UAD8C05L01
ElectroStatic Discharged Protection Devices (ESD) Data Sheet
Description
The UAD8C05L01 includes back-to-back TVS diodes fabricated in
a proprietary silicon avalanche technology to provide protection for
electronic equipment that may experience destructive electrostatic
discharge (ESD). These robust diodes can safely absorb repetitive
ESD strikes up to the maximum level specified in the IEC61000-4-2
international standard without performance degradation.
The back-to-back configuration provides symmetrical ESD protection
for data lines when AC signals are present.
Features
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IEC61000-4-2 ESD 20KV Air, 20KV contact compliance
SOD882 surface mount package
Working voltage: 5V
Low leakage current
Low operating and clamping voltages
Lead Free/RoHS compliant
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Marking: B1
1
2
Applications
Pin Configuration
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USB 3.0/USB 2.0
MHL/MIPI/MDDI
HDMI, Video Port, eSATA
Set Top Boxes, Game Consoles
Smart Phones
External Storage
Ultrabooks, Notebooks
Tablets, eReaders
Maximum Ratings
Rating
Symbol
ESD voltage (Contact discharge)
Value
Unit
±20
VESD
ESD voltage (Air discharge)
Storage & operating temperature range
Revision:ESD-UAD8C05L01-001(A3)
kV
±20
TSTG ,TJ
1/4
-55~+150
℃
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UAD8C05L01
Electrical Characteristics (TJ=25℃)
Parameter
Symbol
Reverse stand-off voltage
Condition
Min.
Typ.
Max.
Unit
5
V
VRWM
Reverse breakdown voltage
VBR
IBR=1mA
7
V
Reverse leakage current
IR
VR=5V
Clamping voltage (tp=8/20μs)
VC
IPP=1A
13
V
Clamping voltage (tp=8/20μs)
VC
IPP=3A
20
V
Peak pulse current (tp=8/20μs)
IPP
Off state junction capacitance
CJ
μA
1
3
0Vdc,f=1MHz
A
0.4
pF
Typical Characteristics Curves
Figure 2. Insertion Loss (S21) I/O to GND
1
5
0.9
0
0.8
-5
0.7
Attenuation (dB)
Capacitance (pF)
Figure 1. Capacitance vs. Bias Voltage
0.6
0.5
0.4
0.3
-15
-20
-25
0.2
-30
0.1
-35
0
0
1
2
3
4
-40
5
10
DC Bias (V)
Figure 3. Pulse Waveform
110
100
tr
Peak value Ipp
Waveform
Parameters:
tr=8µs
td=20µs
90
80
70
60
50
40
td=t|PP/2
30
20
10
0
0
5
10
100
1000
Frequency (MHz)
Figure 4. Transmission Line Pulsing (TLP) Plot
TLP Current (A)
% of Peak Power Current
-10
15
20
25
30
Time (μs)
Revision:ESD-UAD8C05L01-001(A3)
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-25 -20 -15 -10 -5
0
5
10
15
20
25
TLP Voltage (V)
2/4
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UAD8C05L01
Recommended Soldering Conditions
Reflow Soldering
Critical Zone
TL to TP
tP
TP
Ramp-up
TL
tL
Temperature
TS max
TS min
Ramp-down
tS
Preheat
25
t 25℃ to Peak
Time
Recommended Conditions
Profile Feature
Pb-Free Assembly
Average ramp-up rate (TL to TP)
3℃/second max.
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (tS)
150℃
200℃
60-180 seconds
TS max to TL
-Ramp-up Rate
3℃/second max.
Time maintained above:
-Temperature (TL)
-Time (tL)
217℃
60-150 seconds
Peak Temperature (TP)
260℃
Time within 5℃ of actual Peak Temperature (tP)
Ramp-down Rate
6℃/second max.
Time 25℃ to Peak Temperature
Revision:ESD-UAD8C05L01-001(A3)
20-40 seconds
8 minutes max.
3/4
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UAD8C05L01
Dimensions (SOD882)
Dimension (mm)
A
Symbol
B
C
Side View
Top View
D
E
0.30
0.60
0.05
Recommended Soldering Pad Layout
Bottom View
Min.
Max.
Min.
Max.
A
0.95
1.05
0.037
0.041
B
0.55
0.65
0.022
0.026
C
0.32
0.55
0.013
0.022
D
1.40
0.125
Inches
0.55
F
45°
Millimeters
0.45
0.018
E
0.20
0.30
0.008
0.012
F
0.45
0.55
0.018
0.022
Packaging
Tape
P0
P1
P2
K
B
W
F
E
øD0
øD1
t
A
Symbol
Dimension (mm)
W
8.00±0.30
P0
4.00±0.10
P1
2.00±0.10
P2
2.00±0.10
D0
Φ1.55±0.10
D1
Φ0.40±0.05
E
1.75±0.10
F
3.50±0.10
A
0.75±0.10
B
1.15±0.10
K
0.60±0.05
t
0.20±0.05
D
Φ178.0±2.0
D2
Φ13.00.
W1
9.50
Reel
D2
D
Revision:ESD-UAD8C05L01-001(A3)
W1
Quantity: 10000PCS
4/4
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