WPM2087-3/TR

WPM2087 WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET VDS (V) Http://www.sh-willsemi.com Typical RDS(on) (mΩ) 34@ VGS=-4.5V -20 39 @ VGS=-3.1V 45 @ VGS=-2.5V SOT-23 Descriptions D The WPM2087 is P-Channel 3 enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2087 is Pb-free. 1 2 G S Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOT-23 Applications PE = Device Code Y = Year W = Week(A~z) Marking  DC/DC converters  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. Order information 1 Device Package Shipping WPM2087-3/TR SOT-23 3000/Tape&Reel July.2016- Rev.1.0 WPM2087 Absolute Maximum ratings Parameter Symbol 10 s Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Continuous Drain Current ad Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d T A=25°C ID T A=70°C T A=25°C PD T A=70°C T A=25°C ID T A=70°C T A=25°C PD T A=70°C Unit V -4.3 -3.6 -3.4 -2.9 1.2 0.9 0.8 0.6 -3.4 -3.1 -2.7 -2.5 0.8 0.7 0.5 0.4 A W A W Pulsed Drain Current c IDM -18 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range T stg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 84 102 120 145 130 160 145 190 60 75 a. Surface mounted on FR4 Board using 1 in sq pad size, 1oz Cu. b. Surface mounted on FR4 board using the minimum recommended pad size, 1oz Cu. c. Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%. d. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Will Semiconductor Ltd. 2 Unit °C/W July.2016- Rev.1.0 WPM2087 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA Zero Gate Voltage Drain Current IDSS VDS =-16V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±12V VGS(TH) VGS = VDS, ID = -250uA -20 V -1 uA ±100 nA -0.75 -1.0 V VGS = -4.5V, ID = -5A 34 45 VGS =-3.1V, ID = -2.5A 39 55 VGS =-2.5V, ID = -2.0A 45 59 VDS = -5 V, ID = -3.0A 4 9 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance Forward Transconductance RDS(on) gFS -0.4 mΩ S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS 1182 Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -4.5 V, VDS = -10 V, 0.85 Gate-to-Source Charge QGS ID =-5.0 A 2.5 Gate-to-Drain Charge QGD 2.8 Turn-On Delay Time td(ON) 7.8 Rise Time tr VGS = -10 V, VDS =-15 V, 6.4 Turn-Off Delay Time td(OFF) ID=-5A, RG=6Ω 80 Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = 126 -10 V pF 108 12 nC SWITCHING CHARACTERISTICS ns 18 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1A 3 -0.6 -0.75 -1.2 V July.2016- Rev.1.0 WPM2087 20 Typical Characteristics (Ta=25oC, unless otherwise noted) 20 20 VGS=-6V VGS=-4.5V 16 VGS=-3.5V 12 VGS=-2.5V 8 4 0 0 1 2 12 o 10 150 C 8 6 o 25 C 4 o -50 C 2 1.0 1.5 2.0 -VDS-Drain to Source Voltage(V) -VGS-Gate to Source Voltage(V) Output characteristics Transfer characteristics 2.5 0.20 VGS=-2.5V 0.05 VGS=-3.5V VGS=-4.5V 0.04 0.03 VGS=-6V 4 8 12 16 ID=-5A 0.16 0.12 0.08 0.04 0.00 20 2 3 4 5 6 -IDS-Drain to Source Current(A) -VGS-Gate to Source Voltage (V) On-Resistance vs. Drain current On-Resistance vs. Gate-to-source voltage VGS=-4.5V ID=-5A 1.2 0.9 0.6 -50 14 0 0.5 0.06 1.5 16 3 0.07 0.02 VDS=-5V 18 -IDS-Drain Source Current(A) 15 RDS(ON)-On-Resistance() VGS=5.5V 10 Gate Threshold Voltage Normalized VGS=6V 5 VDS-Drain-to-Source Voltage(V) -IDS-Drain to Source Current(A) =8V GS 0 RDS(ON)-On Resistance() VGS=10VV 0 RDS(ON)-On-Resistance Normalized IDS-Drain-to-Source Current (A) 6 4 2 0 50 100 150 ID=-250uA 1.2 1.0 0.8 0.6 0.4 -50 0 50 100 150 o Temperature ( C) o Temperature ( C) Threshold voltage vs. Temperature On-Resistance vs. Junction temperature Will Semiconductor Ltd. 1.4 4 July.2016- Rev.1.0 WPM2087 2000 10 -ISD-Source to Drain Current (A) Capacitance (pF) F = 1MHZ Ciss 1500 1000 Coss 500 Crss 0 0 3 6 9 12 8 6 2 0.0 15 o T=25 C o T=150 C 4 0.2 0.4 0.6 0.8 1.0 1.2 -VSD-Source to Drain Voltage (V) -VDS-Drain to Source Voltage (V) Body diode forward voltage Capacitance 100 o 100 TJ(MAX)=150 C o -ID-Drain Current (A) TA=25 C Power (W) 80 60 40 Limit by Rdson 10 100us 1 1ms 10s 10ms 0.1 20 100ms 1s DC o TA=25 C Single Pulse 0 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 100 1 10 100 -VDS-Drain to Source Voltage(V) Pulse width (S) *VGS>minimum VGS at which RDS(ON) is specified Safe operating power Single pulse power -VGS-Gate to Source Voltage (V) 4.5 VDS=-10V ID=-5A 3.0 1.5 0.0 0 3 9 6 12 15 Qg(nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 July.2016- Rev.1.0 WPM2087 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 145_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 6 July.2016- Rev.1.0 WPM2087 Package outline dimensions SOT-23 Symbol Dimensions In Millimeters Min. Max. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e e1 0.950 (Typ.) 1.800 2.000 L L1 ș Will Semiconductor Ltd. 0.550 (Typ.) 0.300 0 0.500 o 8o 7 July.2016- Rev.1.0