WCM2001-6/TR

WCM2001 WCM2001 N- and P-Channel Complementary, 20V, Power MOSFET VDS (V) Max. RDS(on) (mΩ) N-Channel 500@ VGS=4.5V 20 835@ VGS=2.5V http://www.omnivision-group.com/ ESD Rating:2000V HBM P-Channel 106@ VGS=-4.5V -20 155@ VGS=-2.5V DFN2x2-6L Descriptions The WCM2001 is the N-Channel and P-Channel D1 G2 S2 6 5 4 1 S1 2 G1 3 D2 enhancement MOS Field Effect Transistor as a single package for DC-DC converter or level shift applications, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. Standard Product WCM2001 is Pb-free and Halogen-free. Pin configuration (Top view) Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Package DFN2x2-6L WLSI = Company Code 3J = Device Code WW = Week Code Marking Applications Order information  Driver: Relays, Solenoids, Lamps, Hammers  Power supply converters circuit  Load/Power Switching for portable device Will Semiconductor Ltd. 1 Device Package Shipping WCM2001-6/TR DFN2x2-6L 3000/Tape&Reel May, 2021- Rev.1.4 WCM2001 Absolute Maximum ratings Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 -20 Gate-Source Voltage VGS ±10 ±8 1.2 -3.6 A 0.9 -2.9 A 2 -6 A 1.1 2.0 0.7 1.3 Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25°C TA=70°C d ID IDM TA=25°C c TA=70°C Operating Junction Temperature Storage Temperature Range PD Unit V W TJ -55 to 150 °C TSTG -55 to 150 °C Thermal resistance ratings Single Operation (N-Channel) Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b t ≤ 10 s Steady State t ≤ 10 s Steady State Typical Maximum 74 113 102 122 156 188 223 268 Typical Maximum 51 61 77 92 138 165 199 239 RθJA RθJA Unit °C/W Single Operation (P-Channel) Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b t ≤ 10 s Steady State t ≤ 10 s Steady State RθJA RθJA Unit °C/W Note: 2 a. FR-4 board (38mm X 38mm X t1.6mm, 70um Copper) partially covered with copper (645mm area) b. FR-4 board (38mm X 38mm X t1.6mm, 70um Copper) minimum pad covered with copper c. The power dissipation PD is based on Junction-to-Ambient thermal resistance RθJA t ≤ 10s value and the TJ(MAX)=150°C. d. Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed junction temperature of 150°C. e. The static characteristics are obtained using ~380us pulses, duty cycle ~1%. Will Semiconductor Ltd. 2 May, 2021- Rev.1.4 WCM2001 o N-Channel Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250uA Zero Gate Voltage Drain Current IDSS VDS =16V, VGS = 0V Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±10V VGS(TH) VGS = VDS, ID = 250uA 20 V 1 uA ±10 uA 0.7 1.0 V VGS = 4.5V, ID =800mA 334 500 VGS = 3.1V, ID =600mA 377 660 VGS = 2.5V, ID =300mA 417 835 VGS = 1.8V, ID =200mA 553 1380 ON CHARACTERISTICS Gate Threshold Voltage Drain-to-source On-resistance RDS(on) 0.45 mΩ CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 0 V, f = 1.0MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V, ID =550mA 29 11 pF 4 0.42 0.1 nC 0.16 SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 5.9 Rise Time tr VGS = 4.5 V, VDS = 10 V, 4.8 Turn-Off Delay Time td(OFF) ID=550mA, RG=6Ω 15.5 Fall Time tf ns 3.9 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = 800mA 3 0.9 1.2 V May, 2021- Rev.1.4 DS GS V -Drain-to- WCM2001 Source Volta ge(V) o Ice Current -Drain-to-Sour (A) Typical Characteristics (Ta=25 C, unless otherwise noted) =8V =6V V =5.5V 4 2 0 5 0 15 10 IDS -Drain to Source Current(A) 3.0 VGS=4.5V 2.5 2.0 VGS=3.1V VGS=2.5V 1.5 1.0 VGS=1.8V 0.5 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VDS=2V 2.5 Output Characteristics o 2.0 1.5 o T=150 C 1.0 0.5 0.0 0.0 2.0 o T=-50 C T=25 C 0.5 VDS-Drain-to-Source Voltage(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS -Gate to Source Voltage(V) d Transfer Characteristics d 700 500 RDS(ON)-On Resistance(m) RDS(ON)-Resistance(m) ID=800mA 450 400 VGS=3.1V 350 VGS=4.5V 300 600 500 400 300 200 250 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2.0 2 On-Resistance vs. Drain Current d Gate Threshold Voltage Normalized VGS=4.5V ID=800mA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 5 6 7 8 9 10 On-Resistance vs. Junction Temperature d 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Temperature (oC) Temperature (oC) Will Semiconductor Ltd. 4 On-Resistance vs. Gate-to-Source Voltage 1.8 1.6 3 VGS-Gate to Source Voltage (V) IDS-Drain to Source Current(A) RDS(ON)-On Resistance Normalized DS ID-Drain-to-Source Current(A) 3.0 d Threshold Voltage vs. Temperature 4 May, 2021- Rev.1.4 WCM2001 50 5 ISD-Source to Drain Current (A) VGS=0 f=1MHz C-Capacitance(pF) 40 30 Ciss 20 Coss Crss 10 0 0 2 4 6 8 4 3 o T=150 C 2 o T=25 C 1 10 o T=-50 C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD-Source to Drain Voltage (V) VDS-Drain to Source Voltage(V) Capacitance Body Diode Forward Voltage d 10 350 O TJ(Max)=150 C 300 O TA=25 C 100us ID-Drain Current (A) Power(W) 250 200 150 100 1 Limit by Rdson 1ms 10ms DC 0.1 TJ(MAX)=150 C 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 TA=25 C DC Pulse Single 0.01 0.01 1000 1s 10s o 50 1E-6 100ms o 0.1 Pulse Width(s) 1 10 100 VDS-Drain to Source Voltage(V) Single Pulse power Safe Operating Power VGS-Gate to Source Voltage (V) 4.5 4.0 VDS=10V ID=0.55A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.3 0.6 0.9 1.2 1.5 Gate Charge Characteristics (nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 May, 2021- Rev.1.4 WCM2001 Normalized Effective Transient Thermal Impedance 10 In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 single pulse 0.01 1E-3 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 6 May, 2021- Rev.1.4 WCM2001 o P-Channel Electronics Characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -20 V Zero Gate Voltage Drain Current IDSS VDS =-16V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±8V ±100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -0.7 -1 V Drain-to-source On-resistance RDS(on) VGS = -4.5V, ID = -2.7A 85 106 VGS = -2.5V, ID = -2.2A 107 155 ON CHARACTERISTICS -0.45 mΩ CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS=-4.5 V, VDS =-10 V, 0.4 Gate-to-Source Charge QGS ID =-2.3 A 0.8 Gate-to-Drain Charge QGD 1.4 Turn-On Delay Time td(ON) 8.5 Rise Time tr VGS = -4.5 V, VDS =-6 V, Turn-Off Delay Time td(OFF) ID=-1A, RG=6Ω Fall Time tf VGS = 0 V, f = 1.0MHz, VDS = -10V 290 64 pF 48 5.9 nC SWITCHING CHARACTERISTICS 11 ns 34.6 10 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1A 7 -0.85 -1.5 V May, 2021- Rev.1.4 WCM2001 o Typical Characteristics (Ta=25 C, unless otherwise noted) 20 20 -IDS -Drain to Source Current(A) -ID-Drain-to-Source Current(A) 15 VGS=-4V VGS=-3.1V 10 VGS=-2.5V 5 VGS=-1.8V 0 0.0 0.5 1.0 1.5 VDS=-5V 18 VGS=-4.5V 2.0 2.5 3.0 3.5 4.0 4.5 16 14 12 o T=150 C 10 8 o T=25 C 6 4 2 o T=-50 C 0 0.0 5.0 0.5 1.0 Output Characteristics 1.5 2.0 2.5 3.0 d Transfer Characteristics 200 d ID=-2.3A VGS=-1.8V RDS(ON)-On Resistance(m) RDS(ON)-Resistance (m) 4.0 400 180 160 140 VGS=-3.1V VGS=-2.5V VGS=-4.5V 120 100 80 60 300 200 100 0 1 2 3 4 5 6 1 2 -IDS-Drain to Source Current(A) d 5 d 1.2 Gate Threshold Voltage Normalized VGS=-4.5V ID=-2.7A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 4 On-Resistance vs. Gate-to-Source Voltage 1.5 1.4 3 -VGS-Gate to Source Voltage (V) On-Resistance vs. Drain Current RDSON-On Resistance Normalized 3.5 -VGS -Gate to Source Voltage(V) -VDS-Drain-to-Source Voltage(V) -25 0 25 50 75 100 125 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 o Temperature ( C) Temperature ( C) Will Semiconductor Ltd. 1.0 0.5 -50 150 o On-Resistance vs. Junction Temperature ID=-250uA 1.1 d Threshold Voltage vs. Temperature 8 May, 2021- Rev.1.4 WCM2001 1 600 V GS=0 -ISD-Source to Drain Current (A) f=1MHz C-Capacitance(pF) 500 C iss 400 300 C rss 200 C oss 100 0 0 2 4 6 8 10 12 14 16 18 o T=150 C 0.1 o T=25 C o T=-50 C 0.01 0.2 20 0.3 -VDS-Drain to Source Voltage(V) 0.4 0.5 0.6 0.7 0.8 0.9 -VSD-Source to Drain Voltage (V) Capacitance Body Diode Forward Voltage d 10 350 O TJ(Max)=150 C 100us O TA=25 C 300 ID-Drain Current (A) Limit by Rdson Power(W) 250 200 150 100 1ms 1 10ms DC 100ms o TJ(MAX)=150 C 0.1 1s o 10s TA=25 C DC Pulse Single 50 1E-5 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.01 1000 0.1 Pulse Width(s) 1 10 100 VDS-Drain to Source Voltage(V) Single Pulse power Safe Operating Power 5 VDS=-10V -VGS-Gate to Source Voltage (V) ID=-2.3A 4 3 2 1 0 0 1 2 3 4 5 6 Gate Charge Characteristics (nC) Gate Charge Characteristics Will Semiconductor Ltd. 9 May, 2021- Rev.1.4 WCM2001 Normalized Effective Transient Thermal Impedance 10 In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse 1 0.1 0.01 1E-3 1E-5 single pulse 1E-4 1E-3 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 10 May, 2021- Rev.1.4 WCM2001 PACKAGE OUTLINE DIMENSIONS DFN2x2-6L D K II I I E2 1. H 2. E M D2 e II b E2 1. D2 2. L TOP VIEW BOTTOM VIEW 0.55 0.55 0.65 0.35 0.35 0.35 0.62 A2 A A1 0.65 0.62 0.9 SIDE VIEW 0.9 2.4 RECOMMENDED LAND PATTERN(Unit:mm) Symbol Dimensions in Millimeters Min. Typ. Max. A 0.70 0.75 0.80 A1 0.00 - 0.05 A2 0.203 Ref D 1.90 2.00 2.10 E 1.90 2.00 2.10 D2 0.76 0.93 1.10 E2 0.44 0.60 0.75 b 0.20 0.28 0.35 L 0.17 0.28 0.38 K 0.17 0.27 0.37 H M 0.2 Ref 0.25 0.35 e Will Semiconductor Ltd. 0.45 0.65 BSC 11 May, 2021- Rev.1.4 WCM2001 TAPE AND REEL INFORMATION RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 12 Q4 May, 2021- Rev.1.4