F 0.05 0.20 0.002 0.008 SUGGEST PAD LAYOUT Unit (mm) Unit (inch) Min Min C 2.86 0.113 G 1.52 0.060 X 1.34 0.053 X1 4.20 0.165 Y 1.80 0.071 DIM. 6 Version: G1804 BZT52C2V4 - BZT52C75 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 7 Version: G1804
BZT52C9V1
- 物料型号:BZT52C2V4 - BZT52C75,涵盖2.4V至75V的稳压电压范围。 - 器件简介:这些是表面安装设备(SMD)类型的稳压二极管,具有±5%的稳压电压容差,符合RoHS指令和WEEE指令,且无卤素。 - 引脚分配:文档中未明确列出引脚分配,但通常SOD-123F封装具有两个引脚,阳极和阴极。 - 参数特性: - 稳压电压(Vz):2.4V至75V - 测试电流(Izr):5mA - 功率消耗(Po):500mW - 最大结温(T Max.):150°C - 封装类型:SOD-123F - 配置:单片 - 功能详解:适用于低电压稳定器或电压参考、适配器、板载DC/DC转换器等。 - 应用信息:文档提供了应用示例,如低电压稳定器或电压参考、适配器、板载DC/DC转换器等。 - 封装信息:封装类型为SOD-123F,重量大约为8.85 ± 0.5mg,符合UL 94 V-0可燃性等级。
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