IRF830APBF
550V N-Channnel MOSFET
●Features:
■ 4.0A, 550V, RDS(on)(Typ) =2.2Ω@VGS=10V
■ Low Gate Charge
■ Low Crss
■ 100% Avalanche Tested
■ Fast Switching
■ Improved dv/dt Capability
●Application:
■ High Frequency Switching Mode Power Supply
■ Active Power Factor Correction
to
r
TO-220
1.Gate
uc
co
Drain Current
Drain Current
3.Source (S)
Value
Unit
550
V
- Continuous(Tc=25C)
- Continuous(Tc=100C)
4.0*
A
2.5*
A
-Pulsed
16*
A
±30
V
(Note2)
240
mJ
mi
IDM
Drain-Source Voltage
Se
ID
nd
Absolute Maximum Ratings(Tc=25C unless otherwise noted)
Symbol
Parameter
VDSS
(G)
2.Drain (D)
(Note1)
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note1)
4.0
A
EAR
Repetitive Avalanche Energy
(Note1)
10.0
mJ
Peak Diode Recovery dv/dt
(Note3)
4.5
V/ns
PD
Power Dissipation(TC =25C)
-Derate above 25°C
33
W
0.26
W/C
Operating Junction Temperature
150
C
-55 to+150
C
Max
Unit
JS
Tj
MI
C
dv/dt
RO
VGSS
Tstg
Storage Temperature Range
* Drain Current Limited by Maximum Junction Temperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance,Junction to Case
3.79
C /W
RθJA
Thermal Resistance,Junction to Ambient
62.5
C /W
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第1/5页
IRF830APBF
550V N-Channnel MOSFET
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=550V,VGS=0V
VDS=520V,Tc=125C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
Max
Unit
550
--
--
V
--
0.65
--
V/C
-----
-----
1
10
100
-100
μA
μA
nA
nA
VDS= VGS, ID=250μA
2.0
--
-2.2
4.0
2.6
V
Ω
VGS=10 V, ID=2.0A
VDS=40 V, ID=2.0A
(Note4)
--
3.6
--
S
JS
MI
C
RO
Se
mi
co
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MHz
Reverse Transfer Capacitance
Crss
Switching Characteristics
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
VDD = 325 V, ID = 4.0 A,
RG = 25 Ω (Note4,5)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
VDS = 520 V, ID =4.0 A,
Gate-Source Charge
Qgs
VGS = 10 V (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Drain-Source Diode Forward Voltage VGS =0V,IS=4.0A
VSD
Reverse Recovery Time
trr
VGS =0V, IS=4.0A,
d IF /dt=100A/μs (Note4)
Reverse Recovery Charge
Qrr
----
560
62
10
----
pF
pF
pF
--------
30
75
60
55
12
4.0
4.8
--------
ns
ns
ns
ns
nC
nC
nC
------
---330
2.67
4.0
16
1.4
---
A
A
V
ns
μC
r
IDSS
ID=250μA
(Referenced to 25C)
Typ
uc
Breakdown Voltage Temperature
Coefficient
nd
△BVDSS
/△TJ
Min
to
Electrical Characteristics(Tc=25C unless otherwise noted)
Symbol
Parameter
Test Conditons
Off Characteristics
BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA
Notes:
1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature.
2、L = 25.0mH, IAS =4.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C.
3、ISD≤4.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C.
4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%.
5、Essentially Independent of Operating Temperature.
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第2/5页
IRF830APBF
550V N-Channnel MOSFET
Transfer Characteristics
nd
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
MI
C
RO
Se
mi
co
On-Resistance Variation vs.
Drain Current and Gate Voltage
uc
to
r
On-Regin Characteristics
Gate Charge Characteristics
JS
Capacitance Characteristics
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第3/5页
IRF830APBF
550V N-Channnel MOSFET
On-Resistance Variation
vs. Temperature
co
Maximum Drain Current
Vs. Case Temperature
JS
MI
C
RO
Se
mi
Maximum Safe Operating Area
nd
uc
to
r
Breakdown Voltage Variation
vs. Temperature
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第4/5页
IRF830APBF
550V N-Channnel MOSFET
JS
M
IC
RO
S
em
ic
on
du
ct
or
TO-220 Package Dimensions
Symbol
W
W1
W2
W3
*
W4
Size
Min
Max
9.66
10.28
2.54(TYP)
0.70
0.95
1.17
1.37
1.32
1.72
Unit: mm
Symbol
W5
L
L1
L2
L3
Size
Min
9.80
9.00
6.40
2.70
12.70
Max
10.20
9.40
6.80
2.90
14.27
Symbol
L4**
L5
T
T1
T2
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Size
Min
6.20
2.79
4.30
1.15
2.20
Max
6.60
3.30
4.70
1.40
2.60
Symbol
T3
G(Φ)
Size
Min
0.45
3.50
Max
0.60
3.70
第5/5页
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