2SC4226 R24

2SC4226 NPN Silicon Epitaxial Planar Transistor FEATURES z Low noise. z High gain. z Power dissipation.(PC=150mW) APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -65 to +150 ℃ www.slkormicro.com 1 2SC4226 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 20 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 12 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 3 V Collector cut-off current ICBO VCB=10V,IE=0 1.0 μA Emitter cut-off current IEBO VEB=1V,IC=0 1.0 μA DC current gain hFE VCE=3V,IC=7mA Feed back capacitance Cre VCE=3V,IE=0mA,f=1MHz Transition frequency fT VCE=3V, IE=7mA Noise Figure NF VCE=3V,IC=7mA,f=1GHz 40 3.0 TYP MAX 110 250 0.7 1.5 4.5 1.2 hFE 2.5 R23 R24 R25 40-80 70-140 125-250 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.slkormicro.com 2 pF GHz CLASSIFICANTION OF hFE Marking UNIT dB 2SC4226 www.slkormicro.com 3 2SC4226 PACKAGE OUTLINE Plastic surface mounted package SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.2 2.4 All Dimensions in mm www.slkormicro.com 4