20N06

UMW R UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET General Description The 20N06 uses advanced trench technology and design to provide excellent R DS(ON) wi th low gate charge. It can be used in a wide variety of applications. Features VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch PWM Application Power management Package Marking and Ordering Information Device Marking Device Device Package UMW 20N06 UMW 20N06 TO-252 Reel Size Tape width 330mm Quantity 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V 20 A 14 A IDM 120 A EAS 72 mJ PD 55 W TSTG -55 to +150 ℃ TJ -55 to +150 ℃ Drain Current-ContinuousNote3 TC=25℃ TC=100℃ Drain Current-PulsedNote1 Avalanche EnergyNote4 Maximum Power Dissipation TC=25℃ Storage Temperature Range Operating Junction Temperature Range ID Thermal Resistance Parameter Thermal Resistance,Junction-to-Case www.umw-ic.com Symbol Min. Typ. Max Unit RθJC - - 2.7 ℃/W 1 友台半导体有限公司 UMW R UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=15A - 23 29 mΩ VGS=4.5V,IDS=10A - 29 40 mΩ Conditions Min. Typ. Max. Unit - 1562 - - 75.4 - - 66.8 - Min. Typ. Max. - 7.5 - - 21 - - 16 - - 23.5 - - 25 - - 4.5 - - 6.5 - ON CHARACTERISTICS Parameter DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance CiSS Output Capacitance COSS Reverse Transfer Capacitance Crss VDS =25V, VGS = 0V, f=1MHz pF SWITCHING CHARACTERISTICS Parameter Turn-On Delay Time Rise Time Symbol Td(on) tr Turn-Off Delay Time Fall Time Conditions VGS=10V,VDs=30V, RGEN=1.8Ω Td(off) ID=15A tf Total Gate Charge at 10V Qg Gate to Source Gate Charge Qgs Gate to Drain“Miller”Charge Qgd VDS=30V,IDS=15A, VGS=10V Unit ns nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit VSD VGS=0V,IDS=15A - - 1.2 V Reverse Recovery Time trr TJ=25℃,IF=15A - 29 - nS Reverse Recovery Charge Qrr di/dt=100A/us - 45 - nC Drain-Source Diode Forward Voltage Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤ 2%. 4: EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,Start TJ=25℃. www.umw-ic.com 2 友台半导体有限公司 UMW R www.umw-ic.com UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET 3 友台半导体有限公司 UMW R www.umw-ic.com UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET 4 友台半导体有限公司 UMW R www.umw-ic.com UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET 5 友台半导体有限公司 UMW R www.umw-ic.com UMW 20N06 60V N-Channel Enhancement Mode Power MOSFET 6 友台半导体有限公司