MM1Z30BW

MM1Z2V0BW THRU MM1Z75BW Silicon Planar Zener Diodes FEATURES PINNING • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitaBWle for surface mounted design. PIN DESCRIPTION 1 2 • Tolerance approximately±2% Cathode Anode 2 MECHANICAL DATA ▪ Case: SOD-123 1 ▪ Approx. Weight:16mg/0.00056oz ｃｔ ｏｒ Simplified outline SOD-123 and symBWol ｄｕ ABWsolute Maximum Ratings And Characteristics （Ta = 25 °C） SymBW ol Value Unit Ptot 500 mW VF 0.9 V RθJA 340 Tj, Tstg -55 ~ +150 °C/W ｏｎ Parameter Power Dissipation ｉｃ Forward Voltage at IF = 10 mA ｅｍ Typical thermal resistance juncting to amBWient (1) Operating and Storage Temperature Range °C ＣＲ Ｏ 　Ｓ (1) Thermal resistance from junction to amBWient at P.C.BW. mounted with 2.0" X 2.0" (5 X 5 cm) copper areas pads. 0.6 Power Dissipation (W) ＪＳ ＭＩ 0.5 0.4 0.3 0.2 0.1 0.0 25 50 75 100 125 150 Tc ,Case Temperature (°C) 175 Fig.2 Typical Transient Thermal Impedance Transient Thermal Impedance（°C/W） Fig.1 Maximum Continuous Power Derating 2000 1000 100 10 0.01 0.1 1 10 100 t, Pulse Duration（sec） ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第１／３页 MM1Z2V0BW THRU MM1Z75BW Silicon Planar Zener Diodes Characteristics at Ta = 25°C Dynamic Impedance Zener Voltage Range （1） Type VZT（at IZT） Marking ZT ZZT（at IZT） I Reverse Current R I at V R Min（V） Nom（V） Max（V） (mA) Max (Ω) Max（μA） （V） 4A 1.96 2 2.04 5 100 120 0.5 MM1Z2V2BW 4BW 2.16 2.2 2.24 5 100 120 0.7 MM1Z2V4BW 4C 2.35 2.4 2.45 5 100 120 1 MM1Z2V7BW 4D 2.65 2.7 2.75 5 110 120 1 MM1Z3V0BW 4E 2.94 3 3.06 5 120 50 1 MM1Z3V3BW 4F 3.23 3.3 3.37 5 130 MM1Z3V6BW 4H 3.53 3.6 3.67 5 130 MM1Z3V9BW 4J 3.82 3.9 3.98 5 130 MM1Z4V3BW 4K 4.21 4.3 4.39 5 130 MM1Z4V7BW 4M 4.61 4.7 4.79 5 130 MM1Z5V1BW 4N 5 5.1 5.20 5 MM1Z5V6BW 4P 5.49 5.6 5.71 5 MM1Z6V2BW 4R 6.08 6.2 6.32 5 MM1Z6V8BW 4X 6.66 6.8 6.94 MM1Z7V5BW 4Y 7.35 7.5 7.65 MM1Z8V2BW 4Z 8.04 8.2 8.36 5 MM1Z9V1BW 5A 8.92 9.1 9.28 MM1Z10BW 5BW 9.8 10 MM1Z11BW 5C 10.78 11 MM1Z12BW 5D 11.76 12 MM1Z13BW 5E 12.74 MM1Z15BW 5F 14.7 MM1Z16BW 5H 15.68 MM1Z18BW 5J MM1Z20BW 5K MM1Z22BW 5M ｏｒ MM1Z2V0BW 1 10 1 5 1 5 1 2 1 130 2 1.5 80 1 2.5 50 1 3 5 30 0.5 3.5 5 30 0.5 4 30 0.5 5 5 30 0.5 6 10.2 5 30 0.1 7 11.22 5 30 0.1 8 12.24 5 35 0.1 9 13 13.26 5 35 0.1 10 15 15.3 5 40 0.1 11 ｄｕ ｏｎ ｉｃ ｅｍ 　Ｓ ｃｔ 20 16.32 5 40 0.1 12 18 18.36 5 45 0.1 13 19.6 20 20.4 5 50 0.1 15 21.56 22 22.44 5 55 0.1 17 ＪＳ ＭＩ ＣＲ Ｏ 16 17.64 MM1Z24BW 5N 23.52 24 24.48 5 60 0.1 19 MM1Z27BW 5P 26.46 27 27.54 5 70 0.1 21 MM1Z30BW 5R 29.4 30 30.6 5 80 0.1 23 MM1Z33BW 5X 32.34 33 33.66 5 80 0.1 25 MM1Z36BW 5Y 35.28 36 36.72 5 90 0.1 27 MM1Z39BW 5Z 38.22 39 39.78 2.5 100 2 30 MM1Z43BW 6A 42.14 43 43.86 2.5 130 2 33 MM1Z47BW 6BW 46.06 47 47.94 2.5 150 2 36 MM1Z51BW 6C 49.98 51 52.02 2.5 180 1 39 MM1Z56BW 6D 54.88 56 57.12 2.5 180 1 43 MM1Z62BW 6E 60.76 62 63.24 2.5 200 0.2 47 MM1Z68BW 6F 66.64 68 69.36 2.5 250 0.2 52 MM1Z75BW 6H 73.5 75 76.5 2.5 300 0.2 57 （1） VZT is tested with pulses (20 ms) ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第２／３页 MM1Z2V0BW THRU MM1Z75BW Silicon Planar Zener Diodes PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 A ｃｔ ｏｒ D B W E ｄｕ A1 C ∠ALL ROUND ｏｎ L1 1.3 min 0.9 D E SOD-123 mechanical data E1 L1 BW 0.22 1.8 2.8 3.9 0.45 0.7 0.09 1.5 2.5 3.6 0.25 0.5 max 51 8.7 71 110 154 18 28 min 35 3.5 59 98 142 10 20 A1 ∠ 0.2 8 9° The recommended mounting pad size 1.2 (47) 2.0 (79) 1.2 (47) 1.2 (47) ＪＳ ＭＩ ＣＲ Ｏ mil max 　Ｓ mm C ｅｍ A UNIT ｉｃ E1 Unit： mm (mil) ｗｗｗ．ｊｓｍｓｅｍｉ．ｃｏｍ 第３／３页