VSO009N06MS-GA

VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET Features  Enhancement mode  VitoMOS® Ⅱ Technology  Fast Switching and High Efficiency V DS 65 V R DS(on),TYP@ VGS=10 V 8 mΩ R DS(on),TYP@ VGS=4.5 V 13 mΩ ID 15 A  100% Avalanche test SOP8 Part ID Package Type Marking Packing VSO009N06MS-GA SOP8 009N06MG 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter Rating Unit V(BR)DSS Drain-Source breakdown voltage 65 V VGS Gate-Source voltage ±20 V IS Diode continuous forward current TA =25°C 2.6 A ID Continuous drain current @VGS=10V TA =25°C 15 A TA =70°C 12 A IDM Pulse drain current tested ① TA =25°C 60 A EAS Avalanche energy, single pulsed ② 6.3 mJ PD Maximum power dissipation 3.1 W TSTG,TJ Storage and junction temperature range -55 to 150 °C Typical Max Unit TA =25°C Thermal Characteristics Symbol Parameter RθJL Thermal Resistance, Junction-to-Lead 24 29 °C/W RθJA Thermal Resistance, Junction-to-Ambient 40 48 °C/W Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 www.vgsemi.com VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET Electrical Characteristics Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 65 -- -- V Zero Gate Voltage Drain Current( Tj =25℃) VDS=60V,VGS=0V -- -- 1 uA Zero Gate Voltage Drain Current( Tj =125℃) VDS=60V,VGS=0V -- -- 100 uA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 1.5 1.8 2.3 V RDS(on) Drain-Source On-State Resistance ③ VGS=10V, ID=10A -- 8 11 mΩ Tj =100℃ -- 11 -- mΩ -- 13 18 mΩ 650 1295 2265 pF 250 500 875 pF 10 20 50 pF 0.5 1.0 3 Ω -- 19 33 nC IDSS RDS(on) Drain-Source On-State Resistance ③ VGS=4.5V, ID=8A Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VDS=30V,ID=10A, -- 8.9 16 nC Qgs Gate-Source Charge VGS=10V -- 4.2 7.4 nC Qgd Gate-Drain Charge -- 3 6 nC -- 7.4 -- ns ID=10A, -- 16 -- ns RG=3.0Ω, -- 17 -- ns -- 5 -- ns VDS=30V,VGS=0V, f=1MHz f=1MHz Switching Characteristics Td(on) Turn-on Delay Time Tr Turn-on Rise Time Td(off) Turn-Off Delay Time Tf Turn-Off Fall Time VDD=30V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=10A,VGS=0V -- 0.8 1.2 V Trr Reverse Recovery Time Isd=10A, VGS=0V -- 20 40 ns Qrr Reverse Recovery Charge di/dt=100A/μs -- 7.7 15 nC NOTE: ① Repetitive rating; pulse width limited by max junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 5A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 380μs; duty cycle≤ 2%. Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 www.vgsemi.com VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. VGS(TH) Gate -Source Voltage Vs.Tj Normalized On Resistance ID, Drain-Source Current (A) Tc, Case Temperature (°C) VGS, Gate -Source Voltage (V) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics Tj - Junction Temperature (°C) VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area www.vgsemi.com VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS, Drain-Source Voltage (V) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg - Total Gate Charge (nC) Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 Fig11. Switching Time Test Circuit and waveforms www.vgsemi.com VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET Marking Information Vs 009N06MG XXXYWW 1st line： 2nd line： 3rd line： Vanguard Code（Vs） ，Vanguard Logo Part Number（009N06MG） Date code （XXXYWW） XXX： Wafer Lot Number Code , code changed with Lot Number Y： Year Code , refer to table below WW： Week Code (01 to 53) Code C D E F G H J K L M N P Q R S T Year 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 www.vgsemi.com VSO009N06MS-GA 65V/15A N-Channel Advanced Power MOSFET SOP8 Package Outline Data Label Dimensions (unit: mm) Min Typ Max A -- -- 1.75 A1 0.10 0.18 0.25 A2 1.25 1.35 1.50 A3 -- 0.25 -- bp 0.36 0.42 0.51 c 0.19 0.22 0.25 D 4.80 4.92 5.00 E 3.80 3.90 4.00 e -- 1.27 -- HE 5.80 6.00 6.20 L -- 1.05 -- Lp 0.40 0.68 1.00 Q 0.60 0.65 0.725 v -- 0.25 -- w -- 0.25 -- y -- 0.10 -- Z 0.30 0.50 0.70 θ 0° 8° Notes: 1. Follow JEDEC MS-012. 2. Dimension "D" does NOT include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15mm per side. 3. Dimension "E" does NOT include interlead flash or protrusion. Interlead flash or protrusion shall not exceed 0.25mm per side. 4. Dimension "bp" does NOT include dambar protrusion. Allowable dambar protrusion shall be 0.1mm total in excess of "bp" dimension at maximum material condition. The dambar cannot be located on the lower radius of the foot. Customer Service Sales and Service: sales@vgsemi.com Vanguard Semiconductor CO., LTD TEL: (86-755) -26902410 FAX: (86-755) -26907027 WEB: www.vgsemi.com Copyright Vanguard Semiconductor Co., Ltd Rev B – JUL, 2021 www.vgsemi.com