WPM1485-6/TR

WPM1485 WPM1485 Single P-Channel, -12V, -7.4A, Power MOSFET https://www.omnivision-group.com Rds(on) (Ω) VDS (V) 0.016@ VGS=-4.5V -12 0.022@ VGS=-2.5V 0.032@ VGS=-1.8V DFN2×2-6L Descriptions D 6 The WPM1485 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench D 5 S 4 D technology and design to provide excellent RDS (ON) S with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 D circuit. Standard Product WPM1485 is Pb-free and 2 D 3 G Halogen-free. Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package DFN2×2-6L WLSI = Willsemi D = Device Code Y = Year WW = Week Marking Applications Order information  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Will Semiconductor Ltd. Device Package Shipping WPM1485-6/TR DFN2×2-6L 3000/Reel&Tape 2022/04/22 - Rev.1.5 WPM1485 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current TA=70°C Maximum Power Dissipation Continuous Drain Current TA=25°C a TA=25°C a TA=70°C TA=25°C b Maximum Power Dissipation TA=70°C TA=25°C b TA=70°C c ID PD ID PD Unit V -7.4 -6.4 -5.9 -5.1 1.8 1.3 1.1 0.8 -5.7 -4.6 -4.5 -3.6 1.0 0.6 0.6 0.4 A W A W IDM -30 A Operating Junction Temperature TJ -55~+150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Pulsed Drain Current Thermal resistance ratings Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 55 69 70 91 88 115 125 179 34 44 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width