WSB5558N-2/TR

WSB5558N WSB5558N Schottky Barrier Diode Https://www.omnivision-group.com Features ⚫ 100mA Average rectified forward current ⚫ Low forward voltage ⚫ Low leakage current ⚫ Small package DFN1006-2L DFN1006-2L Applications ⚫ Circuit Pin2 Pin1 Low Current rectification Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 30 V Reverse voltage (DC) VR 30 V Average rectified forward current IO 100 mA IFSM 1 A TJ 150 O C Operating temperature Topr -40 ~ 125 O C Storage temperature Tstg -40 ~ 150 O C Peak forward surge current (8.3ms single sine pluse) Junction temperature Electronics characteristics (TA=25oC) Parameter Symbol Condition Min. Reverse Voltage VR IR=100uA 30 Forward Voltage VF Reverse current IR Junction capacitance CJ VR=5V, F=1MHz Thermal Resistance Rθ(JA) Junction to Ambient Typ. Max. Unit IF=10mA 0.35 V IF=100mA 0.45 V VR=10V 15 uA VR=30V 30 uA 21 pF 500 K/W Order Informations Device Package Marking Shipping WSB5558N-2/TR DFN1006-2L T*(1) 10000/Reel&Tape Note 1：*= Month code(A~Z); T= Device code; Will Semiconductor Ltd. 1 Jul, 2021 - Rev. 1.2 WSB5558N Typical characteristics (Ta=25oC, unless otherwise noted) 1000 o 150 C o Reverse Current(uA) Forward Current(A) 0.1 o 125 C o 65 C o 85 C 0.01 o 25 C o 0C 1E-3 o -50 C o 85 C 100 125 C 10 o 65 C 1 o 0C o 25 C 0.1 o -50 C 1E-4 0.0 0.1 0.2 0.3 0.4 0.5 0.01 0.6 5 10 Forward Voltage(V) -50 C 20 o 25 30 Reverse Voltage(V) Forward voltage vs. Forward current Reverse current vs. Reverse voltage 125 100 100 f=1MHz 75 Cj(pF) Forward Current(mA) 15 10 50 25 0 0 25 50 75 100 125 1 150 o 5 10 15 20 25 Reverse Voltage(V) Ambient temperature( C) Forward current derating curve Will Semiconductor Ltd. 0 Junction capacitance vs. Reverse voltage 2 Jul, 2021 - Rev. 1.2 PACKAGE OUTLINE DIMENSIONS DFN1006-2L I b 1. II 2. 3. L E I II 1. III e 2. D III 1. BOTTOM VIEW TOP VIEW 2. 0.55 SIDE VIEW Symbol A3 A1 A 0.6 0.3 0.85 1.4 RECOMMENDED LAND PATTERN(Unit:mm) Dimensions in Millimeters Min. Typ. Max. A 0.36 0.45 0.53 A1 0.00 0.02 0.05 A3 0.125 Ref. D 0.95 1.00 1.05 E 0.55 0.60 0.65 b 0.20 0.25 0.30 L 0.45 0.50 0.55 e Will Semiconductor Ltd. 0.65 BSC 3 Jul, 2021 - Rev. 1.2 TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 4 Q4 Jul, 2021 - Rev. 1.2