IRF640NPBF

IRF640NPBF N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device PARAMETER VALUE UNIT V Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 Drain Current-Continuous 18 IDM Drain Current-Single Pulsed PD Total Dissipation @TC=25℃ Tj Max. Operating Junction Temperature A ＣＲ Ｏ 　Ｓ ｅｍ ID Tstg V ｉｃ VDSS ｏｎ SYMBOL ｃｔ ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ｄｕ ·DESCRITION · Efficient and reliable device for use in a wide variety of applications ｏｒ performance and reliable operation Storage Temperature 72 A 150 W 175 ℃ -55~175 ℃ ＪＳ ＭＩ ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance MAX UNIT 1 ℃/W 62 ℃/W www.jsmsemi.com 第１／２页 IRF640NPBF N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA 200 VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA 2 RDS(on) Drain-Source On-Resistance VGS=10V; ID=11A IGSS Gate-Source Leakage Current VGS= ±20V IDSS Drain-Source Leakage Current VDS=200V; VGS= 0V VSD Diode forward voltage IF=11A; VGS = 0V TYP ｄｕ UNIT V 4 V 150 mΩ ±0.1 μA 25 μA 1.3 V ＪＳ ＭＩ ＣＲ Ｏ 　Ｓ ｅｍ ｉｃ ｏｎ MAX ｏｒ PARAMETER ｃｔ SYMBOL www.jsmsemi.com 第２／２页