ESD5Z5V-2/TR

ESD5Z5V ESD5Z5V 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5Z5V is a Uni-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components that may be subjected to ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. It is particularly well-suited for cellular phones, SOD-523 portable device, digital cameras, power supplies and many other portable applications because of its small package and low weight. The ESD5Z5V may be used to provide ESD protection up to Pin1 ±30kV (contact discharge) according to IEC61000-4-2, and Pin2 withstand peak pulse current up to 8 A (8/20μs) according to IEC61000-4-5. Circuit diagram The ESD5Z5V is available in SOD-523 package. Standard products are Pb-free and Halogen-free. *H Pin1 Features  Stand-off voltage: 5V Max.  Transient protection for each line according to * = Date code ( A~Z) IEC61000-4-2 (ESD): ±30kV (contact discharge) H = Device code IEC61000-4-4 (EFT): 40A (5/50ns) Pin2 Marking (Top View) IEC61000-4-5 (surge): 8A (8/20μs)  Capacitance: CJ = 60pF typ.  Solid-state silicon technology Order information Applications  Cell phone handsets and accessories  Personal Digital Assistants (PDAs)  Notebooks, Desktops, and Servers  Portable Instrumentation  Digital Cameras Will Semiconductor Ltd. 1 Device Package Shipping ESD5Z5V-2/TR SOD-523 3000/Tape&Reel Revision 2.5, 2021/09/24 ESD5Z5V Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 120 W Peak pulse current (tp = 8/20μs) IPP 8 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge ±30 kV TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 2.5, 2021/09/24 ESD5Z5V Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Condition Min. Typ. VRWM = 5V Max. Unit 5 V 1 μA 8.0 V 1.2 V Reverse breakdown voltage VBR IT = 1mA 6.0 Forward voltage VF IF = 10mA 0.5 Clamping voltage 1) VCL IPP = 16A, tp = 100ns 11 V Clamping voltage 2) VCL VESD = 8kV 11 V Clamping voltage 3) VC Dynamic resistance 1) RDYN Junction capacitance CJ 0.8 Ipp=1A tp=8/20μs 10 V Ipp=8A tp=8/20μs 15 V Ω 0.25 VR = 0V, f = 1MHz 60 80 pF VR =5V, f = 1MHz 30 45 pF Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 3 Revision 2.5, 2021/09/24 ESD5Z5V 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (TA=25oC, unless otherwise noted) 50 T2 10 0 0 10 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns CJ - Junction capacitance (pF) 12 VC - Clamping voltage (V) Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 Pulse waveform: tp = 8/20s 11 t 60ns 30ns 30 10 9 8 7 70 f = 1MHz VAC = 50mV 65 60 55 50 45 40 35 30 25 6 20 0 1 2 3 4 5 6 7 8 9 0 1 2 3 4 5 VR - Reverse voltage (V) IPP - Peak pulse current (A) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 1000 % of Rated power Peak pulse power (W) 100 100 80 60 40 20 10 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 2.5, 2021/09/24 150 ESD5Z5V Typical characteristics (TA=25oC, unless otherwise noted) 10V/div 10V/div v v 20ns/div ESD clamping 20ns/div ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) TLP current (A) 20 16 12 8 Z0 = 50 4 tr = 2ns tp = 100ns 0 -2 0 2 4 6 8 10 12 14 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 2.5, 2021/09/24 ESD5Z5V PACKAGE OUTLINE DIMENSIONS SOD-523 A1 E b D E2 E1 A TOP VIEW SIDE VIEW 0.4 c 2 1.5 1 0.5 SIDE VIEW Symbol θ RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.51 - 0.77 A1 0.50 0.60 0.70 b 0.25 - 0.40 c 0.08 - 0.15 D 0.75 0.80 0.85 E 1.10 1.20 1.30 E1 1.50 1.60 1.70 E2 0.20 Ref. θ 7︒C Ref. Will Semiconductor Ltd. 6 Revision 2.5, 2021/09/24 ESD5Z5V TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 7 Q4 Revision 2.5, 2021/09/24