IRFZ44N-B

IRFZ44N-B N-Channel MOSFET Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 31nC (Typ.). BVDSS=60V,ID=50A TO-220 ｒ RDS(on) : 22mΩ (Max) @VG=10V ｔｏ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings* ｃｏ ｎｄ ｕｃ □ □ □ □ □ □ □ (Tc=25℃ unless otherwise noted) Parameter VDSS Drain-Source Voltage Ｓｅ ｍｉ Symbol IAR PD Tstg TL V 50 TC=100℃ 35.4 A Gate Threshold Voltage ±25 V Single Pulse Avalanche Energy (note1) 490 mJ Avalanche Current (note2) 50 A Power Dissipation (Tc=25℃) 120 W Junction Temperature(MAX) 150 Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds -55~+150 ＪＳ ＭＩ Tj 60 TC=25℃ ＣＲ Ｏ　 EAS Unit Drain Current ID VGSS Value ℃ 300 Thermal Characteristics Symbol Parameter Typ. MAX. RθJC Thermal Resistance,Junction to Case - 1.24 RθJA Thermal Resistance,Junction to Ambient - 62.5 RθCS Thermal Resistance,Case to Sink - 0.5 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Unit ℃/W 第１／７页 IRFZ44N-B N-Channel MOSFET Electrical Characteristics Tc=25℃ unless other wise noted Symbol Parameter Test Condition Min. Typ. Max Units -- -- V Off Characteristics Drain-Sourse Breakdown Voltage ID=250μA，VGS=0 △BVDSS/ △TJ Breakdown Voltage Temperature Conficient ID=250μA,Reference to 25℃ -- 0.06 -- V/℃ IDSS Zero Gate Voltage Drain Current Vds=60V, Vgs=0V -- -- 1 μA 10 μA ｒ 60 BVDSS 100 nA  -- -100 nA  2 -- 4 V -- -- 0.022 Ω -- 1180 1540 pF -- 440 580 pF -- 65 90 pF -- 15 40 nS -- 105 220 nS 60 130 nS -- 65 140 nS -- 31 41 nC -- 8 -- IGSSR Gate-body leakage Current,Reverse Vgs=+25V, Vds=0V -- Vgs=-25V, Vds=0V On Characteristics  Date Threshold Voltage Id=250uA,Vds=Vgs RDS(on) Static Drain-Sourse On-Resistance Id=25A,Vgs=10V -- ｃｏ ｎｄ VGS(th) -- ｔｏ Gate-body leakage Current,Forward ｕｃ IGSSF Vds=48V, Tc=125 ℃ Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=25V，VGS=0， f=1.0MHz Ｓｅ Ciss ｍｉ Dynamic Characteristics ＣＲ Ｏ　 Switching Characteristics  Td(on) Turn-On Delay Time Tr Turn-On Rise Time Td(off) Turn-Off Delay Time Turn-Off Fall Time Qg Total Gate Charge ＪＳ ＭＩ Tf Qgs Gate-Sourse Charge Qgd Gate-Drain Charge VDD=250V，ID=25A RG=25Ω (Note 3,4) VDS=400,VGS=10V， ID=25A (Note 3,4) -- nC 13 -- nC -- 50 A 200 A Drain-Sourse Diode Characteristics and Maximum Ratings IS Maximun Continuous Drain-Sourse Diode Forward Current ISM Maximun Plused Drain-Sourse DiodeForwad Current VSD Drain-Sourse Diode Forward Voltage trr Qrr *Notes Reverse Recovery Time Reverse Recovery Charge --- -- Id=25A -- -- 1.5 V IS=25A,VGS =0V diF/dt=100A/μs (Note3) -- 52 -- nS 75 -- μC -- 1, L=9.3mH, IAS=50A, VDD=50V, RG=25Ω, Starting TJ =25°C  2, Repetitive Rating : Pulse width limited by maximum junction temperature 3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2% 4, Essentially Independent of Operating Temperature  ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／７页 IRFZ44N-B N-Channel MOSFET Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 1 10 1 10 ｒ ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 175℃ 0 ｔｏ 25℃ ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 30V 2. 250μ s Pulse Test -55℃ 10 0 0 10 1 10 2 10 4 Figure 2. Transfer Characteristics 0.05 2 ｃｏ VGS = 10V ｍｉ VGS = 20V IDR, Reverse Drain Current [A] 0.04 1 10 0.02 0.01 Ｓｅ R DS(ON) [ Ω ], 10 Drain-Source On-Resistance 10 ｎｄ Figure 1. On-Region Characteristics ※ Note : TJ = 25℃ 0.00 0 50 100 150 200 0 ＣＲ Ｏ　 0.2 10 Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1500 1000 Crss 500 V GS , Gate-Source Voltage [V] Coss 0.8 1.0 1.2 1.4 1.6 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ＪＳ ＭＩ 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2500 2000 0.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ 175℃ 10 ID, Drain Current [A] Capacitance [pF] 8 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] 0.03 6 ｕｃ -1 10 VDS = 30V VDS = 48V 8 6 4 2 ※ Note : ID = 50A 0 0 -1 10 0 0 10 5 10 15 20 25 30 35 1 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／７页 IRFZ44N-B N-Channel MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.5 1.0 0.8 -100 -50 0 50 100 0.5 150 ※ Notes : 1. VGS = 10 V 2. ID = 25 A 0.0 -100 200 -50 150 200 Figure 8. On-Resistance Variation vs. Temperature 3 60 ｃｏ Operation in This Area is Limited by R DS(on) 100μ s 2 ｍｉ 1 ms 10 ms DC 1 ※ Notes : o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 10 -1 10 0 1 10 10 40 30 20 10 0 25 2 ＣＲ Ｏ　 10 ID , Drain Current [A] 50 Ｓｅ ID , Drain Current [A] 100 ｎｄ Figure 7. Breakdown Voltage Variation vs. Temperature 10 50 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 0 o o 10 ｔｏ 0.9 ｒ 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A ｕｃ BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 50 VDS, Drain-Source Voltage [V] 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature 0 D = 0 .5 ※ N otes : 1 . Z θ J C( t ) = 1 . 2 4 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 .1 10 -1 0 .0 5 PDM 0 .0 2 JC ＪＳ ＭＩ (t), T h e rm a l R e s p o n s e Figure 9. Maximum Safe Operating Area 10 75 TC, Case Temperature [℃] t1 0 .0 1 t2 Z θ s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第４／７页 IRFZ44N-B N-Channel MOSFET Typical Characteristics (Continued) Gate Charge Test Circuit & Waveform ｔｏ Qg 10V 300nF VDS VGS Qgs ｎｄ DUT Qgd ｕｃ 50KΩ 200nF 12V ｒ VGS Same Type as DUT ｃｏ 3mA Charge RL Ｓｅ VDS ｍｉ Resistive Switching Test Circuit & Waveforms ＣＲ Ｏ　 ＪＳ ＭＩ 10% VGS DUT td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V 90% VDD VGS RG 10V VDS ID (t) VDS (t) VDD tp tp ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Time 第５／７页 IRFZ44N-B N-Channel MOSFET Typical Characteristics (Continued) ｏｒ Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT ｃｔ VDS I SD Driver RG ｉｃ Same Type as DUT ｏｎ L ｄｕ _ VGS VDD ＭＩ ＣＲ Ｏ VGS ( Driver ) 　Ｓ ｅｍ • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current ＪＳ I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第６／７页 IRFZ44N-B N-Channel MOSFET TO-220AB ＪＳ ＭＩ ＣＲ Ｏ　 Ｓｅ ｍｉ ｃｏ ｎｄ ｕｃ ｔｏ ｒ Unit: mm Symbol W W1 W2 W3 * W4 Size Min Max 9.66 10.28 2.54（TYP） 0.70 0.95 1.17 1.37 1.32 1.72 Symbol W5 L L1 L2 L3 Size Min 9.80 9.00 6.40 2.70 12.70 Max 10.20 9.40 6.80 2.90 14.27 Symbol L4** L5 T T1 T2 ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ Size Min 6.20 2.79 4.30 1.15 2.20 Max 6.60 3.30 4.70 1.40 2.60 Symbol T3 G(Φ) Size Min 0.45 3.50 Max 0.60 3.70 第７／７页