UDZS9V1B RR

UDZS3V6B - UDZS36B Taiwan Semiconductor 200mW, 2% Tolerance Zener Diodes FEATURES KEY PARAMETERS ● ● ● ● Wide zener voltage range selection: 3.6V to 36V VZ tolerance selection of ± 2% Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VZ 3.6-36 V PD 200 mW TJ Max. 150 °C APPLICATIONS Package SOD-323F Configuration Single die ● Constant voltage control MECHANICAL DATA ● ● ● ● ● Case: SOD-323F Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Polarity: Indicated by cathode band Weight: 4.594 mg (approximately) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Power dissipation SYMBOL VALUE UNIT PD 200 mW Junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C 1 Version: G1804 UDZS3V6B - UDZS36B Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) ZENER VOLTAGE TEST TEST LEAKAGE CURRENT CURRENT ZZK @ IZK IZK IR @ V R mA REGULAR IMPEDANCE CURRENT PART MARKING NUMBER CODE VZ @ IZT IZT V mA Min. Nom. Max. ZZT @ IZT Ω Ω Max. Max. µA V Max. UDZS3V6B D0 3.60 3.60 3.85 5 90 600 1.0 4.50 1 UDZS3V9B D1 3.89 3.90 4.16 5 90 600 1.0 2.70 1 UDZS4V3B D2 4.17 4.30 4.43 5 90 600 1.0 2.70 1 UDZS4V7B D3 4.55 4.70 4.75 5 80 500 1.0 2.70 1 UDZS5V1B D4 4.98 5.10 5.20 5 60 500 1.0 1.80 2 UDZS5V6B D5 5.49 5.60 5.73 5 40 300 1.0 0.90 3 UDZS6V2B D6 6.06 6.20 6.33 5 40 150 1.0 2.70 3 UDZS6V8B D7 6.65 6.80 6.93 5 30 75 1.0 1.80 4 UDZS7V5B D8 7.28 7.50 7.60 5 30 75 1.0 0.90 4 UDZS8V2B D9 8.02 8.20 8.36 5 30 75 1.0 0.63 5 UDZS9V1B DA 8.85 9.10 9.23 5 30 90 1.0 0.45 6 UDZS10B DB 9.77 10.00 10.21 5 20 150 1.0 0.18 7 UDZS11B DC 10.76 11.00 11.22 5 20 150 1.0 0.09 8 UDZS12B DE 11.74 12.00 12.24 5 20 150 1.0 0.09 9 UDZS13B DF 12.91 13.00 13.49 5 40 160 1.0 0.045 10 UDZS15B DG 14.34 15.00 14.98 5 40 190 1.0 0.045 11 UDZS16B DH 15.85 16.00 16.51 5 40 190 1.0 0.045 12 UDZS18B DJ 17.56 18.00 18.35 5 50 220 1.0 0.045 13 UDZS20B DK 19.52 20.00 20.39 5 60 220 1.0 0.045 15 UDZS22B DL 21.54 22.00 22.47 5 80 240 1.0 0.045 17 UDZS24B DM 23.72 24.00 24.78 5 80 240 1.0 0.045 19 UDZS27B DN 26.19 27.00 27.53 5 100 300 0.5 0.045 21 UDZS30B DP 29.19 30.00 30.69 5 100 300 0.5 0.045 23 UDZS33B DR 32.15 33.00 33.79 5 100 310 0.5 0.045 25 UDZS36B DS 35.07 36.00 36.87 5 100 330 0.5 0.045 27 Notes: 1. The zener voltage (VZ) is tested under pulse condition of 30ms 2. For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances 3. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an ms value equal to 10% of the DC zener current (IZT or IZK) is superimpossed to IZT or IZK 2 Version: G1804 UDZS3V6B - UDZS36B Taiwan Semiconductor ORDERING INFORMATION PART NO. (Note 1) PACKAGE PACKING UDZSxxxB RRG SOD-323F 3K / 7" Reel UDZSxxxB RR SOD-323F 3K / 7" Reel UDZSxxxB R9G SOD-323F 10K / 13" Reel UDZSxxxB R9 SOD-323F 10K / 13" Reel Note: 1. "xxx" defines voltage from 3.6V (UDZS3V6B) to 36V (UDZS36B) 3 Version: G1804 UDZS3V6B - UDZS36B Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) 36 33 30 27 24 22 20 18 16 100 15 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 Fig.1 VZ - IZ Characteristics 10 4.7 Zener Current, IZ (mA) 1 5.1 0.1 0.01 0.001 0.0001 0 5 10 15 20 25 30 35 40 Zener Voltage, VZ (V) Fig.2 Derating Curve Fig.3 Zener Voltage-Temp. Coefficient Characteristics Temp. Coefficient Characteristics(%/℃) Power Dissipation : PD (mW) 250 200 150 100 50 0.10 0.08 Iz=5mA 0.06 Iz=0.5mA 0.04 0.02 0.00 -0.02 -0.04 -0.06 -0.08 0 0 25 50 75 100 125 0 150 4 8 12 16 20 24 28 32 36 40 o Ambient Temperature ( C) Zener Voltage (V) 4 Version: G1804 UDZS3V6B - UDZS36B Taiwan Semiconductor PACKAGE OUTLINE DIMENSION SOD-323F DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.15 1.35 0.045 0.053 B 2.30 2.80 0.091 0.110 C 0.25 0.40 0.010 0.016 D 1.60 1.80 0.063 0.071 E 0.80 1.10 0.031 0.043 F 0.05 0.25 0.002 0.010 SUGGEST PAD LAYOUT DIM. 5 Unit (mm) Unit (inch) Typ. Typ. A 0.63 0.025 B 0.83 0.033 C 1.60 0.063 D 2.86 0.113 Version: G1804 UDZS3V6B - UDZS36B Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 Version: G1804