WNM2077-3/TR

WNM2077 WNM2077 Single N-Channel, 20V, 0.54A, Power MOSFET VDS (V) Http//:www.willsemi.com Rds(on) (Ω) 0.420@ VGS=4.5V 0.580@ VGS=2.5V 20 SOT-723 0.840@ VGS=1.8V ESD Protected Descriptions D 3 The WNM2077 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging 1 2 G S circuit. Standard Product WNM2077 is Pb-free. Pin configuration (Top view) Features ● Trench Technology ● Supper high density cell design ● Excellent ON resistance for higher DC current ● Extremely Low Threshold Voltage ● Small package SOT-723 NB = Device Code * = Month (A~Z) Marking Applications ● Driver for Relay, Solenoid, Motor, LED etc. ● DC-DC converter circuit ● Power Switch ● Load Switch ● Charging Will Semiconductor Ltd. Order information 1 Device Package Shipping WNM2077-3/TR SOT-723 8000/Reel&Tape Sep, 2015 - Rev.1.0 WNM2077 Absolute Maximum ratings Parameter Symbol 10 S Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±10 Continuous Drain Current TA=70°C Maximum Power Dissipation Continuous Drain Current TA=25°C ad TA=70°C TA=25°C bd Maximum Power Dissipation Pulsed Drain Current TA=25°C ad TA=70°C TA=25°C bd TA=70°C c ID PD ID PD Unit V 0.54 0.51 0.43 0.41 0.36 0.31 0.23 0.20 0.49 0.44 0.39 0.35 0.29 0.23 0.18 0.14 A W A W IDM 0.9 A Operating Junction Temperature TJ 150 °C Lead Temperature TL 260 °C Storage Temperature Range Tstg -55 to 150 °C Thermal resistance ratings Parameter Symbol Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Junction-to-Case Thermal Resistance t ≤ 10 s Steady State t ≤ 10 s Steady State Steady State RθJA RθJA RθJC Typical Maximum 255 345 325 395 375 430 445 535 220 300 a Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR-4 board using minimum pad size, 1oz copper c Pulse width