ESD56031N-2/TR

ESD56031N ESD56031N 4.6V, Single Li-ion Battery Port Surge Protector http//:www.omnivision-group.com Descriptions The ESD56031N is a bi-directional TVS (Transient Voltage Suppressor). It is specifically designed to protect sensitive electronic components which are connected to power lines, from over-stress caused by ESD (Electrostatic Discharge), EFT (Electrical Fast Transients) and Lightning. DFN1006-2L (Bottom View) The ESD56031N may be used to provide ESD protection up to ±30kV (contact and air discharge) according to IEC61000-4-2, and withstand peak pulse current up to 45A (8/20μs) according to IEC61000-4-5. Pin1 Pin2 The ESD56031N is available in DFN1006-2L package. Standard products are Pb-free and Halogen-free. Circuit diagram Features  Reverse stand-off voltage: ±4.6V Max  Transient protection for each line according to IEC61000-4-2 (ESD): ±30kV (contact and air discharge) Pin1 IEC61000-4-4 (EFT): 40A (5/50ns) Q* Pin2 IEC61000-4-5 (surge): 45A (8/20μs)  Capacitance: CJ = 100pF typ.  Low leakage current  Low clamping voltage: VCL = 5.8V typ. @ IPP = 16A (TLP)  Solid-state silicon technology Q = Device code * = Month code (A~Z) Marking (Top View) Applications  Power lines  Cellular handsets  Tablets  Microprocessors  Portable Electronics Will Semiconductor Ltd. Order information Device Package Shipping ESD56031N-2/TR DFN1006-2L 10000/Tape&Reel 1 Revision 1.1, 2022/04/22 ESD56031N Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 540 W Peak pulse current (tp = 8/20μs) IPP 45 A ESD according to IEC61000-4-2 air discharge VESD ESD according to IEC61000-4-2 contact discharge ±30 kV ±30 TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC TSTG -55~150 oC Junction temperature Storage temperature Electrical characteristics (TA=25 oC, unless otherwise noted) I VRWM Reverse stand-off voltage IR Reverse leakage current VCL Clamping voltage IPP Peak pulse current IPP IHOLD VHOLD VCL VTRIG VRWM ITRIG IR IR ITRIG VRWM VTRIG VHOLD VCL V IHOLD VTRIG Reverse trigger voltage ITRIG Reverse trigger current VHOLD Reverse holding voltage IHOLD IPP Reverse holding current Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.1, 2022/04/22 ESD56031N Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Reverse stand-off voltage VRWM Reverse leakage current IR Reverse breakdown voltage VBR Reverse holding voltage VHOLD Condition Min. Typ. VRWM = 4.6V Max. Unit ±4.6 V 1 μA IT = 1mA 4.7 V IHOLD = 50mA 4.7 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 5.8 V Clamping voltage 2) VCL VESD = 8kV 7.0 V IPP = 1A, tp = 8/20μs 5.5 6.5 V IPP = 20A, tp = 8/20μs 6.5 8.0 V IPP = 45A, tp = 8/20μs 8.5 10.0 V Clamping voltage 3) VCL Dynamic resistance 1) RDYN Junction capacitance CJ Ω 0.06 VR = 0V, f = 1MHz 100 120 pF VR = 4.6V, f = 1MHz 75 90 pF Notes: 1) TLP parameter: Z0 = 50Ω, tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 2) Contact discharge mode, according to IEC61000-4-2. 3) Non-repetitive current pulse, according to IEC61000-4-5. 100 90 Time to half-value: T2= 20s 50 T2 10 0 0 100 90 Front time: T1= 1.25 T = 8s Current (%) Peak pulse current (%) 16A. 10 T T1 30ns 20 tr = 0.7~1ns Time (s) 8/20μs waveform per IEC61000-4-5 Will Semiconductor Ltd. 60ns t Time (ns) Contact discharge current waveform per IEC61000-4-2 3 Revision 1.1, 2022/04/22 ESD56031N Typical characteristics (TA=25oC, unless otherwise noted) 10 CJ - Junction capacitance (pF) VC - Clamping voltage (V) Pulse waveform: tp = 8/20s 9 Pin2 to Pin1 8 Pin1 to Pin2 7 6 5 4 -5 0 5 105 100 95 90 85 80 75 10 15 20 25 30 35 40 45 50 55 f = 1MHz VAC = 50mV IPP - Peak pulse current (A) -4 -3 -2 -1 0 1 2 3 4 VR - Reverse voltage (V) Clamping voltage vs. Peak pulse current Capacitance vs. Reverse voltage 10V/div 10V/div 20ns/div 20ns/div ESD clamping ESD clamping (+8kV contact discharge per IEC61000-4-2) (-8kV contact discharge per IEC61000-4-2) 20 TLP current (A) 16 12 8 4 0 -4 -8 Z0 = 50 -12 tr = 2ns -16 tp = 100ns -20 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.1, 2022/04/22 ESD56031N PACKAGE OUTLINE DIMENSIONS DFN1006-2L I I b 1. 2. 3. L E II II 1. III e 2. D III 1. BOTTOM VIEW TOP VIEW 2. 0.55 SIDE VIEW Symbol A3 A1 A 0.6 0.3 0.85 1.4 RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.36 0.45 0.50 A1 0.00 0.02 0.05 A3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e Will Semiconductor Ltd. 0.65 BSC 5 Revision 1.1, 2022/04/22 ESD56031N TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 6 Q4 Revision 1.1, 2022/04/22