2N5401

2N5401 2N5401 TRANSISTOR (PNP) B C A FEATURE Switching and Amplification in High Voltage Applications such as Telephony Low Current(Max. 600mA) High Voltage(Max.160v) DIM A B C D E F G H J L M E G J D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) VCEO F Collector-Base Voltage -160 V Collector-Emitter Voltage -150 V Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation Tj Junction Temperature Tstg Storage Temperature O CR VEBO -5 V -0.6 A 0.625 W 150 ℃ -55-150 ℃ 1 2 C Unit 3 M Value L Parameter MI VCBO JS Symbol H F MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.55 MAX 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 2.30 0.51 MAX 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Se Parameter Symbol co mi ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) IC= -100μA, IE=0 -160 V IC= -1mA, IB=0 -150 V IE= -10μA, IC=0 -5 V V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO conditions Min Collector cut-off current ICBO VCB= -120 V, Emitter cut-off current IEBO VEB= -3V, IC=0 IE=0 Typ t uc nd Collector-base breakdown voltage Test Max Unit -50 nA -50 nA VCE= -5V, IC=-1 mA hFE(2) VCE= -5V, IC= -10 mA 60 hFE(3) VCE= -5V, IC=-50 mA 50 Collector-emitter saturation voltage VCE(sat) IC= -50mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50mA, IB= -5 mA -1 V 300 MHz DC current gain Transition frequency fT VCE=-5V, f =30MHz IC=-10mA www.jsmsemi.com 80 100 or hFE(1) 300 第１／３页 2N5401 Typical Characteristics V CE = 5V 150 0.2 25 °C - 40 ºC 50 0 0.0001 0.001 0.01 0.1 1 O h 1 125 ºC - 40 ºC 25 °C 0.6 125 ºC - 40 ºC 0 0.1 1 0.8 - 40 ºC 25 °C 0.6 125 ºC 0.4 0.4 = 10 100 0.2 0.1 V CE = 5V 1 10 I C - COLLECTOR CURRENT (mA) 100 t uc nd IC 1 10 - COLLECTOR CURRENT (mA) 100 Base-Emitter ON Voltage vs Collector Current V CB = 100V BV CER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base or Collector-Cutoff Current vs Ambient Temperature I CBO- COLLECTOR CURRENT (nA) 1 10 I C - COLLECTOR CURRENT (mA) co mi Se VBESAT- BASE-EMITTER VOLTAGE (V) CR MI Base-Emitter Saturation Voltage vs Collector Current 0.2 0.1 25 °C 0.1 I C - COLLECTOR CURRENT (A) 0.8 β = 10 0.3 125 °C 100 FE 0.4 VBE(ON-) BASE-EMITTER ON VOLTAGE (V) 200 Collector-Emitter Saturation Voltage vs Collector Current VCESAT- COLLECTOR-EMITTER VOLTAGE (V) vs Collector Current JS - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain 220 10 210 200 1 190 0.1 180 25 50 75 100 125 T A - AMBIENT TEMPERATURE (ºC) 150 170 0.1 www.jsmsemi.com 1 10 RESISTANCE (k Ω) 100 1000 第２／３页 2N5401 Typical Characteristics (continued) Power Dissipation vs Ambient Temperature Input and Output Capacitance vs Reverse Voltage 700 PD - POWER DISSIPATION (mW) 80 600 60 500 TO-92 400 40 20 300 200 MI 0 0 .1 C eb JS CAPACITANCE (pF) f = 1.0 MHz 1 C cb 10 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 O CR V R - REVERSE BIAS VOLTAGE(V) 100 or t uc nd co mi Se www.jsmsemi.com 第３／３页