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WL2836D28-4/TR

WL2836D28-4/TR

  • 厂商:

    WILLSEMI(韦尔)

  • 封装:

    DFN4_1X1MM_EP

  • 描述:

    低噪声,高PSRR,高速,CMOS LDO

  • 数据手册
  • 价格&库存
WL2836D28-4/TR 数据手册
WL2836D WL2836D Low noise, High PSRR, High speed, CMOS LDO Http://www.sh-willsemi.com Descriptions The WL2836D series is a high accuracy, low noise, high speed, high PSRR, low dropout CMOS Linear regulator with high ripple rejection. The devices offer a DFN1x1-4L new level of cost effective performance in cellular phones, laptop and notebook computers, and other portable devices. The WL2836D has the fold-back maximum output current which depends on the output voltage. So the current limit functions both as a short circuit protection and as an output current limiter. The WL2836D regulators are available in standard Pin Configuration (Top View) DFN1x1-4L Package. Standard products are Pb-free and Halogen-free. Features  Input Voltage Range :1.4V~5.5V  Output Voltage Range : 0.9V~3.3V  Output current  Quiescent current : 50μA Typ.  Shut-down current : < 1μA  Dropout voltage  PSRR  Low Output Voltage Noise  Output Voltage Tolerance  Recommend capacitor  Thermal-Overload and Short-Circuit Protection I : Device Code : 300mA * : Voltage Code Y : Year Code W: Week Code : 140mV @ IOUT=0.3A : 78dB @ 1kHz, VOUT=1.8V For detail marking information, please see page 14. Marking : 13×VOUT μVRMS :±1% @ VOUT>2V : 1μF Order Information Applications For detail order information, please see page 14.  MP3/MP4 Players  Cellphones, radiophone, digital cameras  Bluetooth, wireless handsets  Others portable electronics device Will Semiconductor Ltd. 1 Apr, 2021 – Rev 1.9 WL2836D Typical Application Pin Description DFN1x1-4L PIN Symbol 1 VOUT Output 2 GND Ground 3 EN Enable (Active high) 4 VIN Input EP Description GND level, this pin must connect to GND. Block Diagram Will Semiconductor Ltd. 2 Apr, 2021 – Rev 1.9 WL2836D Absolute Maximum Ratings Parameter Value Power Dissipation, PD@TA=25℃ 400 VIN Range -0.3~6.5 V VEN Range -0.3~VIN V VOUT Range -0.3~VIN V IOUT Internally Limited Lead Temperature Range 260 o Storage Temperature Range -55 ~ 150 o Operating Junction Temperature Range 150 o MSL Level-1 ESD Ratings Unit mW C C C HBM 7500 V MM 300 V Recommend Operating Ratings Parameter Value Operating Supply voltage 1.4~5.5 Operating Temperature Range -40~85 Thermal Resistance, RθJA (DFN1x1-4L) 250 Will Semiconductor Ltd. 3 Unit V C o C/W o Apr, 2021 – Rev 1.9 WL2836D Electronics Characteristics (Ta=25oC, VIN=VOUT+1V, CIN=COUT=1μF, IOUT=1mA,unless otherwise noted) Parameter Symbol Condition VOUT ≤2V Output Voltage VOUT Input Voltage VIN Current Limit ILIM Dropout Voltage VDROP Min. Typ. Max. Unit -20 VOUT +20 mV 0.99× VOUT>2V VOUT VOUT 1.4 VEN=VIN 1.01× V VOUT 5.5 300 V mA VOUT=3.3V, IOUT=300mA 118 185 VOUT=3V, IOUT=300mA 122 192 VOUT=2.8V, IOUT=300mA 130 204 VOUT=2.5V, IOUT=300mA 140 220 VOUT=1.6V, IOUT=300mA 205 320 VOUT=1V, IOUT=300mA 370 555 mV Line Regulation △VLINE VIN=VOUT+0.5V~5.5V 1 5 mV Load Regulation △VLoad IOUT=1~300mA 15 28 mV Quiescent Current IQ VOUT=2.8V, IOUT=0 50 90 μA Short Current ISHORT VEN=VIN, VOUT Short to GND 120 Shut-down Current ISHDN VEN=0V 1.0 VIN=(VOUT+1V)DC+ Power Supply Rejection Rate PSRR mA 0.5VP-P IOUT=10mA, VOSET=1.8V μA f=100Hz 80 dB f=1kHz 78 dB f=10kHz 65 dB f=100kHz 56 dB f=1MHz 43 dB EN logic high voltage VENH VIN=5.5V, IOUT=1mA EN logic low voltage VENL VIN=5.5V, VOUT=0V EN Input Current IEN VEN= 0 to 5.5V Output Noise Voltage eNO 10Hz to 100KHz, COUT=1μF Thermal shutdown threshold TSD 160 ℃ Thermal shutdown hysteresis △ TSD 30 ℃ 120 Ω Auto-discharge Nch Tr, ON Resistance Will Semiconductor Ltd. RLOW 1 V 0.4 120 VIN=4V, VCE=0V, VOUT=2.8V 4 13× VOUT V nA μVRMS Apr, 2021 – Rev 1.9 Typical characteristics (Ta=25oC, VIN=VOUT+1V, IOUT=1mA,CIN=COUT=1μF, unless otherwise noted) VOUT=1.2V VOUT=1.8V VOUT=2.8V Will Semiconductor Ltd. 5 Apr, 2021 – Rev 1.9 VOUT=1.8V Quiescent Current(uA) 50 48 46 VIN=EN=2.8V IO=0mA 44 -40 -20 0 20 40 60 80 100 120 140 o Temperature(C ) Quiescent Current vs. Temperature VOUT=1.8V VOUT=2.8V VOUT=3.3V 160 160 140 140 Dropout Voltage (mV) Dropout Voltage (mV) VOUT=3.0V 120 100 80 60 40 VOUT*0.98 20 0 0 50 100 150 200 250 100 80 60 40 VOUT*0.98 20 0 300 Output Current (mA) Dropout Voltage vs.Output Current Will Semiconductor Ltd. 120 0 50 100 150 200 250 300 Output Current (mA) Dropout Voltage vs.Output Current 6 Apr, 2021 – Rev 1.9 Vout=1.2V Vout=1.8V Vout=2.8V VOUT=1.05V Will Semiconductor Ltd. 7 Apr, 2021 – Rev 1.9 VOUT=1.8V VOUT=2.8V 100 90 PSRR (dB) 80 70 60 50 40 30 VIN=3.8VDC+0.5VPP VOUT=2.8V COUT=1uF IOUT=10mA IOUT=20mA IOUT=150mA 20 100 1000 10000 100000 1000000 Output Spectral noise density (V/Hz) Frequency (Hz) PSRR vs. Frequency 10 VIN=VOUT(NOM)+0.5V, IOUT=10mA VOUT=2.8V VOUT=1.8V VOUT=1.2V 1 0.1 0.01 1E-3 10 100 1k 10k 100k 1M 10M Frequency (Hz) Output spectral noise density vs frequency Will Semiconductor Ltd. 8 Apr, 2021 – Rev 1.9 1.Start up (Soft Start from EN) VOUT=1.2V VIN=2.2V,COUT=1μF,IOUT=10mA VIN=2.2V,COUT=1μF,IOUT=250mA VOUT=1.8V VIN=2.8V,COUT=1μF,IOUT=10mA VIN=2.8V,COUT=1μF,IOUT=300mA VOUT=2.8V VIN=3.8V,COUT=1μF,IOUT=10mA VIN=3.8V,COUT=1μF,IOUT=300mA Will Semiconductor Ltd. 9 Apr, 2021 – Rev 1.9 2.Shutdown (Shutdown from EN) VOUT=1.2V VIN=2.2V,COUT=1μF,IOUT=10mA VIN=2.2V,COUT=1μF,IOUT=300mA VOUT=1.8V VIN=2.8V,COUT=1μF,IOUT=10mA VIN=2.8V,COUT=1μF,IOUT=300mA VOUT=2.8V VIN=3.8V,COUT=1μF,IOUT=10mA VIN=3.8V,COUT=1μF,IOUT=300mA Will Semiconductor Ltd. 10 Apr, 2021 – Rev 1.9 3.Load & Line Transient Load step Line Step VOUT=1.2V VIN=2.2V,COUT=1μF,IOUT=1mA-200mA in 1μs VIN=2.2V-3.2V in 20μs,COUT=1μF,IOUT=1mA VOUT=1.8V VIN=2.8V,COUT=1μF,IOUT=1mA-300mA in 1μs VIN=2.8V-3.8V in 20μs,COUT=1μF,IOUT=1mA VOUT=2.8V VIN=3.8V,COUT=1μF,IOUT=1mA-300mA in 1μs VIN=3.8V-4.8V in 20μs,COUT=1μF,IOUT=1mA Will Semiconductor Ltd. 11 Apr, 2021 – Rev 1.9 PACKAGE OUTLINE DIMENSIONS DFN1x1-4L D Ⅰ 1. b k D 1 Ⅰ e TOP VIEW 2. Ⅱ (x4) Ⅱ 1. L E E1 BOTTOM VIEW 2. Ⅲ 1. 0. 2. 0. 40 0 3.(N/A) A3 A1 A 5 23 1.200 0 40 0.065 0. Ⅲ (x2) Ⅳ 0.375 0.180 0.260 Ⅳ 1. 0.910 SIDE VIEW Symbol 2.(N/A) RECOMMENDED LAND PATTERN (Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.32 0.37 0.42 A1 - - 0.05 A3 0.10 Ref. b 0.17 0.22 0.28 L 0.17 - 0.30 D 0.95 1.00 1.05 E 0.95 1.00 1.05 D1 0.43 0.48 0.54 E1 0.43 0.48 0.54 K 0.14 - - e Will Semiconductor Ltd. 0.65BSC 12 Apr, 2021 – Rev 1.9 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 13 Q4 Apr, 2021 – Rev 1.9 ORDER INFORMATION Ordering No. Vout (V) Package Operating Temperature WL2836D08-4/TR 0.8 DFN1x1-4L -40~+85°C WL2836D09-4/TR 0.9 DFN1x1-4L -40~+85°C WL2836D10-4/TR 1.0 DFN1x1-4L -40~+85°C WL2836D105-4/TR 1.05 DFN1x1-4L -40~+85°C WL2836D11-4/TR 1.1 DFN1x1-4L -40~+85°C WL2836D12-4/TR 1.2 DFN1x1-4L -40~+85°C WL2836D15-4/TR 1.5 DFN1x1-4L -40~+85°C WL2836D18-4/TR 1.8 DFN1x1-4L -40~+85°C WL2836D25-4/TR 2.5 DFN1x1-4L -40~+85°C WL2836D27-4/TR 2.7 DFN1x1-4L -40~+85°C WL2836D28-4/TR 2.8 DFN1x1-4L -40~+85°C WL2836D29-4/TR 2.9 DFN1x1-4L -40~+85°C WL2836D30-4/TR 3.0 DFN1x1-4L -40~+85°C WL2836D32-4/TR 3.2 DFN1x1-4L -40~+85°C WL2836D33-4/TR 3.3 DFN1x1-4L -40~+85°C Will Semiconductor Ltd. 14 Marking Shipping Ih Tape and Reel, YW 10000 IA Tape and Reel, YW 10000 IB Tape and Reel, YW 10000 IC Tape and Reel, YW 10000 ID Tape and Reel, YW 10000 IE Tape and Reel, YW 10000 IG Tape and Reel, YW 10000 IH Tape and Reel, YW 10000 IK Tape and Reel, YW 10000 IY Tape and Reel, YW 10000 IL Tape and Reel, YW 10000 Ig Tape and Reel, YW 10000 IM Tape and Reel, YW 10000 Id Tape and Reel, YW 10000 IN Tape and Reel, YW 10000 Apr, 2021 – Rev 1.9
WL2836D28-4/TR 价格&库存

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WL2836D28-4/TR
  •  国内价格
  • 5+0.39100
  • 20+0.35650
  • 100+0.32200
  • 500+0.28750
  • 1000+0.27140
  • 2000+0.25990

库存:0