UBT23A05L02
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
This is ultra low capacitance TVS arrays designed to protect high
speed data interfaces. It has been specifically designed to protect
sensitive components which is connected to high-speed data and
transmission lines from overvoltage caused by electrostatic (ESD),
cable discharge events (CDE) and electrical fast transients (EFT).
Features
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IEC61000-4-2 ESD 15KV Air, 8KV contact compliance
SOT-23 surface mount package
Protects two high speed data lines
Working voltage: 5V
Ultra low capacitance and clamping voltages
Low leakage current
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
Marking: B 5U
3
1
Pin Configuration
Applications
●
●
●
●
2
HDMI interface protection
Mobile display digital interface
RF/Antenna circuits
USB 2.0 & Firewire ports
● GaAs photodetector protection
● HBT power Amp protection
● Infiniband transceiver protection
Maximum Ratings
Rating
Symbol
ESD voltage (Contact discharge)
Value
Unit
±8
VESD
ESD voltage (Air discharge)
Storage & operating temperature range
Revision:ESD-UBT23A05L02-001(A2)
kV
±15
TSTG ,TJ
1/5
-55~+150
℃
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UBT23A05L02
Electrical Characteristics (TJ=25℃)
Parameter
Symbol
Reverse stand-off voltage
Condition
Min.
Typ.
Max.
Unit
5
V
VRWM
Reverse breakdown voltage
VBR
IBR=1mA
6
V
Reverse leakage current
IR
VR=5V
Each I/O pin
0.5
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
9.8
V
Clamping voltage (tp=8/20μs)
VC
IPP=3A
15
V
Peak pulse current (tp=8/20μs)
IPP
4
A
Off state junction capacitance
CJ
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
0Vdc,f=1MHz
Between I/O pins
0.8
pF
0.4
pF
Typical Characteristics Curves
Figure 1. Pulse Waveforms
tr
5
Peak value Ipp
Waveform
Parameters:
tr=8µs
td=20µs
90
80
F=1MHz
Junction Capacitance (pF)
% of Peak Power Current
110
100
Figure 2. Capacitance vs. Reverse Voltage
70
60
50
40
30
td=t|IPP/2
20
4
3
2
1
10
0
0
0
5
10
15
20
25
30
0
1
2
3
4
5
Reverse Voltage (V)
t-Time (μs)
Figure 3. Clamping Voltage vs. Peak Pulse Current
Clamping Voltage (V)
25
20
15
10
Waveform
Parameters:
tr=8µs
tb=20µs
5
0
0
1
2
3
4
5
6
IPP-Peak Pulse Current (A)
Revision:ESD-UBT23A05L02-001(A2)
2/5
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UBT23A05L02
Applications Information
USB 2.0
USB PORT
Vbus
Vbus
SDD32A05L01
SDD32A05L01
D+
D+
D-
D2
1
GND
GND
2
1
USB
CONTROLLER
3
Vbus
SDD32A05L01
3
D+
D2
1
GND
3
USB3.0
PTC
SMD1812P110TF
SMD0805P110TF
Vbus
D+
DSSTX+
Device IC
SSTXSSRX+
SSRXGND
2
1
2
1
2
1
SDD32A05L01
3
Revision:ESD-UBT23A05L02-001(A2)
3
3/5
3
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UBT23A05L02
Recommended Soldering Conditions
Reflow Soldering
Critical Zone
TL to TP
tP
TP
Ramp-up
TL
tL
Temperature
TS max
TS min
Ramp-down
tS
Preheat
25
t 25℃ to Peak
Time
Recommended Conditions
Profile Feature
Pb-Free Assembly
Average ramp-up rate (TL to TP)
3℃/second max.
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (ts)
150℃
200℃
60-180 seconds
TS max to TL
-Ramp-up Rate
3℃/second max.
Time maintained above:
-Temperature (TL)
-Time (tL)
217℃
60-150 seconds
Peak Temperature (TP)
260℃
Time within 5℃ of actual Peak Temperature (tP)
Ramp-down Rate
6℃/second max.
Time 25℃ to Peak Temperature
Revision:ESD-UBT23A05L02-001(A2)
20-40 seconds
8 minutes max.
4/5
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UBT23A05L02
Dimensions(SOT-23)
E
F
G
2
Dimension
A
Symbol
1
B
C
H I
3
J
D
0.8
(3X)
0.9
(3X)
1.9
1.8
0.95
Recommended Soldering Pad Layout
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.08
0.18
0.003
0.007
B
0.15
-
0.006
-
C
-
0.13
-
0.005
D
0.89
1.09
0.035
0.043
E
2.80
3.05
0.110
0.120
F
1.90
0.075
G
0.95
0.037
H
1.19
1.40
0.047
0.055
I
2.10
2.49
0.083
0.098
J
0.35
0.50
0.014
0.020
Packaging
Tape
P1
P2
K
F
B
W
E
øD0
P0
B0
A0
øD1
t
A
Reel
D2
D
Revision:ESD-UBT23A05L02-001(A2)
W1
Symbol
Dimension (mm)
W
8.00±0.30
P0
4.00±0.10
P1
4.00±0.10
P2
2.00±0.10
D0
Φ1.55±0.10
D1
Φ1.00±0.05
E
1.75±0.10
F
3.50±0.10
A
3.10±0.10
A0
2.10±0.10
B
2.75±0.10
B0
0.65±0.10
K
1.10±0.10
t
0.20±0.05
D
Φ178.0±2.0
D2
Φ13.0
W1
9.5
Quantity: 3000PCS
5/5
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