SDT23CXXL02 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s SDT23CXXL02 series are designed to protect sensitive
electronics from damage or latch-up due to ESD and other voltage
induced transient events. They are designed for use in applications
where board space is at a premium. The devices will protect up to two
lines. They are bidirectional devices and may be used on lines where
the signal polarities are above ground. TVS diodes are solid state device
designed specifically for transient suppression.
They feature large cross-sectional area junctions for conduction high
transient currents. They offer desirable characteristics for board level
protection including fast response time, low and clamping voltage, and
no device degradation. The devices may be used to meet the immunity
requirements of IEC61000-4-2, level 4. The size SOT-23 package makes
them ideal for use in portable electronics such as RS-422 I/Os, RS-232
I/Os, notebook computers, and servers.
Features
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IEC61000-4-2 ESD 30KV Air, 30KV contact compliance
SOT-23 surface mount package
Protects bidirectional two I/O lines
Peak power dissipation of 350W under 8/20μs waveform
Working voltage: 5V, 12V ,15V,24V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
3
1
2
Pin Configuration
Applications
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RS-232 and RS-422 data lines
Microprocessor based equipment
LAN/WAN equipment
Desktops PC and serves
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
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Notebook, Laptop and Palmtop computers
Set Top Box
Peripherals
Serial and Parallel ports
1/6
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SDT23CXXL02 SERIES
Maximum Ratings
Rating
Symbol
Value
Unit
PPP
350
W
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
±30
VESD
kV
ESD voltage (Air discharge)
±30
Storage & operating temperature range
TSTG ,TJ
℃
-55~+150
Electrical Characteristics (TJ=25℃)
SDT23C05L02 (Marking: C05)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Symbol
Condition
Min.
Typ.
VRWM
Max.
Unit
5
V
VBR
IBR=1mA
6
V
Reverse leakage current
IR
VR=5V
Each I/O pin
5
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
9.8
V
Clamping voltage (tp=8/20μs)
VC
IPP=10A
18
V
Peak Pulse Current(tp=8/20μs)
IPP
17
A
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
Symbol
Condition
150
pF
SDT23C12L02 (Marking: C12)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Min.
Typ.
VRWM
Max.
Unit
12
V
VBR
IBR=1mA
Reverse leakage current
IR
VR=5V
Each I/O pin
1
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
19
V
Clamping voltage (tp=8/20μs)
VC
IPP=10A
32
V
Peak Pulse Current(tp=8/20μs)
IPP
11
A
Off state junction capacitance
CJ
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
0Vdc,f=1MHz
Between I/O
pins and GND
2/6
13.3
V
65
pF
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SDT23CXXL02 SERIES
SDT23C15L02 (Marking: C15)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Symbol
Condition
Min.
Typ.
VRWM
Max.
Unit
15
V
VBR
IBR=1mA
16.7
V
Reverse leakage current
IR
VR=5V
Each I/O pin
1
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
24
V
Clamping voltage (tp=8/20μs)
VC
IPP=10A
38
V
Peak Pulse Current(tp=8/20μs)
IPP
10
A
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
Symbol
Condition
60
pF
SDT23C24L02 (Marking: C24)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Min.
Typ.
VRWM
Max.
Unit
24
V
VBR
IBR=1mA
Reverse leakage current
IR
VR=5V
Each I/O pin
1
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
43
V
Clamping voltage (tp=8/20μs)
VC
IPP=5A
52
V
Peak Pulse Current(tp=8/20μs)
IPP
5
A
Off state junction capacitance
CJ
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
0Vdc,f=1MHz
Between I/O
pins and GND
3/6
26.7
V
40
pF
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SDT23CXXL02 SERIES
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 2. Pulse Waveforms
110
100
100
% of Peak Power Current
Peak Power Dissipation (%)
90
80
70
60
50
40
30
20
Peak value Ipp
Waveform
Parameters:
tr=8µs
td=20µs
90
80
70
60
50
40
30
td=t|IPP/2
20
10
0
tr
10
0
25
50
75
100
125
150
0
175
0
5
10
15
20
25
30
t-Time (μs)
TA-Ambient Temperature (℃)
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
Figure 4. Normalized Capacitance vs. Reverse Voltage
10000
250
Junction Capacitance (pF)
PPP - Peak Pulse Power (W)
F=1MHz
1000
100
10
0.1
1
200
150
100
SDT23C12L02
50
SDT23C15L02
0
10
100
1000
tP-Pulse Duration (µs)
10000
Figure 5. ESD Clamping(8kV Contact IEC61000-4-2)
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
SDT23C05L02
SDT23C24L02
0
1
2
3
4
5
SDT23C15L02
Reverse Voltage (V)
Figure 6. ESD Clamping(-8kV Contact IEC61000-4-2)
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SDT23CXXL02 SERIES
Recommended Soldering Conditions
Reflow Soldering
Critical Zone
TL to TP
tP
TP
Ramp-up
TL
tL
Temperature
TS max
TS min
Ramp-down
tS
Preheat
25
t 25℃ to Peak
Time
Recommended Conditions
Profile Feature
Pb-Free Assembly
Average ramp-up rate (TL to TP)
3℃/second max.
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (ts)
150℃
200℃
60-180 seconds
TS max to TL
-Ramp-up Rate
3℃/second max.
Time maintained above:
-Temperature (TL)
-Time (tL)
217℃
60-150 seconds
Peak Temperature (TP)
260℃
Time within 5℃ of actual Peak Temperature (tP)
Ramp-down Rate
6℃/second max.
Time 25℃ to Peak Temperature
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
20-40 seconds
8 minutes max.
5/6
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SDT23CXXL02 SERIES
Dimensions (SOT-23)
Dimension
E
F
A
G
2
Symbol
1
B
C
H I
3
J
D
0.8
(3X)
0.9
(3X)
1.9
0.95
1.8
Recommended Soldering Pad Layout
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.08
0.18
0.003
0.007
B
0.15
-
0.006
-
C
-
0.13
-
0.005
D
0.89
1.09
0.035
0.043
E
2.80
3.05
0.110
0.120
F
1.90
0.075
G
0.95
0.037
H
1.19
1.40
0.047
0.055
I
2.10
2.49
0.083
0.098
J
0.35
0.50
0.014
0.020
Packaging
Tape
P0
P1
P2
K
F
B
W
E
øD0
B0
A0
øD1
t
A
Reel
D2
D
Revision:ESD-SDT23CXXL02 SERIES-001(A2)
W1
Symbol
Dimension (mm)
W
8.00±0.30
P0
4.00±0.10
P1
4.00±0.10
P2
2.00±0.10
D0
Φ1.55±0.10
D1
Φ1.00±0.05
E
1.75±0.10
F
3.50±0.10
A
3.10±0.10
A0
2.10±0.10
B
2.75±0.10
B0
0.65±0.10
K
1.10±0.10
t
0.20±0.05
D
Φ178.0±2.0
D2
Φ13.0
W1
9.5
Quantity: 3000PCS
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