WNM4006-3/TR

WNM4006 WNM4006 Http://www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) (ȍ) 0.126@ VGS=10V 45 0.142@ VGS=4.5V 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D The WNM4006 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM4006 is Pb-free and Halogen-free. 1 2 G S Pin configuration (Top view) Features z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 W46* W46 = Device Code * = Month (A~Z) Applications z Driver for Relay, Solenoid, Motor, LED etc. z DC-DC converter circuit z Power Switch z Load Switch z Charging Will Semiconductor Ltd. Marking Order information Device Package Shipping WNM4006-3/TR SOT-23 3000/Reel&Tape 1 Feb, 2012 - Rev.1.0 WNM4006 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 45 Gate-Source Voltage VGS ±20 Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b TA=25°C ID TA=70°C TA=25°C PD TA=70°C TA=25°C ID TA=70°C TA=25°C PD TA=70°C Unit V 1.7 1.5 1.3 1.2 0.8 0.7 0.5 0.4 1.5 1.4 1.2 1.1 0.7 0.6 0.4 0.3 A W A W Pulsed Drain Current c IDM 8 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance Symbol t ” 10 s Steady State t ” 10 s Steady State Steady State RșJA RșJA RșJC Typical Maximum 120 145 132 170 145 174 158 202 60 75 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width