WSB5507W-2/TR

WSB5507W WSB5507W Middle Power Schottky Barrier Diode Http://www.sh-willsemi.com Features  0.5 A Average rectified forward current  Low forward voltage, low leakage current  Small package SOD-323 SOD-323 Applications Circuit  Switching circuit  Middle current rectification Absolute maximum ratings Marking Parameter Symbol Value Unit VRRM 40 V VR 40 V IO 0.5 A IFSM 7 Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Peak forward surge current (1) Junction temperature 125 C -40 ~ 85 O C -55 ~ 150 O C TJ Operating temperature Topr Storage temperature Tstg A O Electronics characteristics (TA=25oC) Parameter Forward voltage Symbol (2) Min. Typ. Max. Unit IF=0.2A - 0.38 0.45 V IF=0.5A - 0.5 0.55 V IR VR=40V - 2 100 uA CJ VR=4V, F=1MHz - 27 RθJL Junction to lead VF Reverse current Junction capacitance Thermal resistance Condition (3) 112 pF 140 K/W Order Informations Device WSB5507W-2/TR Package Marking *7 SOD-323 (4) Shipping 3000/Reel&Tape Note 1 : Pulse Width=8.3ms, Single Pulse; Note 2 : Single Pulse test tp=380us; Note 3 : Device mounted on an FR4 PCB，single-sided copper, tin-plated and standard footprint. Note 4 : * = Month code (A~Z); 7 = Device code; Will Semiconductor Ltd. 1 Sep, 2018 - Rev. 1.1 WSB5507W o Typical characteristics (Ta=25 C, unless otherwise noted) Reverse Current Leakage (A) Forward Current (A) 1 0.1 O 120 C 0.01 O 85 C 1E-3 0.0 O 25 C 0.2 O -50 C 0.4 0.6 0.01 O O 85 C 1E-6 O 25 C 1E-8 O -50 C 1E-10 Forward Voltage (V) 5 10 15 25 30 35 40 45 Fig.2 Reverse current vs. Reverse voltage 600 120 C-CAPACITANCE (pF) 100 400 200 0 20 Reverse voltage (V) Fig.1 Forward voltage vs. Forward current Average Forward Current (mA) 120 C 1E-4 80 60 40 20 0 0 50 100 0 5 10 15 20 VR-REVERSE VOLTAGE (V) o Lead Temperature( C) Fig.3 Forward Current Derating Will Semiconductor Ltd. O T=25 C f=1MHz Fig.4 Junction capacitance vs. Reverse voltage 2 Sep, 2018 - Rev. 1.1 25 WSB5507W Package outline dimensions SOD-323 D A2 A1 b E D1 A Side View Top View L1 c θ L Side View Symbol Dimensions in Millimeters Min. Typ. Max. - - 1.10 A A1 0.85Ref A2 0.00 - 0.10 b 0.25 - 0.40 c 0.08 - 0.18 D1 1.60 1.70 1.80 D 2.30 2.55 2.80 E 1.15 - 1.40 L 0.48Ref. L1 0.10 - 0.50 θ 0° - 8° Recommended land pattern (Unit: mm) 0.80 1.40 Notes: 0.80 This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 3 Sep, 2018 - Rev. 1.1 WSB5507W TAPE AND REEL INFORMATION RD Reel Dimensions W Tape Dimensions P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 4 Q4 Sep, 2018 - Rev. 1.1