ESD54151N-2/TR

ESD54151N ESD54151N 1-Line, Bi-directional, Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The ESD54151N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to low speed data lines and control lines from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) WBFBP-02C-C and Lightning. The ESD54151N may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 8A (8/20μs) according to IEC61000-4-5. The ESD54151N is available in WBFBP-02C-C package. Standard products are Pb-free and Halogen-free. Circuit diagram Features   Reverse stand-off voltage: ±5.5V Max Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) IEC61000-4-4 (EFT): 40A (5/50ns) IEC61000-4-5 (surge): 8A (8/20μs)  Capacitance: CJ = 17.5pF typ.  Low leakage current: IR < 1nA typ.  Low clamping voltage: VCL = 10V typ. @ IPP = 16A (TLP)  Solid-state silicon technology C = Device code * = Month code ( A~Z) Marking (Top View) Applications  Cellular handsets  Tablets  Laptops  Other portable devices  Network communication devices Will Semiconductor Ltd. Order information Device Package Shipping ESD54151N-2/TR WBFBP-02C-C 10000/Tape&Reel 1 Revision 1.2, 2018/06/29 ESD54151N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 90 W Peak pulse current (tp = 8/20μs) IPP 8 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge Junction temperature TJ Operating temperature TOP Lead temperature TL Storage temperature TSTG ±30 kV ±30 125 o -40~85 o 260 o -55~150 o C C C C Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VCL VTRIG VHOLD VBR VRWM IBR ITRIG IR IR ITRIG IBR VRWM VBR VHOLD VTRIG VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VBR Reverse breakdown voltage IBR Reverse breakdown current VHOLD Reverse holding voltage IPP IHOLD Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.2, 2018/06/29 ESD54151N o Electrical characteristics (TA=25 C, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage VBR Reverse trigger voltage VTRIG Reverse holding voltage VHOLD Condition Min. VRWM = 5.5V IBR = 1mA IHOLD = 50mA Typ.