ESD56231L24-2/TR

ESD56231L24 ESD56231L24 1 Line, Bi-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD56231L24 is a Bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transient) and Lightning. SOD-123FL The ESD56231L24 may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 170A (8/20μs) according to IEC61000-4-5. Pin 2 Pin 1 The ESD56231L24 is available in SOD-123FL package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±24V Max.  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) Pin1 IEC61000-4-4 (EFT): 80A (5/50ns) TDYW Pin2 IEC61000-4-5 (surge): 170A (8/20μs)  Capacitance: CJ = 400pF typ.  Low leakage current  Low clamping voltage  Solid-state silicon technology TD = Device code Y = Year code W = Week code Marking (Top View) Applications  Power lines  Cellular handsets  Tablets  Microprocessors  Portable Electronics Order information Device Package Shipping ESD56231L24-2/TR SOD-123FL 3000/Tape&Reel Will Semiconductor Ltd. 1 Revision 0.94, 2017/06/15 ESD56231L24 Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 5000 W Peak pulse current (tp = 8/20μs) IPP 170 A ESD according to IEC61000-4-2 air discharge ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature kV ±30 TSTG 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage Condition VBR IBR = 1mA 1) VCL VESD = 8kV Clamping voltage 2) VCL IPP = 170A, tp = 8/20μs CJ Typ. VRWM = 24V Clamping voltage Junction capacitance Min. Max. Unit ±24 V 1 µA 24.4 V 28 V 32 V VR = 0V, f = 1MHz 400 560 pF VR = 24V, f = 1MHz 200 280 pF Notes: 1) Contact discharge mode, according to IEC61000-4-2. 2) Non-repetitive current pulse, according to IEC61000-4-5. Will Semiconductor Ltd. 2 Revision 0.94, 2017/06/15 ESD56231L24 o 100 90 Front time: T1= 1.25 T = 8μs 100 90 Time to half-value: T2= 20μs Current (%) Peak pulse current (%) Typical characteristics (TA=25 C, unless otherwise noted) 50 T2 10 10 0 0 T 5 10 T1 15 Time (μs) 20 25 tr = 0.7~1ns 500 CJ - Junction capacitance (pF) VC - Clamping voltage (V) 36 Pulse waveform: tp = 8/20μs 32 30 28 26 24 f = 1MHz VAC = 50mV 450 400 350 300 250 200 150 22 20 -20 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 34 t 60ns 30ns 30 0 20 40 60 100 -24 -20 -16 -12 -8 -4 80 100 120 140 160 180 0 4 8 12 16 20 24 IPP - Peak pulse current (A) VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 10 % of Rated power Peak pulse power (kW) 100 1 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 3 Revision 0.94, 2017/06/15 ESD56231L24 PACKAGE OUTLINE DIMENSIONS SOD-123FL D1 E D E1 L Side View A A1 Bottom View Side View Dimensions in Millimeters Symbol Min. Typ. Max. A 0.88 1.04 1.2 A1 0.1 0.15 0.2 D 2.5 2.7 2.9 D1 3.4 3.675 3.95 E 1.4 1.675 1.95 E1 0.5 0.8 1.1 L 0.7 0.8 0.9 Recommend land pattern (Unit: mm) 2.2 4 1.2 0.9 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 4 Revision 0.94, 2017/06/15 ESD56231L24 TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 5 Q4 Revision 0.94, 2017/06/15