TSH248CX RFG

TSH248 Micropower Omni-Polar Hall Effect Switch TSOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH248 Hall-effect sensor is a temperature stable, stress-resistant, micro-power switch. Superior hightemperature performance is made possible through a dynamic offset cancellation that utilizes chopperstabilization. This method reduces the offset voltage normally caused by device over-molding, temperature dependencies and thermal stress. TSH248 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors and small component geometries. Features ● CMOS Hall IC Technology ● Solid-State Reliability ● Low power consumption for battery applications ● Operation voltage range from 2.5V~3.5V Ordering Information Part No. TSH248CX RFG Package Packing TSOT-23 3kpcs / 7” Reel Note: “G” denote for Halogen Free Product Application ● Solid state switch ● Lid close sensor for power supply devices ● Magnet proximity sensor for reed switch replacement in high duty cycle applications. ● Handheld Wireless Handset Awake Switch (Flip Cell/PHS Phone/Note Book/Flip Video Set) Absolute Maximum Ratings (TA = 25oC unless otherwise noted) Characteristics Limit Value Unit Supply voltage VCC 5 V Output Voltage VOUT 5 V Reverse voltage VCC/OUT -0.3 V Unlimited G mA Magnetic flux density Output current IOUT 2 Operating Temperature Range TOPR -40 to +85 Storage temperature range TSTG Maximum Junction Temp Thermal Resistance - Junction to Ambient Thermal Resistance - Junction to Case Package Power Dissipation o C o C -55 to +150 o C TJ 150 RθJA 543 o RθJC 410 o PD 230 C/W C/W mW Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. 1/8 Version: B14 TSH248 Micropower Omni-Polar Hall Effect Switch Block Diagram Note: Static sensitive device; please observe ESD precautions. Reverse VCC protection is not included. For reverse voltage protection, a 100Ω resistor in series with VCC is recommended. Typical Application Circuit C1：10nF C2：100pF R1：100kΩ 2/8 Version: B14 TSH248 Micropower Omni-Polar Hall Effect Switch Electrical Specifications (DC Operating Parameters: TA=+25oC, VCC=3V) Parameters Test Conditions Min Typ Max Units 2.5 -- 3.5 V Awake State -- 2.5 4.0 mA Sleep State -- 8.0 12 µA Average -- 10 16 µA Output Low Voltage IOUT=1mA -- -- 0.3 V Output Leakage Current Output off -- -- 1 µA Awake Mode Time Operating -- 70 -- µs Sleep Mode Time Operating -- 70 -- ms -- 0.1 -- % Min. Typ. Max. Units Supply Voltage Operating Supply Current Duty Cycle Magnetic Specifications o DC Operating Parameters TA=25 C, VCC=3.0V Parameter Symbol Test Conditions Operating Point BOPS N pole to branded side, B > BOP, VOUT On 6 -- 60 G BOPN S pole to branded side, B > BOP, VOUT On -60 -- -6 G Release Point BRPS N pole to branded side, B < BRP, VOUT Off 5 -- -59 G BRPN S pole to branded side, B < BRP, VOUT Off -60 -- -5 G Hysteresis BHYS |BOPx - BRPx| -- 7 -- G Note: 1G (Gauss) = 0.1mT (millitesla) 3/8 Version: B14 TSH248 Micropower Omni-Polar Hall Effect Switch Output Behavior versus Magnetic Pole o DC Operating Parameters: TA = -40 to 85 C, VCC = 2.5V ~ 3.5V Parameter Test condition OUT South pole B