WSB5508L-2/TR

WSB5508L WSB5508L Http//:www.willsemi.com Middle Power Schottky Barrier Diode Features  1A Average rectified forward current  Low forward voltage  Low leakage current  SOD-123 package SOD-123 Circuit Applications *L  Switching circuit  Middle current rectification Marking Absolute maximum ratings Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 40 V Reverse voltage (DC) VR 40 V Average rectified forward current IO 1 A IPK 25 A Operating Junction Temperature Topr -55 ~ 150 O C Storage temperature Tstg -55 ~ 150 O C Peak forward current (1) Electronics characteristics (TA=25oC) Parameter Symbol Condition Forward voltage VF Reverse current Min. Typ. Max. Unit IF=1A 0.57 V IR VR=40V 100 uA Junction capacitance CJ VR=4V, F=1MHz Thermal resistance RθJL Junction to lead 105 pF 120 K/W Order Informations Device WSB5508L-2/TR Package Marking SOD-123 *L (2) Shipping 3000/Reel&Tape Note 1: Pulse Width=1us, Single Pulse Note 2: * = Month code (A~Z); L = Device code Will Semiconductor Ltd. 1 Jan, 2016-Rev. 1.2 WSB5508L o Typical characteristics (Ta=25 C, unless otherwise noted) 1000 o -40 C o -25 C o +25 C o +65 C o +85 C +85℃ 100 Reverse Current (uA) Forward Current(A) 1 0.1 0.01 1E-3 0.0 0.2 0.4 +65℃ 10 -25℃ 0.1 -40℃ 0.01 1E-3 0.6 +25℃ 1 5 10 15 20 25 30 35 40 Reverse Voltage (V) Forward Voltage(V) Forward voltage vs. Forward current Reverse current vs. Reverse voltage Peak Forward Current: IPK (A) 30 25 20 15 10 5 0 1 10 Time: t (uS) 100 Peak pulse forward current characteristics Junction capacitance vs. Reverse voltage Average Forward Current(A) 1.5 1.0 0.5 0.0 0 50 100 150 200 o TL( C)-Lead temperature Current Derating Will Semiconductor Ltd. 2 Jan, 2016-Rev. 1.2 WSB5508L Package outline dimensions SOD-123 Symbol Dimensions in millimeters Dimensions in inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.450 0.650 0.018 0.026 c 0.080 0.150 0.003 0.006 D 1.500 1.700 0.059 0.067 E 2.600 2.800 0.102 0.110 E1 3.550 3.850 0.140 0.152 L 0.500 (REF) 0.020 (REF) L1 0.250 0.450 0.010 0.018 θ 0° 8° 0° 8° Land Pattern Recommendation Will Semiconductor Ltd. 3 Jan, 2016-Rev. 1.2