SM2305SRL

SM2305 P-Channel Enhancement-Mode MOSFET (-20V, -4. 5A) PRODUCT SUMMARY VDSS ID -20V -4.5A RDS(on) (m-ohm) Max 53 @ VGS = -10V,ID=-4.5A 60 @ VGS = -4.5V,ID=-4.2A 100 @ VGS = -2.5V,ID=-2.0A ◆ Features 1、Super high dense cell trench design for low RDS(on). 2、Rugged and reliable. 3、SOT-23 package 4、RoHS Compliant. SM2305 Pin Assignment & Symbol ◆ Ordering Information Ordering Number Lead Free Halogen Free SM2305SRL SM2305LRL SM2305SRG SM2305LRG (2)Packing Type 1 G G SOT-23 SOT-23-3L SM2305X X X (1)Package Type Pin Assignment Package 3 D D Packing Tape Reel Tape Reel (1) S：SOT-23；L：SOT-23-3L (2) R：Tape Reel (3) G：Halogen Free；L：Lead Free (3)Lead Free V01 2 S S 1 www.sourcechips.com SM2305 ◆ Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage Maximum Power Dissipation @TA=25 ±12 V PD ℃ Maximum Power Dissipation t @TA=70℃ Drain Current (Pulsed) ID Continuous Drain Current @TA=25 RqJA W 0.7 *1 IDM Tj, Tstg 1.1 -20 A -4.5 A -55 to +150 °C 110 °C/W ℃ Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient a: Surface Mounted on FR4 Board , t ≤ 5sec . b: 1 Pulse Test: Pulse width ≤ 300us , Duty Cycle ≤ 2% . ◆ Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit ● Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current ● On Characteristics VGS(th) RDS(on) gfs -20 - - VDS=-20V, VGS=0V o VDS=-16V, VGS=0V, TJ=55 C - - -1 - - -10 VGS=±12V, VDS=0V - - ±100 VDS=VGS, ID=-250uA -0.6 -0.85 -1.4 VGS=-10V, ID=-4.5A - - 53 VGS=-4.5V, ID=-4.2A - - 60 VGS=-2.5V, ID=-2.0A - - 100 VDS=-5V, ID=-4.7A - 14 - - 920 - - 90 - - 85 - - 4.5 - - 24 18 2.7 22 35 45 25 27 14 31.2 23.4 3.51 44 70 90 50 - - - V uA nA c Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance ● Dynamic Characteristics Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance ● Switching Characteristics Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time mΩ S d Coss Qg V VDS=-20V, VGS=0V, f=1MHz VDS=0V, VGS=0V, f=1MHz pF Ω d tf Turn-off Fall Time trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=-10V, ID=-4.7A, VGS=-4.5V VDD=-10V, RD=10Ω, ID=-1A, VGS=-4.5V, RG=6Ω IDS=-4A, dI/ dt=100A/ uS nC nS nS nC ● Drain-Source Diode Characteristics VSD VGS=0V, IS=-1.7A Drain-Source Diode Forward Voltage b:Pulse Test: Pulse Width £300us, Duty Cycle£2% c: Guaranteed by design , not subject to production testing. V01 2 www.sourcechips.com -1.2 V SM2305 ◆ Characteristics Curve V01 3 www.sourcechips.com SM2305 ◆ Characteristics Curve V01 4 www.sourcechips.com SM2305 ◆ Characteristics Curve V01 5 www.sourcechips.com