ESD5621W10-2/TR

ESD5621WXX ESD5621WXX 1-Line, Uni-directional, Transient Voltage Suppressor http//:www.sh-willsemi.com Descriptions The ESD5621WXX is a uni-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. The ESD5621WXX may be used to provide ESD protection up to ±30kV (contact and air discharge) according to SOD-323F (Bottom View) IEC61000-4-2, and with high surge capability used to protect USB voltage bus pin (8/20μs) according to IEC61000-4-5. The ESD5621WXX is available in SOD-323F package. Pin1 Standard products are Pb-free and Halogen-free. Pin2 Features  Reverse stand-off voltage: 4.5V ~ 15V  Surge protection according to IEC61000-4-5 Circuit diagram see Table 4  ESD protection according to IEC61000-4-2 ±30kV (contact and air discharge)  Low clamping voltage  Solid-state silicon technology Pin1 XX * Pin2 XX = Device code * Applications = Month code Marking (Top View)  Power supply protection  Power management Order information Table 1. Device Package Shipping Marking ESD5621W04-2/TR SOD-323F 3000/Tape&Reel TE* ESD5621W10-2/TR SOD-323F 3000/Tape&Reel TJ* ESD5621W-2/TR SOD-323F 3000/Tape&Reel Q* ESD5621W15-2/TR SOD-323F 3000/Tape&Reel TD* Will Semiconductor Ltd. 1 Revision 1.3, 2017/07/25 ESD5621WXX Absolute maximum ratings Table 2. Parameter Peak pulse power (tp=8/20μs) ESD according to IEC61000-4-2 air discharge Symbol Rating Unit Ppk 1400 W ±30 VESD ESD according to IEC61000-4-2 contact discharge Junction temperature ±30 TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG kV 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA = 25oC, unless otherwise noted) I IPP VF Forward voltage VRWM Reverse stand-off voltage IF Forward current IR Reverse leakage current VFC Forward clamping voltage VBR Reverse breakdown voltage IPP Peak pulse current VCL Clamping voltage IPP Peak pulse current VFC VF IBR IR VRWM VBR VCL V IF IPP Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.3, 2017/07/25 ESD5621WXX o Electrical characteristics (TA = 25 C, unless otherwise noted) Table 3. Reverse Standoff Type number Voltage Breakdown voltage VBR(V) Junction Reverse leakage current IBR = 1mA IRM(μA) at VRWM VRWM (V) Forward voltage capacitance VF(V) IF = 20mA F = 1MHz, VR =0V (pF) Max Min Typ Max Typ Max Min Max Typ Max ESD5621W04 4.5 5.2 6.1 7.0 - 5.0 0.45 1.25 900 1200 ESD5621W10 10.0 11.5 13.2 15.0 0.1 0.45 1.25 350 500 ESD5621W 12.0 13.0 15.0 17.0 - 0.1 0.45 1.25 300 400 ESD5621W15 15.0 16.0 18.0 20.0 - 0.1 0.45 1.25 270 350 Table 4. Type number Rated peak pulse current IPP （A） 1)3) Clamping voltage VCL(V) at IPP（A） 1)3) Clamping voltage VCL(V) at IPP = 16A, tp = 100ns 2)3) Clamping voltage VCL(V) at VESD = 8kV ESD5621W04 95 14.5 7.0 8.0 ESD5621W10 60 25.0 15.0 16.0 ESD5621W 50 27.5 16.0 17.0 ESD5621W15 45 31.0 20.0 21.0 2)3) Notes: 1) Non-repetitive current pulse, according to IEC61000-4-5.(8/20µs current waveform) 2) Non-repetitive current pulse, according to IEC61000-4-2. 3) Measured from pin 1 to pin 2. Will Semiconductor Ltd. 3 Revision 1.3, 2017/07/25 ESD5621WXX o Typical characteristics (TA = 25 C, unless otherwise noted) Time to half-value: T2= 20s Current (%) Peak pulse current (%) 100 90 Front time: T1= 1.25 T = 8s 100 90 50 T2 10 10 0 0 Time (s) T1 tr = 0.7~1ns ESD5621W15 ESD5621W ESD5621W10 ESD5621W04 30 25 20 15 10 CJ - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s 1000 f = 1MHz VAC = 50mV 900 800 700 600 500 ESD5621W04 400 300 ESD5621W10 ESD5621W15 200 100 5 0 10 20 30 40 50 60 70 80 Time (ns) Contact discharge current waveform per IEC61000-4-2 8/20μs waveform per IEC61000-4-5 35 t 60ns 30ns 20 T 0 90 100 ESD5621W 0 2 4 IPP - Peak pulse current (A) 6 8 10 12 14 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 10000 % of Rated power Peak pulse power (W) 100 1000 100 80 60 40 20 0 1 10 100 Pulse time (s) 1000 25 50 75 100 125 150 o TA - Ambient temperature ( C) Non-repetitive peak pulse power vs. Pulse time Will Semiconductor Ltd. 0 Power derating vs. Ambient temperature 4 Revision 1.3, 2017/07/25 ESD5621WXX PACKAGE OUTLINE DIMENSIONS SOD-323F D b E D1 TOP VIEW c A SIDE VIEW SIDE VIEW Dimensions in Millimeters Symbol Min. Typ. Max. A 0.60 - 1.10 c 0.08 0.13 0.18 b 0.25 - 0.40 D1 1.60 1.70 1.80 E 1.15 1.25 1.35 D 2.30 - 2.80 Recommend land pattern (Unit: mm) 1.40 0.80 0.80 0.80 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing 2.20 Will Semiconductor Ltd. group to ensure your PCB design guidelines are met. 5 Revision 1.3, 2017/07/25 ESD5621WXX TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.3, 2017/07/25