WNM3018-3/TR

WNM3018 WNM3018 Http://www.sh-willsemi.com Small Signal N-Channel, 50V, 0.2A, MOSFET VDS (V) Typical Rds(on) (Ω) 1.2@ VGS=10V 50 1.4@ VGS=4.5V 1.9@ VGS=2.5V 5.4@ VGS=1.8V ESD Rating: 2000V HBM Descriptions The WNM3018 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench Pin configuration (Top view) technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in small signal switch. Standard Product WNM3018 is Pb-free and Halogen-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  HBM ESD protection >2 kV  Small package SOT-323 18 = Device Code * = Month (A~Z) Marking Order information Applications  Driver: Relay, Solenoid, Lamps,Hammers etc.  Power supply converters circuit  Load/Power Switching for potable device Will Semiconductor Ltd. 1 Device Package Shipping WNM3018-3/TR SOT-323 3000/Reel&Tape Jan.2018 – Rev. 1.1 WNM3018 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 50 Gate-Source Voltage VGS ±20 Continuous Drain Current a d Maximum Power Dissipation a d Continuous Drain Current b d Maximum Power Dissipation b d TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 0.25 0.23 0.20 0.18 0.37 0.31 0.24 0.20 0.22 0.20 0.17 0.16 0.28 0.23 0.18 0.15 A W A W Pulsed Drain Current c IDM 1.0 A Operating Junction Temperature TJ -55 to 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 285 335 340 405 385 450 455 545 260 300 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width