MMBZ6V8A

MMBZ Series Dual Common Anode Zener TVS 3 Features Allows Either Two Separate Unidirectional Configuations or a Single Bidirectional Configuations. Low Leakage Current. 24-40 Watts Peak Power Protection. Excellent Clamping Capability. ESD Rating of Class N(exceeding 16KV)per the Human Body Model. Transient Voltage Suppressors Encapsulated in a SOT-23 Package. 2 1 ■ Simplified outline(SOT-23) 3 MI JS 1 2 O CR Mechanical Data Characteristics nd co Absolute Maximum Ratings Ta = 25 mi Se Case: Molded Epoxy Marking: Marking Code Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec. Weight: 0.008grams(approx.) Symbol Total Power Dissipation on Alumina Substrate (3)@ TA =25 C Derate above 25 C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Lead Solder Temperature-Maximum(10 Second Duration) PD R θJA PD R θJA TJ ,TSTG TL W 24 40 225 1.8 556 300 2.4 417 mW mW/ C C/W mW mW/ C C/W -55 to +150 C 260 C r to Total Power Dissipation on FR-5 Board (2) @ TA =25 C Derate above 25 C Thermal Resistance Junction-to-Ambient P PK uc _ 25 C (1) Peak Power Dissipation @ 1.0 ms @ TL < MMBZ5V6A thru MMBZ10VA MMBZ12VA thru MMBZ33VA Value _ _ _ _ NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above TA =25 C per FIG 6. 2. FR-5=1.0 _ 0.75 _ 0.62 in. 3. Alumina=0.4 _ 0.3 _ 0.024m, 99.5% alumina www.jsmsemi.com 第１／５页 MMBZ Series Dual Common Anode Zener TVS ELECTRICALCHARACTERISTICS (TA = 25 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (V F = 0.9 V Max @ IF = 10 mA) 24 WATTS MMBZ5V6A MMBZ6V2A MMBZ6V8A MMB Z10V A mA IPP Ω Ω mA V A θVBR mV/ C 20 11 1600 0.25 8.0 3.0 1.26 1.0 - - - 8.7 2.76 2.80 1.0 - - - 9.6 2.5 3.4 9.56 1.0 - - - 14 1.7 7.5 10.5 1.0 - - - 14.2 1.7 7.5 Volts uA Min Nom Max 5A6 3.0 5.0 5.32 5.6 5.88 6A2 3.0 0.5 5.89 6.2 6.51 6A8 4.5 0.5 6.46 6.8 7.14 9A1 6.0 0.3 8.65 9.1 10A 6.5 0.3 9.50 10 mi Se (V F = 0.9 V Max @ IF = 10 mA) ZZT @ I ZT VC VRWM O CR MMBZ9V1A @ IT (6) ZZK @ I ZK VBR (4) (V) Device Marking MI JS Device IR @ VRWM VC @ I P P Max Zener Impedance (5) Breakdown Voltage @ IT Min Max mA V A 12.60 1.0 17 2.35 7.5 15.75 1.0 21 1.9 12.3 18.90 1.0 25 1.6 15.3 21.00 1.0 28 1.4 17.2 40 1.0 24.3 46 0.87 30.4 40 WATTS VRWM IR @ VRWM Volts nA VC @ I PP(6) Breakdown Voltage VBR (4) (V) MMBZ12VA 12A 8.5 200 11.40 12 MMBZ15VA 15A 12 50 14.25 15 MMBZ18VA 18A 14.5 50 17.10 18 MMBZ20VA 20A 17 50 19.00 20 MMBZ27VA 27A 22 50 25.65 27 28.35 1.0 MMBZ33VA 33A 26 50 31.35 33 34.65 1.0 Nom VC IPP θVBR mV/ C r to uc nd co Device Device Marking 4. V B R measured at pulse test current I T at an ambient temperature of 25 C . 5. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. T he specified limits are for I Z(AC ) = 0.1 I Z(DC ) , with the AC frequency = 1.0 kHz. 6. S urge current waveform per F ig 5 and derate per F ig 6 www.jsmsemi.com 第２／５页 MMBZ Series Dual Common Anode Zener TVS Electrical Characteristics (TA =25 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Symbol I PP Parameter I Maximum Reverse Peak Pulse Current Clamping Voltage @ I PP VC VRWM IF MI JS Working Peak Reverse Votlage Maximum Reverse Leakage Current @ VRWM IR θ VBR VC VBR VR WM Breakdown Voltage @ I T IT Test Current Maximum Temperature Coef ficient of VBR O CR VBR IF Forward Current VF Forward Voltage @ I F ZZT Maximum Zener Impedance @ I ZT I ZK Reverse Current ZZK Maximum Zener Impedance @ I ZK IP P Uni-Directional TVS nd co mi Se 1000 18 100 I R (nA) 12 9 10 1 6 0.1 3 0 -40 0 +50 +100 +150 0.01 -40 TEMPERATURE( C) r to VBR @ IT 15 uc BREAKDOWN VOLTAGE(V) V IR V F IT +25 +85 +125 TEMPERATURE( C) FIG.1 Typical Breakdown Voltage Versus Temperature FIG.2 Typical Leakage Current Versus Temperature (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) www.jsmsemi.com 第３／５页 MMBZ Series Dual Common Anode Zener TVS 320 PD , POWER DISSIPATION(mW) 300 C, CPACITANCE( P F) 280 240 200 5.6 V 160 120 15 V 80 40 0 0 ALUMINA SUBSTRATE 200 150 100 FR-5 BOARD 50 0 3 2 MI JS 1 250 0 25 50 BIAS(V) FIG.3 Typical Capacitance Versus Bias Voltage O CR PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF I PP . PEAK VALUE - I PP HALF VALUE = I PP 2 50 tP 0 1 3 2 4 FIG.5 Pulse Waveform 60 50 40 30 20 10 0 0 25 UNIDIRECTIONAL 1 10 100 1000 100 125 150 175 200 R E C TANGULAR WAVEFORM, TA = 25 C BIDIRECTIONAL 10 UNIDIRECTIONAL 1 0.1 1 10 100 1000 PW, PULSE WIDTH(ms) PW, PULSE WIDTH(ms) FIG.7 Maximum Non-repetitive Surge Power, PPK Versus PW Power is defined as VRSM x IZ(pk)where VRSM is the clamping voltage at IZ (pk). 75 r to BIDIRECTIONAL PPK , PEAK SURGE POWER(W) 100 RECTANGULAR WAVEFORM, TA = 25 C 0.1 50 uc PPK , PEAK SURGE POWER(W) 70 FIG.6 Pulse Derating Curve 100 1 175 Ta , AMBIENT TEMPERATURE( C) t, TIME(ms) 10 150 80 nd co 0 125 100 90 mi Se VALUE(%) 100 100 FIG.4 Steady State Power Derating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ Ta =25 C (Upper curve for each voltage is bidirectional mode,) lower curve is undirectional mode) _10us tr < 75 TEMPERATURE( C) FIG.8 Maximum Non-repetitive Surge Power, PPK (NOM)Versus PW Power is defined as VZ (NOM) x I Z(pk)where VZ (NOM) is the nominal Zener voltage measured at the low test current used for voltage classification www.jsmsemi.com 第４／５页 MMBZ Series Dual Common Anode Zener TVS ■ SOT-23 D E B A X MI JS O CR HE v M A 3 2 e1 bp A A1 nd co mi Se 1 Q w M B e c Lp detail X 2 mm r to 1 uc 0 scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 www.jsmsemi.com 第５／５页