PESD05NFA

PESD05NFA – ESD Protection Diode Feature         60 Watts peak pulse power (8/20s) Bidirectional configurations Solid state silicon-avalanche technology Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±30kV (Air), ±30kV (Contact) IEC61000-4-4 (EFT) 40A (5/50ns) IEC61000-4-5 (Lightning): 6A (8/20s) Applications      Mechanical Data Micro processor based equipment Personal Digital Assistants (PDA’s) Notebooks, Desktops and Servers Portable Instrumentation Pagers Peripherals     DFN1006 package Molding compound flammability rating: UL94 V-0 Tape and Reel Packaging RoHS/WEEE Compliant Schematic and PIN Configuration Maximum Rating Parameter Symbol IEC61000-4-2 ESD Voltage – Air Mode VESD(1) IEC61000-4-2 ESD Voltage – Contact Mode Limit ±30 ±30 Unit kV Peak Pulse Power PPP(2) 60 Peak Pulse Current IPP(2) 6 A TL 260 °C Junction Temperature TJ -55~150 °C Storage Temperature Range Tstg -55~150 °C Maximum Lead Solder Temperature (10 seconds duration) W Note: 1. 2. 3. Device stressed with ten non-repetitive ESD pulses. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 1 of 4 Rev: Preliminary_20171226 PESD05NFA – ESD Protection Diode Electrical Characteristics Parameter Reverse Stand-off Voltage Reverse Breakdown Voltage Reverse Leakage Current Peak Pulse Current Clamping Voltage Junction Capacitance Symbol Test Conditions Min Typ VRWM(1) VBR IT = 1mA IR VRWM = 5V CJ Unit 5.0 V 1.0 A 6.0 A 10 V 8.0 pF 6.0 V IPP VC(2) Max IPP = 6A VR = 0V, f = 1MHz 6.0 Note: 1. 2. 3. Other voltages available upon request. Non-repetitive current pulse 8/20s exponential decay waveform according to IEC61000-4-5. All ratings are measured at environmental temperature of TA = 25°C unless otherwise noted. Electrical Parameters Symbol Parameter VC Clamping Voltage @ IPP IPP Peak Pulse Current VBR Breakdown Voltage @ IT IT Test Current IR Reverse Leakage Current @ VRWM VRWM Reverse Stand-off Voltage 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 2 of 4 Rev: Preliminary_20171226 PESD05NFA – ESD Protection Diode Typical Characteristics 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 3 of 4 Rev: Preliminary_20171226 PESD05NFA – ESD Protection Diode DFN1006 Package Outline Dimensions Symbol Dimensions (mm) Min Typ Max A 0.45 0.50 0.55 A1 0.00 0.02 0.05 b 0.45 0.50 0.55 c 0.12 0.15 0.18 D 0.95 1.00 1.05 e 0.65 BSC E 0.55 0.60 0.65 L 0.20 0.25 0.30 L1 h 0.05 REF 0.07 0.12 0.17 Marking Packaging Information Order Code Packaging Reel Size PCS/Reel PESD05NFA DFN1006 7 inch 10,000 新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan. TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw Page: 4 of 4 Rev: Preliminary_20171226