WPM2031-3/TR

WPM2031 WPM2031 Http://www.sh-willsemi.com Single P-Channel, -20V, -0.65A, Power MOSFET VDS (V) Rds(on) (Ω) 0.495@ VGS=–4.5V D 0.665@ VGS=–2.5V -20 S 0.882@ VGS=–1.8V G ESD Protected Descriptions SOT-723 D The WPM2031 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM2031 is Pb-free and Halogen-free. 1 2 G S Pin configuration (Top view) 3 Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-723 1* 2 1 1 =Device Code * = Month(A~Z) Marking Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. Order information 1 Device Package Shipping WPM2031-3/TR SOT-723 8000/Reel&Tape 2015/08/24- Rev. 1.2 WPM2031 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±5 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -0.65 -0.60 -0.52 -0.48 0.42 0.36 0.27 0.23 -0.55 -0.51 -0.44 -0.41 0.30 0.26 0.19 0.17 A W A W Pulsed Drain Current c IDM -1.0 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 280 340 345 410 400 470 245 280 280 340 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width