WPM3012-3/TR

WPM3012 WPM3012 Single P-Channel, -30V, -4.6A, Power MOSFET VDS (V) https://www.omnivision-group.com Max. RDS(on) (mΩ) -30 53@ VGS=-10V 93@ VGS=-4.5V Descriptions SOT-23 The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3012 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Small package SOT-23 Pin configuration (Top view) W32 = Device Code Applications  Driver for Relay, Solenoid, Motor, LED etc.  DC-DC converter circuit  Power Switch  Load Switch  Charging Will Semiconductor Ltd. * = Month(A~Z) Marking Order information 1 Device Package Shipping WPM3012-3/TR SOT-23 3000/Reel&Tape 2022/4/22-Rev.1.5 WPM3012 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V -4.6 -3.8 -3.7 -3.0 1.7 1.1 1.1 0.7 A W Pulsed Drain Current c IDM -16 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Lead Thermal Resistance Symbol t ≤ 10 s Steady State Steady State RθJA RθJL Typical Maximum 62 74 91 109 39 47 Unit °C/W Note: a. FR-4 board (38mm X 38mm X t1.6mm, 70um Copper) partially covered with copper (645mm 2 area) b. The power dissipation PD is based on Junction-to-Ambient thermal resistance RθJA t ≤ 10 s value and the TJ(MAX)=150°C. c. Repetitive rating, ~10us pulse width, duty cycle ~1%, keep initial TJ =25°C, the maximum allowed junction temperature of 150°C. d. The static characteristics are obtained using ~380us pulses, duty cycle ~1%. Will Semiconductor Ltd. 2 2022/4/22-Rev.1.5 WPM3012 Electronics Characteristics (Ta=25oC, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BVDSS VGS = 0 V, ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS VDS =-24 V, VGS = 0V -1 uA Gate-to-source Leakage Current IGSS VDS = 0 V, VGS = ±20V ±100 nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250uA -1.9 -2.5 V Drain-to-source On-resistance RDS(on) VGS = -10V, ID = -4A 42 53 VGS = -4.5V, ID = -3A 64 93 ON CHARACTERISTICS -1.4 mΩ CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = -10 V, VDS = -15 V, 1.24 Gate-to-Source Charge QGS ID = -3.1A 1.96 Gate-to-Drain Charge QGD 2.37 Turn-On Delay Time td(ON) 5.6 Rise Time tr VGS = -10 V, VDS = -15 V, 12.7 Turn-Off Delay Time td(OFF) RL=5 Ω, RG=15 Ω 31.9 Fall Time tf VGS = 0 V, f = 1.0 MHz, VDS = -20 V 366 62 pF 54 12 nC SWITCHING CHARACTERISTICS ns 18.7 BODY DIODE CHARACTERISTICS Forward Voltage Will Semiconductor Ltd. VSD VGS = 0 V, IS = -1.0A 3 -0.8 -1.2 V 2022/4/22-Rev.1.5 WPM3012 10 15 20 Typical Characteristics (Ta=25oC, unless otherwise noted) 5.0 7 VDS=5V 4.5 6 VGS=-10V -IDS -Drain to Source Current(A) 5 VDS-Drain-to-Source Voltage(V) 5 VGS=-4.5V 4 VGS=-4V 3 VGS=-3V 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 3.5 3.0 2.5 o 150 C 2.0 1.5 o -50 C 0.5 0.0 0.0 4.0 o 25 C 1.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VGS -Gate to Source Voltage(V) -VDS-Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 200 90 ID=-3.1A 180 80 VGS=-4.5V RDS(ON)-On Resistance(m) 0 70 60 VGS=-10V 50 40 160 140 120 100 80 60 40 30 2 4 6 8 10 12 20 14 3 4 -IDS-Drain to Source Current(A) On-Resistance vs. Drain Current 1.4 7 8 9 10 1.2 VGS=-10V ID=-3.1A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 6 On-Resistance vs. Gate-to-Source Voltage 1.6 1.5 5 -VGS-Gate to Source Voltage (V) Gate Threshold Voltage Normalized VGS=6V VGS=5.5V 0 -ID -Drain-to-Source Current (A) =8V GS 2 RDS(ON)-On Resistance(m) VGS=10VV 4 RDS(ON)-On Resistance Normalized IDS-Drain-to-Source Current (A) 6 -25 0 25 50 75 100 125 1.0 0.9 0.8 0.7 0.6 -50 150 Temperature ( C) o -25 0 25 50 75 100 125 150 Temperature ( C) o On-Resistance vs. Junction Temperature Will Semiconductor Ltd. ID=-250uA 1.1 Threshold Voltage vs. Temperature 4 2022/4/22-Rev.1.5 WPM3012 1.0 600 VGS=0 IS-Source to Drain Current (A) C-Capacitance(pF) 0.9 f=1MHz 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 0.8 0.7 0.6 0.5 o 25 C 0.3 0.2 o 0.1 0.0 0.0 20 o 150 C 0.4 -50 C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD-Source to Drain Voltage (V) -VDS-Source to Drain Voltage(V) Capacitance Body Diode Forward Voltage 350 T O =150 C J(Max) 10 O 300 T =25 C A 100us Limit by Rdson 250 I D -Drain Current (A) 1ms Power(W) 200 150 100 1 10ms T DC o =150 C 100ms J(MAX) o T =25 C 0.1 1s A Single Pulse 10s 50 1E-4 1E-3 0.01 0.1 1 10 100 0.01 0.01 1000 0.1 Pulse Width(s) 1 V 10 100 -Drain to Source Voltage(V) DS Single pulse power Safe operating power 10 V DS -V GS -Gate to Source Voltage (V) =-15V I =-3.1A 8 D 6 4 2 0 0 2 4 6 8 10 12 Gate Charge Characteristics (nC) Gate Charge Characteristics Will Semiconductor Ltd. 5 2022/4/22-Rev.1.5 10 In Descending Order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse Normalized Effective Transient Thermal Impedance 1 0.1 0.01 1E-3 1E-5 single pulse 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration (s) Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 100 1000 PACKAGE OUTLINE DIMENSIONS SOT-23 D Ⅰ 1. L L1 b K E E1 2.(N/A) θ M e Ⅰ c e1 SIDE VIEW TOP VIEW 2.90 0.90 0.80 0.90 A A1 0.80 SIDE VIEW 0.95 RECOMMENDED LAND PATTERN(unit:mm) Symbol Dimensions in Millimeters Min. Typ. Max. A 0.89 1.10 1.30 A1 0.00 - 0.10 b 0.30 0.43 0.55 c 0.05 - 0.20 D 2.70 2.90 3.10 E 1.15 1.33 1.50 E1 2.10 2.40 2.70 e 0.95 Typ. e1 1.70 1.90 2.10 L 0.45 0.55 0.65 L1 0.20 0.35 0.60 M 0.10 0.15 0.25 K 0.00 - 0.25 θ 0︒ - 8︒ Will Semiconductor Ltd. WPM3012 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pin1 User Direction of Feed 7inch 13inch 8mm 12mm 16mm Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Quadrant Q1 Q2 Q3 Will Semiconductor Ltd. 1 Q4