UDT23AXXL02 SERIES
Electrostatic Discharged Protection Devices (ESD) Data Sheet
Description
Brightking’s UDT23AXXL02 series are ultra low capacitance TVS
arrays designed to protect high speed data interfaces. This series
has been specifically designed to protect sensitive components
which are connected to high-speed data and transmission lines
from overvoltage caused by electrostatic discharge (ESD), cable
discharge events(CDE) and electrical fast transients(EFT).The series
has a typical capacitance of only 0.8pF. This means it can be used
on circuits operating in excess of 3GHz without signal attenuation.
Features
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IEC61000-4-2 ESD 30KV Air, 30KV contact compliance
SOT-23 surface mount package
Protects two high speed data line
Peak power dissipation of 400W under 8/20μs waveform
Working voltage: 3.3V, 5V, 12V, 15V and 24V
Low leakage current
Ultra low capacitance and clamping voltage
Solid-state silicon avalanche technology
Lead Free/RoHS compliant
Solder reflow temperature: Pure Tin-Sn, 260~270℃
Flammability rating UL 94V-0
Meets MSL level 1, per J-STD-020
3
1
2
Pin Configuration
Applications
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HDMI interface protection
Mobile display digital interface
RF/Antenna circuits
USB 2.0 & Firewire ports
● GaAs photodetector protection
● HBT power Amp protection
● Infiniband transceiver protection
Maximum Ratings
Rating
Symbol
Value
Unit
PPP
400
W
Peak pulse power (tp=8/20μs waveform)
ESD voltage (Contact discharge)
±30
VESD
ESD voltage (Air discharge)
Storage & operating temperature range
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
kV
±30
TSTG ,TJ
1/6
-55~+150
℃
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UDT23AXXL02 SERIES
Electrical Characteristics (TJ=25℃)
UDT23A03L02 (Marking: B LSC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Symbol
Condition
Min.
Typ.
VRWM
VBR
IBR=1mA
VR=3.3V
each I/O pin
Reverse leakage current
IR
Clamping voltage (tp=8/20μs)
VC
Peak Pulse Current (tp=8/20μs)
IPP
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
Symbol
Condition
Max.
Unit
3.3
V
4
V
IPP=1A
20
μA
10
V
19
A
0.8
pF
UDT23A05L02 (Marking: B LTC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Min.
Typ.
VRWM
VBR
IBR=1mA
VR=5V
each I/O pin
IPP=1A
Reverse leakage current
IR
Clamping voltage (tp=8/20μs)
VC
Peak Pulse Current (tp=8/20μs)
IPP
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
Symbol
Condition
Max.
Unit
5
V
6
V
5
μA
12
V
17
A
0.8
pF
UDT23A12L02 (Marking: B LUC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Min.
Typ.
VRWM
VBR
IBR=1mA
VR=12V
each I/O pin
IPP=1A
Reverse leakage current
IR
Clamping voltage (tp=8/20μs)
VC
Peak Pulse Current (tp=8/20μs)
IPP
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
Symbol
Condition
Max.
Unit
12
V
13.3
V
1
μA
25
V
10
A
0.8
pF
UDT23A15L02 (Marking: B LWC)
Parameter
Reverse stand-off voltage
Reverse breakdown voltage
Typ.
VRWM
VBR
Reverse leakage current
IR
Clamping voltage (tp=8/20μs)
VC
Peak Pulse Current (tp=8/20μs)
IPP
Off state junction capacitance
CJ
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
Min.
IBR=1mA
VR=15V
each I/O pin
IPP=1A
0Vdc,f=1MHz
Between I/O
pins and GND
2/6
Max.
Unit
15
V
16.7
V
0.8
1
μA
30
V
8
A
pF
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UDT23AXXL02 SERIES
Electrical Characteristics (TJ=25℃)
UDT23A24L02 (Marking: B LXC)
Parameter
Symbol
Reverse stand-off voltage
Condition
Min.
Typ.
Max.
Unit
24
V
VRWM
Reverse breakdown voltage
VBR
IBR=1mA
26.7
V
Reverse leakage current
IR
VR=24V
each I/O pin
1
μA
Clamping voltage (tp=8/20μs)
VC
IPP=1A
48
V
Peak Pulse Current (tp=8/20μs)
IPP
6
A
Off state junction capacitance
CJ
0Vdc,f=1MHz
Between I/O
pins and GND
0.8
pF
Typical Characteristics Curves
Figure 1. Power Derating Curve
Figure 2. Pulse Waveforms
110
100
100
% of Peak Power Current
Peak Power Dissipation (%)
90
80
70
60
50
40
30
20
10
0
tr
Peak value Ipp
90
80
70
60
50
40
30
td=t|IPP/2
20
10
0
25
50
75
100
125
150
0
175
0
5
10
15
20
25
30
t-Time (μs)
TA-Ambient Temperature (℃)
Figure 3. Non-Repetitive Peak Pulse vs. Pulse Time
Figure 4. Forward Voltage vs. Forward Current
10000
6
5
Forward Voltage (V)
PPP - Peak Pulse Power (W)
Waveform
Parameters:
tr=8µs
td=20µs
1000
100
4
3
2
Waveform
Parameters:
tr=8µs
tb=20µs
1
10
0.1
0
1
10
100
1000
tP-Pulse Duration (µs)
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
10000
0
1
2
3
4
5
6
7
Peak Pulse Current (A)
3/6
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UDT23AXXL02 SERIES
Applications Information
HDMI
Tx0-
Rx0-
Tx0+
Rx0+
Tx1-
Rx1-
Tx1+
Rx1+
Tx2-
Rx2-
Tx2+
Rx2+
TC-
RC-
TC+
RC+
UDT23AXXL02
CEC
CEC
SCL
SCL
Vcc 5V
Vcc 5V
SDA
SDA
HPD
HPD
UDT26A05L05
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
4/6
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UDT23AXXL02 SERIES
Recommended Soldering Conditions
Reflow Soldering
Critical Zone
TL to TP
tP
TP
Ramp-up
TL
tL
Temperature
TS max
TS min
Ramp-down
tS
Preheat
25
t 25℃ to Peak
Time
Recommended Conditions
Profile Feature
Pb-Free Assembly
Average ramp-up rate (TL to TP)
3℃/second max.
Preheat
-Temperature Min (TS min)
-Temperature Max (TS max)
-Time (min to max) (ts)
150℃
200℃
60-180 seconds
TS max to TL
-Ramp-up Rate
3℃/second max.
Time maintained above:
-Temperature (TL)
-Time (tL)
217℃
60-150 seconds
Peak Temperature (TP)
260℃
Time within 5℃ of actual Peak Temperature (tP)
Ramp-down Rate
6℃/second max.
Time 25℃ to Peak Temperature
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
20-40 seconds
8 minutes max.
5/6
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UDT23AXXL02 SERIES
Dimensions (SOT-23)
E
F
Dimension
A
G
2
Symbol
1
B
C
H I
3
J
D
0.8
(3X)
0.9
(3X)
1.9
0.95
1.8
Recommended Soldering Pad Layout
Millimeters
Inches
Min.
Max.
Min.
Max.
A
0.08
0.18
0.003
0.007
B
0.15
-
0.006
-
C
-
0.13
-
0.005
D
0.89
1.09
0.035
0.043
E
2.80
3.05
0.110
0.120
F
1.90
0.075
G
0.95
0.037
H
1.19
1.40
0.047
0.055
I
2.10
2.49
0.083
0.098
J
0.35
0.50
0.014
0.020
Packaging
Tape
P0
P1
P2
K
F
B
W
E
øD0
B0
A0
øD1
t
A
Reel
D2
D
Revision:ESD-UDT23AXXL02 SERIES-001(A2)
W1
Symbol
Dimension (mm)
W
8.00±0.30
P0
4.00±0.10
P1
4.00±0.10
P2
2.00±0.10
D0
Φ1.55±0.10
D1
Φ1.00±0.05
E
1.75±0.10
F
3.50±0.10
A
3.10±0.10
A0
2.10±0.10
B
2.75±0.10
B0
0.65±0.10
K
1.10±0.10
t
0.20±0.05
D
Φ178.0±2.0
D2
Φ13.0
W1
9.5
Quantity: 3000PCS
6/6
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