ESD5621WXX
ESD5621WXX
1-Line, Uni-directional, Transient Voltage Suppressor
http//:www.sh-willsemi.com
Descriptions
The ESD5621WXX is a uni-directional TVS (Transient
Voltage Suppressor). It is specifically designed to protect
sensitive electronic components which are connected to
power lines, from over-stress caused by ESD (Electrostatic
Discharge), EFT (Electrical Fast Transients) and Lightning.
The ESD5621WXX may be used to provide ESD protection
up to ±30kV (contact and air discharge) according to
SOD-323F (Bottom View)
IEC61000-4-2, and with high surge capability used to protect
USB voltage bus pin (8/20μs) according to IEC61000-4-5.
The ESD5621WXX is available in SOD-323F package.
Pin1
Standard products are Pb-free and Halogen-free.
Pin2
Features
Reverse stand-off voltage: 4.5V ~ 15V
Surge protection according to IEC61000-4-5
Circuit diagram
see Table 4
ESD protection according to IEC61000-4-2
±30kV (contact and air discharge)
Low clamping voltage
Solid-state silicon technology
Pin1
XX
*
Pin2
XX = Device code
*
Applications
= Month code
Marking (Top View)
Power supply protection
Power management
Order information
Table 1.
Device
Package
Shipping
Marking
ESD5621W04-2/TR
SOD-323F
3000/Tape&Reel
TE*
ESD5621W10-2/TR
SOD-323F
3000/Tape&Reel
TJ*
ESD5621W-2/TR
SOD-323F
3000/Tape&Reel
Q*
ESD5621W15-2/TR
SOD-323F
3000/Tape&Reel
TD*
Will Semiconductor Ltd.
1
Revision 1.3, 2017/07/25
ESD5621WXX
Absolute maximum ratings
Table 2.
Parameter
Peak pulse power (tp=8/20μs)
ESD according to IEC61000-4-2 air discharge
Symbol
Rating
Unit
Ppk
1400
W
±30
VESD
ESD according to IEC61000-4-2 contact discharge
Junction temperature
±30
TJ
Operating temperature
TOP
Lead temperature
TL
Storage temperature
TSTG
kV
125
o
-40~85
o
260
o
-55~150
o
C
C
C
C
Electrical characteristics (TA = 25oC, unless otherwise noted)
I
IPP
VF
Forward voltage
VRWM Reverse stand-off voltage
IF
Forward current
IR
Reverse leakage current
VFC
Forward clamping voltage
VBR
Reverse breakdown voltage
IPP
Peak pulse current
VCL
Clamping voltage
IPP
Peak pulse current
VFC VF
IBR
IR
VRWM VBR VCL
V
IF
IPP
Definitions of electrical characteristics
Will Semiconductor Ltd.
2
Revision 1.3, 2017/07/25
ESD5621WXX
o
Electrical characteristics (TA = 25 C, unless otherwise noted)
Table 3.
Reverse
Standoff
Type number
Voltage
Breakdown voltage
VBR(V)
Junction
Reverse
leakage current
IBR = 1mA
IRM(μA) at VRWM
VRWM (V)
Forward voltage
capacitance
VF(V) IF = 20mA
F = 1MHz,
VR =0V (pF)
Max
Min
Typ
Max
Typ
Max
Min
Max
Typ
Max
ESD5621W04
4.5
5.2
6.1
7.0
-
5.0
0.45
1.25
900
1200
ESD5621W10
10.0
11.5
13.2
15.0
0.1
0.45
1.25
350
500
ESD5621W
12.0
13.0
15.0
17.0
-
0.1
0.45
1.25
300
400
ESD5621W15
15.0
16.0
18.0
20.0
-
0.1
0.45
1.25
270
350
Table 4.
Type number
Rated peak pulse
current IPP (A)
1)3)
Clamping voltage
VCL(V) at IPP(A)
1)3)
Clamping voltage
VCL(V) at
IPP = 16A,
tp = 100ns
2)3)
Clamping voltage
VCL(V) at
VESD = 8kV
ESD5621W04
95
14.5
7.0
8.0
ESD5621W10
60
25.0
15.0
16.0
ESD5621W
50
27.5
16.0
17.0
ESD5621W15
45
31.0
20.0
21.0
2)3)
Notes:
1)
Non-repetitive current pulse, according to IEC61000-4-5.(8/20µs current waveform)
2)
Non-repetitive current pulse, according to IEC61000-4-2.
3)
Measured from pin 1 to pin 2.
Will Semiconductor Ltd.
3
Revision 1.3, 2017/07/25
ESD5621WXX
o
Typical characteristics (TA = 25 C, unless otherwise noted)
Time to half-value: T2= 20s
Current (%)
Peak pulse current (%)
100
90
Front time: T1= 1.25 T = 8s
100
90
50
T2
10
10
0
0
Time (s)
T1
tr = 0.7~1ns
ESD5621W15
ESD5621W
ESD5621W10
ESD5621W04
30
25
20
15
10
CJ - Junction capacitance (pF)
VC - Clamping voltage (V)
Pulse waveform: tp = 8/20s
1000
f = 1MHz
VAC = 50mV
900
800
700
600
500
ESD5621W04
400
300
ESD5621W10
ESD5621W15
200
100
5
0
10
20
30
40
50
60
70
80
Time (ns)
Contact discharge current waveform per IEC61000-4-2
8/20μs waveform per IEC61000-4-5
35
t
60ns
30ns
20
T
0
90 100
ESD5621W
0
2
4
IPP - Peak pulse current (A)
6
8
10
12
14
VR - Reverse voltage (V)
Clamping voltage vs. Peak pulse current
Capacitance vs. Reverse voltage
10000
% of Rated power
Peak pulse power (W)
100
1000
100
80
60
40
20
0
1
10
100
Pulse time (s)
1000
25
50
75
100
125
150
o
TA - Ambient temperature ( C)
Non-repetitive peak pulse power vs. Pulse time
Will Semiconductor Ltd.
0
Power derating vs. Ambient temperature
4
Revision 1.3, 2017/07/25
ESD5621WXX
PACKAGE OUTLINE DIMENSIONS
SOD-323F
D
b
E
D1
TOP VIEW
c
A
SIDE VIEW
SIDE VIEW
Dimensions in Millimeters
Symbol
Min.
Typ.
Max.
A
0.60
-
1.10
c
0.08
0.13
0.18
b
0.25
-
0.40
D1
1.60
1.70
1.80
E
1.15
1.25
1.35
D
2.30
-
2.80
Recommend land pattern (Unit: mm)
1.40
0.80
0.80
0.80
Notes:
This recommended land pattern is for reference
purposes only. Please consult your manufacturing
2.20
Will Semiconductor Ltd.
group to ensure your PCB design guidelines are met.
5
Revision 1.3, 2017/07/25
ESD5621WXX
TAPE AND REEL INFORMATION
RD
Reel Dimensions
W
Tape Dimensions
P1
Quadrant Assignments For PIN1 Orientation In Tape
Q1
Q2
Q1
Q2
Q3
Q4
Q3
Q4
RD
Reel Dimension
W
Overall width of the carrier tape
P1
Pitch between successive cavity centers
Pin1
Pin1 Quadrant
Will Semiconductor Ltd.
User Direction of Feed
7inch
13inch
1 8mm
12mm
16mm
2mm
4mm
8mm
Q1
Q2
Q3
6
Q4
Revision 1.3, 2017/07/25
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