IRFR5505

IRFR5505/IRFU5505 P-Channel 60 V (D-S) MOSFET 描述 / Descriptions P 沟道 TO-252 / TO-251塑封封装场效应管。 特征 ｎｄ ｕｃ ｔｏ ｒ P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features 大电流输出能力。无卤产品。 High Current Capability. HF Product. 用途 I-P a k TO -2 5 1 A A D -P a k T O -2 52 A A S / Applications 交流负载开关，蓄电池充电/放电保护。 / Absolute Maximum Ratings(Ta=25℃) D 符号 Symbol 数值 Rating 单位 Unit VDSS -60 V ID(Tc=25℃) -20 A IDM -80 A VGS ±20 V Avalanche Current IAS 13.8 A Avalanche energy L=0.5mH EAS 65 mJ PD(Tc=25℃) 20 W PD(Tc=100℃) 10 W Tj，Tstg -55～150 ℃ Drain Current Drain Current - Pulsed ＭＩ ＣＲ Gate-Source Voltage Ｏ　 Drain-Source Voltage Ｓｅ 参数 Parameter ｍｉ 极限参数 ｃｏ AC-in load switch,Battery protection charge/discharge. ＪＳ Power Dissipation Junction and Storage Temperature Range Maximum Junction-to-Ambient t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case Steady-State RθJA 30 60 RθJC www.jsmsemi.com ℃/W 7.5 第１／５页 IRFR5505/IRFU5505 P-Channel 60V (D-S) MOSFET 电性能参数 / Electrical Characteristics(Ta=25℃) 符号 Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Forward IGSS 测试条件 Test Conditions VGS=0V ID=-250μA VDS=-60V VGS=0V VDS=-60V TJ=55°C VGS=0V VGS=±20V VDS=0V 最小值 典型值 最大值 Min Typ Max -60 V -1.0 μA -5.0 μA ±0.1 μA -1.7 -2.5 V VGS(th) VDS=VGS ID=250μA Static Drain-Source On-Resistance RDS(on)1 VGS=-10V ID=-20A 87 92 mΩ RDS(on)2 VGS=-4.5V ID=-10A 98 102 mΩ -0.7 -1.2 V VSD 符号 Symbol Ciss Output Capacitance Coss Rg ＣＲ Total Gate Charge Total Gate Charge VDS=-25V f=1.0MHz VGS=0V f=1MHz 330 VDS=0V VGS=-10V ID=-12A VDS=-30V 3.8 Qgd 1.9 Turn-On Delay Time td(on) 4.2 Turn-On Rise Time tr Turn-Off Delay Time td(off) ＭＩ Gate Drain Charge ＪＳ Ω 7.5 Qgs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge pF 6.4 Gate Source Charge Turn-Off Fall Time 单位 Unit 205 Qg(10V) Qg(4.5V) 最小值 典型值 最大值 Min Typ Max 1650 VGS=0V Crss Ｏ　 Reverse Transfer Capacitance VGS=0V 测试条件 Test Conditions Ｓｅ Input Capacitance Gate resistance IS=-1A ｍｉ 参数 Parameter ｃｏ Gate Threshold Voltage Diode Forward Voltage -1 单位 Unit -70 ｎｄ ｕｃ ｔｏ ｒ 参数 Parameter VGS=-10V RL=2.5Ω 1.2 VDS=-30V RGEN=3Ω tf 3.4 16 nC ns 2 trr Qrr IF=-12A dI/dt=500A/ms IF=-12A dI/dt=500A/ms www.jsmsemi.com 27 ns 30 nC 第２／５页 IRFR5505/IRFU5505 P-Channel 60V (D-S) MOSFET / Electrical Characteristic Curve ＪＳ ＭＩ ＣＲ Ｏ　 Ｓｅ ｍｉ ｃｏ ｎｄ ｕｃ ｔｏ ｒ 电参数曲线图 www.jsmsemi.com 第３／５页 IRFR5505/IRFU5505 P-Channel 60V (D-S) MOSFET Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) ｎｄ ｕｃ ｔｏ ｒ 2.38 (.094) 2.19 (.086) 6.73 (.265) 6.35 (.250) -A1.27 (.050) 0.88 (.035) 5.46 (.215) 5.21 (.205) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 4 6.45 (.245) 5.68 (.224) 6.22 (.245) 5.97 (.235) 1.02 (.040) 1.64 (.025) 1 2 10.42 (.410) 9.40 (.370) 3 0.51 (.020) MIN. 3X 1.14 (.045) 0.76 (.030) 0.89 (.035) 0.64 (.025) 0.25 ( .010) M A M B 2 - DRA IN 3 - S OUR CE 4 - DRA IN 0.58 (.023) 0.46 (.018) ｍｉ 2X ｃｏ -B 1.52 (.060) 1.15 (.045) LEA D AS SIG NME NT S 1 - G AT E NOT ES: 2.28 (.090) 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS ION : INCH. 3 CO NFO RMS T O JEDE C O UTLINE TO -252AA . 4 DIME NSIO NS S HO W N ARE BEF O RE SO LD ER DIP , SO LDER DIP MA X. +0.16 (.006). Ｏ　 Ｓｅ 4.57 (.180) ＣＲ Part Marking Information ＭＩ TO-252AA (D-Pak) E X A M P LE : T H IS IS A N IR F R 5 5 0 5 W IT H A S S E MB L Y LOT C OD E 2101 ＪＳ P A R T N U MB E R IR F R5505 C H N 2101 Made in www.jsmsemi.com A S S E MB L Y L O T C OD E 第４／５页 IRFR5505/IRFU5505 P-Channel 60 V (D-S) MOSFET Package Outline ｎｄ ｕｃ ｔｏ ｒ TO-251AA Outline Dimensions are shown in millimeters (inches) 6.73 (.265) 6.35 (.250) 2.38 (.094) 2.19 (.086) -A- 0.58 (.023) 0.46 (.018) 1.27 ( .050) 0.88 ( .035) 5.46 (.215) 5.21 (.205) LEAD AS SIG NMENT S 4 1 - G AT E 2 - DRA IN 6.45 (.245) 5.68 (.224) 6.22 ( .245) 5.97 ( .235) 1.52 ( .060) 1.15 ( .045) 1 2 3 -B - ｃｏ NOT ES : 1 DIME NSIO NING & T OLE RANCING P ER A NSI Y14.5M, 1982. 2.28 (.090) 1.91 (.075) 2 CO NTRO LLIN G DIMENS ION : INCH. 3 CO NFO RMS TO J EDE C O UT LINE TO -252AA . 1.14 (.045) 0.76 (.030) 3X ｍｉ 9.65 (.380) 8.89 (.350) 0.25 (.010) 2.28 (.090) M A M B 0.58 (.023) 0.46 (.018) Ｏ　 2X 4 DIME NSIO NS SHOW N A RE BEF O RE SO LDER DIP , SO LDER DIP MA X. +0.16 (.006). 1.14 (.045) 0.89 (.035) 0.89 (.035) 0.64 (.025) Ｓｅ 3X 3 - S OURCE 4 - DRA IN ＣＲ Part Marking Information ＭＩ TO-251AA (I-Pak) ＪＳ E X A M P LE : TH IS IS A N IR F U5505 W IT H A S S E M B LY LO T C O D E 2103 P A R T N UM B E R IR F U5505 CHN 2103 Made in A S S E MB L Y L O T C OD E www.jsmsemi.com 第５／５页