WSB5503W-2/TR

WSB5503W WSB5503W Middle Power Schottky Barrier Diode Http://www.sh-willsemi.com Features  1A Average rectified forward current  Low forward voltage  Low leakage current  Small package SOD-323 SOD-323 Circuit Applications  Switching circuit  Middle current rectification Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current IO 1 A IPK 25 A TJ 125 O C C C Peak forward current (1) Junction temperature Operating temperature Topr -40 ~ 85 O Storage temperature Tstg -55 ~ 150 O Electronics characteristics (TA=25oC) Parameter Symbol Condition Min. Typ. Max. Unit Forward voltage VF IF=1A - 0.5 0.57 V Reverse current IR VR=VR - 10 50 uA Junction capacitance CJ VR=4V, F=1MHz - - 120 pF Order Informations Device WSB5503W-2/TR Package *.L SOD-323 Note 1 : Pulse Width=1us, Single Pulse Note 2 : * = Month code (A~Z); . L = Device code Will Semiconductor Ltd. Marking 1 (2) Shipping 3000/Reel&Tape Jan, 2014 - Rev. 1.1 WSB5503W o Typical characteristics (Ta=25 C, unless otherwise noted) 1 1000 o o Ta=85 C Reverse Current: I R (uA) Forward Current: I F (A) Ta=85 C o Ta=25 C 0.1 o Ta=-40 C 0.01 1E-3 0 100 200 300 400 500 600 700 100 o o 1 Ta=-40 C 0.1 0.01 800 Ta=25 C 10 0 Forward Voltage: V F (mV) 15 20 25 30 35 40 Reverse current vs. Reverse voltage 1000 30 F = 1MHz VAC = 50mVrms 25 Capacitance: CJ (pF) Peak Forward Current: I PK (A) 10 Reverse Voltage: V R (V) Forward voltage vs. Forward current 20 15 10 5 0 5 100 10 1 1 10 Time: t (uS) 100 Peak pulse forward current characteristics 0 10 20 Reverse Voltage: V R (V) 30 Junction capacitance vs. Reverse voltage 120 % of Rated Power 100 80 60 40 20 0 0 25 50 75 100 125 TJ-Lead temperature Power Derating Will Semiconductor Ltd. 2 Jan, 2014 - Rev. 1.1 WSB5503W Package outline dimensions SOD-323 Symbol Dimensions in millimeter Min. Typ. Max. A - - 1.000 A1 - - 0.100 A2 0.800 0.850 0.900 b 0.250 0.300 0.350 c 0.080 0.115 0.150 D 1.200 1.300 1.400 E 1.600 1.700 1.800 E1 2.500 2.600 2.700 L L1 Will Semiconductor Ltd. 0.475 (REF) 0.250 0.325 3 0.400 Jan, 2014 - Rev. 1.1