WPM3005-3/TR

WPM3005 WPM3005 Http://www.sh-willsemi.com Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.057@ VGS=̢10.0V -30 0.057@ VGS=̢10.0V 0.083@ VGS=̢4.5V 0.083@ VGS=̢4.5V SOT-23-3L Descriptions D The WPM3005 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3005 is Pb-free and 1 2 G S Halogen-free. Pin configuration (Top view) Features 3 z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23-3L W35* 2 1 W35 = Device Code * = Month (A~Z) Marking Applications Order information z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Device Will Semiconductor Ltd. WPM3005-3/TR 1 Package Shipping SOT-23-3L 3000/Reel&Tape 2015/08/25 – Rev. 1.3 WPM3005 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID ID V -4.1 -3.4 -3.3 -2.7 1.4 1.0 0.9 0.6 -3.8 -3.2 -3.0 -2.5 1.2 0.8 0.8 0.5 PD PD Unit A W A W Pulsed Drain Current c IDM -25 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State Typical Maximum 65 85 90 125 85 100 115 140 40 60 RșJA RșJA RșJC a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% d Repetitive rating, pulse width limited by junction temperature TJ=150°C. Will Semiconductor Ltd. 2 Unit °C/W 2015/08/25 – Rev. 1.3 WPM3005 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS VDS = -24 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V ±100 nA VGS(TH) VGS = VDS, ID = -250uA -2.0 -2.5 V VGS = -10V, ID = -4.1A 57 60 VGS = -10V, ID = -3.0A 57 60 VGS = -4.5V, ID = -4.0A 83 90 VGS = -4.5V, ID= -3.0A 83 90 VDS = -5 V, ID = -4.1A 7.6 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -1.5 mŸ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 670 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -10 V, VDS = -15 V, 1.31 Gate-to-Source Charge QGS ID = -4.1 A 2.0 Gate-to-Drain Charge QGD 2.45 Turn-On Delay Time td(ON) 6.8 Rise Time tr VGS = -10 V, VDS = -15V, 3.2 Turn-Off Delay Time td(OFF) RL=5.0 Ÿ, RG=15 Ÿ 25.2 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = pF 75 -15 V 62 14.0 nC SWITCHING CHARACTERISTICS ns 4.4 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1.0A 3 -0.55 -0.78 -1.50 V 2015/08/25 – Rev. 1.3 WPM3005 Typical Characteristics (Ta=25oC, unless otherwise noted) 15 VDS= -5V VGS= -10V 16 -IDS - Drain Current (A) -IDS_Drain to Source Current (A) 20 VGS= -4.5V 12 VGS= -4.0V 8 VGS= -3.0V 4 12 0 T=-50 C 0 T=25 C 9 6 0 T=125 C 3 0 0 0 1 2 3 4 5 0 6 1 Output characteristics 4 5 6 200 ID=-4.1A VGS=-4.5V 100 RDS(on)- On-Resistance (m:) RDS(on)- On-Resistance (m:) 3 Transfer characteristics 120 80 VGS=-10V 60 40 160 120 80 40 20 2 4 6 8 10 12 0 14 2 4 -IDS-Drain to Source Current (A) 10 2.4 -VGS(TH) - Threshold Voltage (V) VGS=-10V IDS=-4.1A 70 60 50 40 30 -50 8 On-Resistance vs. Gate-to-Source voltage 90 80 6 -VGS-Gate to Source Voltage(V) On-Resistance vs. Drain current RDS(on)- On-Resistance (m:) 2 -VGS - Gate to Drain Voltage (V) -VDS_Drain to Source Voltage (V) 0 50 100 150 0 Temperature ( C) 2.0 1.8 1.6 1.4 1.2 -25 0 25 50 75 100 125 150 0 Temperature ( C) On-Resistance vs. Junction temperature Will Semiconductor Ltd. IDS= -250uA 2.2 Threshold voltage vs. Temperature 4 2015/08/25 – Rev. 1.3 WPM3005 1.0 VGS=0 f=1MHZ 600 400 Crss Cout Cin 200 0 0 4 8 12 16 0.8 0 T=150 C 0.6 0.4 0 T=25 C 0.2 0.4 20 0.5 0.6 0.7 0.8 0.9 -VSD - Source to Drain Voltage(V) -VDS - Drain to Source Voltage (V) Capacitance Body diode forward voltage 50 100.0 TJ(Max)=150°C TA=25°C 10Ps -ID (Amps) 40 Power (W) 30 RDS(ON) limited 10.0 20 100Ps 1ms 1s 1.0 10ms 10s 0.1s DC 10 0.1 0.1 0 10-3 10-2 10-1 1 10 100 -VDS (Volts) 1 Time (s) 10 100 600 Single pulse power Safe operating power 15 VDS=-15V,IDS=-5A 12 VGS-Gate Voltage C-Capacitance (pF) 800 -ISD - Source to Drain Current (A) 1000 9 6 3 0 0 5 10 15 20 Qg(nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 2015/08/25 – Rev. 1.3 WPM3005 Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Will Semiconductor Ltd. 6 2015/08/25 – Rev. 1.3 WPM3005 Package outline dimensions SOT-23-3L Symbol Dimensions in millimeter Min. Typ. Max. A 1.050 1.150 1.250 A1 0.000 0.050 0.100 A2 1.050 1.100 1.150 b 0.300 0.400 0.500 c 0.100 0.150 0.200 D 2.820 2.920 3.020 E 1.500 1.600 1.700 E1 2.650 2.800 2.950 e 0.950(BSC) e1 1.800 1.900 2.000 L 0.300 0.450 0.600 © 0e Will Semiconductor Ltd. 8e 7 2015/08/25 – Rev. 1.3