LPM3401B3F

Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement  -15V/-4.0A,RDS(ON)＜58mΩ(typ.)@VGS=-10V mode power field effect transistors are produced using  -15V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V high cell density, DMOS trench technology.  Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to minimize on-state resistance.  SOT23 Package These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Order Information LPM3401 □ □ □ Applications  Portable Media Players/MP3 players  Cellular and Smart mobile phone  LCD  DSC Sensor  Wireless Card F: Pb-Free Package Type B3: SOT23 Marking Information Device Marking LPM3401 Pin Configurations Package Shipping SOT23 3K/REEL Y:Year code. W:Batch numbers Pin Description LPM3401-02 Dec.-2016 Pin Number Pin Description 1 Gate Pin 2 Source Pin 3 Drain Pin Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 1 of 4 Preliminary Datasheet LPM3401 Absolute Maximum Ratings Symbol Maximum Units Drain-Source Voltage VDS -15 V Gate-Source Voltage VGS ±12 V ID -4 IDM -15 PD 1.4 W TJ, TSTG -55 to 150 °C Parameter Continuous Drain Current TA=25°C Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A Thermal resistance ratings Parameter Symbol Maximum Junction-to-Ambient RθJA LPM3401-02 Dec.-2016 Typ. Email: marketing@lowpowersemi.com 100 Max. 125 www.lowpowersemi.com Units °C/W Page 2 of 4 Preliminary Datasheet LPM3401 Electrical Characteristics Symbol Parameter Condition Min Typ. Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) RDS(ON) ID=-250μA, VGS=0V -15 V VDS=-12V, VGS=0V -1 TJ=55°C -10 Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA Gate Threshold Voltage VDS=VGS ID=-250μA -1.2 V Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage -0.6 VGS=-10V, ID=-4A 55 58 VGS=-4.5V, ID=-3A 64 68 VGS=-2.5V, ID=-2A 85 95 VDS=-5V, ID=-4A 10 IS=-1A,VGS=0V -0.7 uA mΩ mΩ S -1 V DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=-15V, f=1MHz 680 pF 320 pF 65 pF 7 nC 13 nC 1.8 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time LPM3401-02 Dec.-2016 VGS=-10V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω Email: marketing@lowpowersemi.com 12 18 3 7 34 42 3 7 www.lowpowersemi.com nS Page 3 of 4 Preliminary Datasheet LPM3401 Packaging Information LPM3401-02 Dec.-2016 Email: marketing@lowpowersemi.com www.lowpowersemi.com Page 4 of 4