MM3Z3V3

MM3Z2V0-MM3Z75 Silicon Planar Zener Diodes PINNING PIN Features • Total power dissipation : max. 300 mW DESCRIPTION 1 Cathode 2 Anode 2 1 • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% SOD-323 Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Value Unit Ptot 300 mW Tj 150 O Tstg - 55 to + 150 O Symbol Max. RθJA 417 VF 0.9 C C Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA www.slkormicro.com 1 Unit C/W O V MM3Z2V0-MM3Z75 Characteristics at Ta = 25 OC Type Marking Code Zener Voltage Range 1) Vznom (V) MM3Z2V0 B0 2.0 MM3Z2V2 C0 2.2 MM3Z2V4 1C 2.4 MM3Z2V7 1D 2.7 MM3Z3V0 1E 3.0 MM3Z3V3 1F 3.3 MM3Z3V6 1H 3.6 MM3Z3V9 1J 3.9 MM3Z4V3 1K 4.3 MM3Z4V7 1M 4.7 MM3Z5V1 1N 5.1 MM3Z5V6 1P 5.6 MM3Z6V2 1R 6.2 MM3Z6V8 1X 6.8 MM3Z7V5 1Y 7.5 MM3Z8V2 1Z 8.2 MM3Z9V1 2A 9.1 MM3Z10 2B 10 MM3Z11 2C 11 MM3Z12 2D 12 MM3Z13 2E 13 MM3Z15 2F 15 MM3Z16 2H 16 MM3Z18 2J 18 MM3Z20 2K 20 MM3Z22 2M 22 MM3Z24 2N 24 MM3Z27 2P 27 MM3Z30 2R 30 MM3Z33 2X 33 MM3Z36 2Y 36 MM3Z39 2Z 39 MM3Z43 3A 43 MM3Z47 3B 47 MM3Z51 3C 51 MM3Z56 3D 56 MM3Z62 3E 62 MM3Z68 3F 68 MM3Z75 3H 75 1) VZT is tested with pulses (20 ms). www.slkormicro.com VZT (V) 1.8...2.15 2.08...2.33 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 Dynamic Impedance at IZT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 2 ZZT Max. ( Ω) 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 100 130 150 180 200 215 240 265 at IZT (mA) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Reverse Leakage Current IR Max. (μA) 120 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR (V) 0.5 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 33 36 39 43 47 52 56 MM3Z2V0-MM3Z75 Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 3V9 2V7 6V8 4V7 3V3 Iz 40 8V2 5V6 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 8 7 9 10 V Vz Breakdown characteristics Tj = constant (pulsed) mA 30 Tj=25 oC 10 12 Iz 15 20 18 22 27 Test current Iz 5mA 10 33 0 0 10 20 30 Vz Power Dissipation: Ptot (mW) 300 200 100 0 0 25 150 100 Ambient Temperature: Ta ( C) O Derating Curve www.slkormicro.com 3 40 V MM3Z2V0-MM3Z75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE A D E www.slkormicro.com bp UNIT A bp C D E HE mm 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 4