WSB5546N-2/TR

WSB5546N WSB5546N 0.2A, Schottky Barrier Diode Http://www.sh-willsemi.com Features  Low reverse current  0.2A Average rectified forward current  Standard products are Pb-free and Halogen-free DFN1006-2L Circuit Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current IO 0.2 A IFSM 3 Peak forward current (1) A TJ 150 O Operating temperature Topr -40 ~ 150 O C Storage temperature Tstg -55 ~ 150 O C Junction temperature C Electronics characteristics (TA=25oC) Parameter Forward voltage Symbol Condition Min. Typ. Max. Unit VF IF=0.2A - 0.51 0.60 V VR=10V - - 0.5 uA VR=40V - - 1 uA (2) Reverse current IR Junction capacitance CJ VR=4V, F=1MHz - 17 - pF Rθ(j-a) Junction to ambient - - 500 K/W Thermal resistance Order Informations Device WSB5546N-2/TR Package Marking DFN1006-2L M* (3) Shipping 10000/Reel&Tape Note 1: Pulse Width=8.3ms, Single half-sine Pulse; Note 2: Pulse Width