1N5819WS

1N5817WS~1N5819WS Schottky Barrier Diodes SOD-323 Features  High surge capability  Low forward voltage drop 2  Guarding for overvoltage protection  Metal silicon junction, majority carrier conduction 1 1.Cathode 2.Anode Marking Code : 1N5817WS：SJ 1N5818WS：SK 1N5819WS：SL Maximum Ratings and Electrical Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Symbols 1N5817WS 1N5818WS 1N5819WS Units Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS Voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Rectified Current IF(AV) 1.0 A IFSM 9 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage at 1 A VF at 3 A 0.45 0.55 0.6 0.75 0.875 0.9 V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25°C IR at TA = 100°C 1 mA 10 Typical Junction Capacitance Cj 110 pF Operating Junction Temperature TJ 150 °C TSTG -55 to +150 °C Storage Temperature Range www.pingjingsemi.com Revision：2.0 Jun-2021 1/3 1N5817WS~1N5819WS Schottky Barrier Diodes Typical Characteristic Curves 10 4 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 Case 125 150 Instaneous Reverse Current (uA) Average Forward Current (A) 1.2 10 3 TJ=125°C 10 2 TJ=75°C 101 TJ=25°C 10 0 20 40 60 80 100 C 5° =2 TJ 125 °C 0.5 Junction Capacitance (pF) 500 TJ= Instaneous Forward Current (A) 1.0 0.2 0.1 0 Percent of Rated Peak Reverse Voltage（%） Temperature (°C) 0 0.1 www.pingjingsemi.com Revision：2.0 Jun-2021 0.2 0.3 0.4 0.5 0.6 0.7 200 100 50 20 10 0.1 1 10 100 2/3 1N5817WS~1N5819WS Schottky Barrier Diodes Package Outline SOD-323 Dimensions in mm E D b A C A1 ∠ALL ROUND L1 E1 A C D E E1 b L1 A1 max 1.1 0.15 1.4 1.8 2.75 0.4 0.45 0.2 min 0.8 0.08 1.2 1.4 2.55 0.25 0.2 max 43 5.9 55 70 108 16 16 min 32 3.1 47 63 100 9.8 7.9 UNIT mm mil www.pingjingsemi.com Revision：2.0 Jun-2021 8 ∠ 9° 3/3