2N7002K

2N7002K SOT-23 Plastic-EncapsulateMOSFETS 2N7002K N-Channel 60-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 2.5Ω@ 10V 60V 0.5A 3.0Ω@ 4.5V 3 2.SOURCE 3.DRAIN 1 2 JS General FEATURE ●High density cell design for Low RDS(on) ●Voltage controlled small signal switch ●Rugged and reliable ●High saturation current capability ●ESD protected 2KV HBM MARKING MI CR Equivalent Circuit 702. w O APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter 1.GATE *w：week code co mi Se Maximum ratings (Ta=25℃ unless otherwise noted) nd Parameter Symbol VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Current*1,2 IDM Continuous Source-Drain Diode Current IS Maximum Power Dissipation PD ID 60 Unit r to uc Drain-Source Voltage Value ±20 V 0.5 0.95 A 0.5 0.35 W R θJA 90 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 ~+150 Thermal Resistance from Junction to Ambient(t ≤5s)* 2 ℃ Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad. www.jsmsemi.com 第１／５页 2N7002K SOT-23 Plastic-EncapsulateMOSFETS MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Units Static Characteristics Drain-Source Breakdown Voltage VGS = 0V, ID =250µA 60 VGS(th) VDS =VGS, ID =1mA 1.2 Zero Gate Voltage Drain Current IDSS VDS =48V,VGS = 0V Gate –Source leakage current IGSS VGS =±20V, VDS = 0V Gate Threshold Voltage* JS Drain-Source On-Resistance* MI Total gate charge 1.6 2 V 1 µA ±100 nA 2.0 2.5 Ω VGS =4.5V,ID =500mA 2.5 3.0 Ω VSD VGS=0V, IS=500mA 0.7 Qg VDS =15V,VGS =4.5V,ID =0.2A 1.3 V 0.8 nC 50 pF 25 pF 5 pF 20 ns 40 ns O Dynamic Characteristics** V VGS = 10V, I D =500mA RDS(on) CR Diode Forward Voltage VDS Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Se Input Capacitance VDS =25V,VGS =0V,f =1MHz mi Switching Characteristics** td(on) VDD=30V,ID =0.2A Turn-Off Delay Time td(off) RL=150Ω, VGEN=10V,Rg=10Ω r to uc nd Notes : *Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%. **These parameters have no way to verify. co Turn-On Delay Time www.jsmsemi.com 第２／５页 2N7002K SOT-23 Plastic-EncapsulateMOSFETS Typical Characteristics 1.4 1.00 V GS = 10V 8V 6V 5V 4V 3V V DS = 10V Pulsed 8V 6V 1.0 ID , DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.2 10V 5V 0.8 4V 0.6 0.4 T A = 125° C 0.10 T A = 75° C JS T A = 25° C 0.2 0 0.01 MI 0 T A = -25° C 3V 1 2 1.5 1 5 4 3 V DS ,DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics CR 2.5 3 3.5 4.5 4 5 10 O V GS = 10V Pulsed V DS = 10V ID = 1mA Pulsed T A = 125° C 1.5 1 -25 25 0 50 75 100 125 150 T A = -55° C T A = -25° C 0.1 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 10 7 V GS = 5V Pulsed T A = 25° C Pulsed 6 T A = 85° C 1 r to uc nd T ch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Tem perature T A = 125° C T A = 0° C T A = 25° C co 0 -50 1 mi 0.5 T A = 85° C T A = 150° C Se VGS(th), GATE THRESHOLD VOLTAGE (V) 2 2 V GS , GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics ID = 300mA T A = 150° C 5 4 1 T A = -55 ° C T A = 25° C T A = 0° C 3 T A = -25° C 2 ID = 150mA 1 0.1 0 0.001 0.01 1 0.1 0 ID , DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current www.jsmsemi.com 2 4 6 8 10 12 14 16 18 20 V GS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 第３／５页 2N7002K SOT-23 Plastic-EncapsulateMOSFETS 2.5 1 V GS = 10V Pulsed V GS = 0V Pulsed ID R , R E V E R S E D R A IN C U R R E N T (A) ID = 300mA 2 I D = 150mA 1.5 1 JS 0.5 T A = 25 ° C T A = 0° C 0.01 T A = -25° C 0.001 MI -25 T A = 85 ° C T A = -55° C 0 -75 -50 T A = 125° C T A = 150 ° C 0.1 0 25 50 75 100 125 150 0.5 0 Tch, CHANNEL TEMPERATURE ( C) ° Fig. 7 Static Drain-Source On-State Resistance vs. Channel Tem perature T A= 25°C Pulsed 0.1 0.01 V GS = 10V Pulsed T A = 25° C T A = 150° C 0.1 T A = -55° C C T A = 85 ° 0.01 co V GS = 0V 0.5 1 0.001 0.001 www.jsmsemi.com 0.01 1 0.1 ID , DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current r to uc V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage nd 0.001 0 1.5 1 mi |Yfs|, F O R W A R D T R A N S F E R A D M IT T A N C E (S) V GS = 10V Se ID R , R E V E R S E D R A IN C U R R E N T (A) O CR 1 1 V SD , SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 第４／５页 2N7002K SOT-23 Plastic-EncapsulateMOSFETS SOT-23 Package Outline Dimensions JS Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 3.000 2.800 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° O CR co mi r to uc nd SOT-23 Suggested Pad Layout Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° Se A A1 A2 b c D E E1 e e1 L L1 θ MI Symbol www.jsmsemi.com 第５／５页