2N5551

2N5551 NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available (2N5401). Also available in lead free version. ｒ z Ideal for medium power amplification and switching. ｃｏ ｎｄ ｕｃ z ｔｏ APPLICATIONS MAXIMUM RATING @ Ta=25℃ unless otherwise specified Value UNIT VCBO collector-base voltage 180 V VCEO collector-emitter voltage 160 V VEBO emitter-base voltage 6 V IC collector current (DC) 0.6 A PC Collector dissipation 0.35 W ｍｉ Parameter ＪＳ ＭＩ ＣＲ Ｏ　 Ｓｅ Symbol RθJA Thermal resistance,Junction to ambient 357 °C/W Tj ,Tstg junction and storage temperature -55 to +150 °C ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／４页 2N5551 NPN General Purpose Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Test MIN. V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 180 V(BR)CEO Collector-emitter breakdown voltage IC=0.1mA,IB=0 160 V(BR)EBO Emitter-base breakdown voltage IE=10μA,IC=0 6 ICBO collector cut-off current IE = 0; VCB = 120V IEBO emitter cut-off current IC = 0; VEB = 4V hFE MAX. ｔｏ conditions UNIT ｒ Symbol 50 nA - 50 nA DC current gain VCE = 5V; IC= 1mA VCE = 5V;IC = 10mA VCE = 5V;IC = 50mA 80 100 30 300 - VCE(sat) collector-emitter saturation voltage IC = 10mA; IB=1mA IC = 50mA; IB = 5mA - 0.15 0.2 V VBE(sat) base-emitter saturation voltage IC=10mA; IB=1mA IC=50mA; IB=5mA - 1 1 V fT transition frequency IC=10mA; VCB=10V; f=100MHz 100 300 MHz Cobo Output capacitance 6.0 pF ＣＲ Ｏ　 Ｓｅ ｍｉ ｃｏ ｎｄ ｕｃ - IE=10mA; VCE =10V; f=1.0MHz ＪＳ ＭＩ TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／４页 ＪＳ ＭＩ ＣＲ Ｏ　 Ｓｅ ｍｉ ｃｏ ｎｄ ｕｃ ｔｏ ｒ 2N5551 NPN General Purpose Transistor ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／４页 2N5551 NPN General Purpose Transistor PACKAGE OUTLINE A ｒ 4.55+0.20 14.50±0.30 3.54±0.20 D 4.56±0.20 E 1.30±0.20 F 0.46±0.20 G 0.50±0.10 H 0.32±0.10 N 1.30±0.20 P 2.52±0.20 ＪＳ ＭＩ ＣＲ Ｏ　 Ｓｅ ｍｉ ｃｏ C ｎｄ ｕｃ B MILLIMETERS ｔｏ DIM ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ （Units：mm） 第４／４页