WSB5511M-2/TR

WSB5511M WSB5511M 3A Schottky Barrier Diode Http://www.sh-willsemi.com Features  Low forward voltage  Extremely low thermal resistance  High current capability SMA (DO-214AC) Applications Circuit  Switching circuit  Middle current rectification Marking Absolute maximum ratings Parameter Symbol Value Unit VRRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current (DC) IO 3.0 A IFSM 50 A TJ -55 ~ 150 O C Operating temperature Topr -55 ~ 150 O C Storage temperature Tstg -55 ~ 150 O C Reverse voltage (repetitive peak) Forward Peak Surge Current (1) Junction temperature Electronics characteristics (TA=25oC) Parameter Symbol Condition VF Reverse current Junction capacitance Forward voltage (2) Thermal resistance Min. Typ. Max. Unit IF=3.0A 0.50 V IR VR=40V 0.5 mA CJ VR=4V, F=1MHz 220 pF Rθ(J-L) Junction to Lead (Fig.2) 17 K/W Order Informations Device WSB5511M-2/TR Package Marking SMA (DO-214AC) .EC* (3) Shipping 5000/Reel&Tape Note1: Pulse width=8.3ms, single pulse; Note2: Single Pulse, test Tp=380us; Note3: * =Month code (A~Z); .EC =Device code； Will Semiconductor Ltd. 1 Jul, 2019 - Rev. 1.6 WSB5511M Typical characteristics (Ta=25oC, unless otherwise noted) 100000 o o o +85 C o o 0.1 o o +65 C +25 C o 0C 0.01 1000 Reverse Current(uA) +125 C +85 C 100 o 0C 0.1 o 0.01 1E-3 0.2 o +25 C 1 o 1E-3 0.0 o +65 C 10 -50 C 0.4 0.6 -50 C 5 10 15 Fig.1 Forward voltage vs. Forward current 25 30 35 40 Fig.2 Reverse current vs. Reverse voltage 4 1000 800 Cj(pF) 3 2 1 0 20 Reverse Voltage(V) Forward Voltage(V) Average Forward Current(A) Forward Current(A) 1 +125 C 10000 +150 C 600 400 200 0 25 50 75 100 125 0 150 5 10 15 20 25 Reverse Voltage(V) o Lead temperature( C) Fig.3 Maximum Forward Current Derating Curve Will Semiconductor Ltd. 0 Fig.4 Junction capacitance vs. Reverse voltage 2 Jul, 2019 - Rev. 1.6 WSB5511M Package outline dimensions SMA Dimensions in millimeters Symbol A Min. Max. 1.90 2.50 A1 0.203 MAX D 3.90 4.70 D1 4.75 5.35 E 2.40 2.85 c 0.10 0.31 b 1.27 1.95 L 0.76 1.55 Will Semiconductor Ltd. 3 Jul, 2019 - Rev. 1.6 WSB5511M TAPE AND REEL INFORMATION Reel Dimensions RD Reel Dimensions Tape Dimensions W P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape P1 Pitch between successive cavity centers Pin1 Pin1 Quadrant Will Semiconductor Ltd. User Direction of Feed 7inch 13inch 1 8mm 12mm 16mm 2mm 4mm 8mm Q1 Q2 Q3 4 Q4 Jul, 2019 - Rev. 1.6 WSB5511M 制 修 订 记 修订页次 录 文件版本 制修日期 修订人 变更内容 Rev.1.0 2013/5/21 建立文档 Rev.1.1 2013/7/24 修改 IF=3A Rev.1.2 2013/8/28 修改 VF 和 IR 曲线，Marking Rev.1.3 2013/10/08 修改 VF 与 IR，Cj 曲线 Rev.1.4 2014/01/21 衷世雄 添加 125 度曲线 Rev.1.5 2014/03/17 衷世雄 更换 wafer，相关信息更新 批准 审核 编制 衷世雄 日期 日期 日期 20140527 各部门会签 应用部 Will Semiconductor Ltd. 封装部 市场部 5 生产管理部 Jul, 2019 - Rev. 1.6