ESD56241D15-3/TR

ESD56241DXX ESD56241DXX 1-Line, Uni-directional, Transient Voltage Suppressor www.omnivision-group.com Descriptions The ESD56241DXX is a transient voltage suppressor 3 1 and 2 designed to protect power interfaces. It is suitable to replace multiple discrete components in portable electronics. The ESD56241DXX is specifically designed to protect USB Circuit diagram port. TVS diode with higher surge capability is used to protect USB voltage bus pin. The ESD56241DXX is available in DFN2×2-3L package. PIN3 Standard products are Pb-free and Halogen-free. 3 Features ⚫ Reverse stand-off voltage: 7.5V ~ 24V ⚫ Surge protection according to IEC61000-4-5 8/20μs waveform: IPP see Table 4 ⚫ Low clamping voltage ⚫ Solid-state silicon technology Applications 1 2 PIN1 PIN2 Pin configuration (Top View) ⚫ Power supply protection ⚫ Power management Order information Table 1. Device Device Package Shipping ESD56241D07-3/TR DFN2×2-3L 3000/Tape&Reel 07 ESD56241D10-3/TR DFN2×2-3L 3000/Tape&Reel 10 ESD56241D12-3/TR DFN2×2-3L 3000/Tape&Reel 12 ESD56241D15-3/TR DFN2×2-3L 3000/Tape&Reel 15 ESD56241D18-3/TR DFN2×2-3L 3000/Tape&Reel 18 ESD56241D20-3/TR DFN2×2-3L 3000/Tape&Reel 20 ESD56241D22-3/TR DFN2×2-3L 3000/Tape&Reel 22 ESD56241D24-3/TR DFN2×2-3L 3000/Tape&Reel 24 Will Semiconductor Ltd. code 1 6241 **YW Pin1 Indicator 6241 = Series code ** = Device code YW = Date code Marking Revision 1.6, 2022/04/23 ESD56241DXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp=8/20μs)1)2) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit PPK 4500 W ±30 VESD ESD according to IEC61000-4-2 contact discharge ±30 kV TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20μs current waveform) 2) Measured from pin 3 to pin 1 and pin 2. Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.6, 2022/04/23 ESD56241DXX Electrical characteristics (TA = 25oC, unless otherwise noted) Table 3. Reverse Standoff Type number Voltage Breakdown voltage VBR(V) IBR = 1mA VRWM (V) Junction Reverse leakage current IRM(nA) at VRWM Forward voltage capacitance VF(V) IF = 20mA F=1MHz, VR=0V (pF) Max. Min. Typ. Max. Typ. Max. Min. Max. Typ. Max. ESD56241D07 7.5 8.5 9.3 10.0 - 1000 0.45 1.25 2750 3300 ESD56241D10 10.0 10.7 11.6 12.5 - 1000 0.45 1.25 2150 2600 ESD56241D12 12.0 12.8 13.9 15.0 - 100 0.45 1.25 1650 2000 ESD56241D15 15.0 16.0 17.3 18.6 - 100 0.45 1.25 1250 1500 ESD56241D18 18.0 19.2 21.1 23.0 - 100 0.45 1.25 1050 1150 ESD56241D20 20.0 21.4 23.2 25.0 - 100 0.45 1.25 950 1050 ESD56241D22 22.0 23.5 25.0 26.5 - 100 0.45 1.25 900 1000 ESD56241D24 24.0 25.6 27.3 29.0 - 100 0.45 1.25 800 900 Table 4. Rated peak pulse current IPP （A）1)2) Clamping voltage VCL(V) at IPP（A）1)2) Max. Typ. Max. ESD56241D07 240 16 19 ESD56241D10 205 19 22 ESD56241D12 200 22 25 ESD56241D15 160 26 29 ESD56241D18 150 31 34 ESD56241D20 140 33 36 ESD56241D22 130 35 38 ESD56241D24 120 36 39 Type number Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5. (8/20μs current waveform) 2) Measured from pin 3 to pin 1 and pin 2. Will Semiconductor Ltd. 3 Revision 1.6, 2022/04/23 ESD56241DXX Typical characteristics (TA = 25oC, unless otherwise noted) Time to half-value: T2= 20μs 50 T2 10 0 0 ESD56241D24 ESD56241D22 35 Vc-Clamping Voltage (V) Peak pulse current (%) 40 Front time: T1= 1.25  T = 8μs 100 90 ESD56241D20 ESD56241D18 30 ESD56241D15 25 ESD56241D12 20 ESD56241D10 ESD56241D07 15 10 T 5 T1 10 15 Time (μs) 20 25 30 5 0 80 120 160 200 240 280 N1 Clamping voltage vs. Peak pulse current 8/20μs waveform per IEC61000-4-5 Will Semiconductor Ltd. 40 4 Revision 1.6, 2022/04/23 ESD56241DXX PACKAGE OUTLINE DIMENSIONS DFN2x2-3L E2 D D2 E L K R e b BOTTOM VIEW 0.500 TOP VIEW SIDE VIEW 0.400 1.050 1.100 A3 A1 A 1.300 0.250 0.400 1.600 RECOMMENDED LAND PATTERN(unit:mm) Symbol A A1 A3 b D E D2 E2 e L K R Will Semiconductor Ltd. Min. 0.52 0.00 0.25 1.90 1.90 0.95 1.40 1.20 0.35 0.20 0.13 Dimensions in Millimeters Typ. 0.02 0.10 Ref. 0.30 2.00 2.00 1.05 1.50 1.30 0.40 0.30 - 5 Max. 0.65 0.05 0.35 2.10 2.10 1.15 1.60 1.40 0.45 0.40 - Revision 1.6, 2022/04/23 ESD56241DXX TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm P1 Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 6 Q4 Revision 1.6, 2022/04/23